+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HER155G A0GDIODE GEN PURP 400V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,156 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
HER156G A0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,142 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
HER157G A0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,288 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
HER158G A0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
3,208 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1.5A | -55°C ~ 150°C | 1 V @ 1.5 A | |
|
|
HER201G A0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
3,347 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
HER202G A0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
2,733 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
HER204G A0GDIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation |
3,807 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | |
|
|
HER205G A0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,741 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
HER206G A0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,810 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
HER207G A0GDIODE GEN PURP 800V 2A DO204AC Taiwan Semiconductor Corporation |
3,721 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
HER301G A0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,411 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HER302G A0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,312 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HER303G A0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
2,225 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HER304G A0GDIODE GEN PURP 300V 3A DO201AD Taiwan Semiconductor Corporation |
2,462 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HER306G A0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
2,766 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HER307G A0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
2,391 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
HER601G A0GDIODE GEN PURP 50V 6A R-6 Taiwan Semiconductor Corporation |
2,526 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
HER602G A0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
2,486 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
HER603G A0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
2,498 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
HER604G A0GDIODE GEN PURP 300V 6A R-6 Taiwan Semiconductor Corporation |
3,089 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
