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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR4L40 A0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
3,697 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A | |
|
|
MUR4L40HA0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
2,689 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A |
|
|
MUR4L60 A0GDIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation |
3,821 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A | |
|
|
MUR4L60HA0GDIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation |
2,404 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A |
|
|
P2500M A0GDIODE GEN PURP 1000V 25A P2500 Taiwan Semiconductor Corporation |
3,288 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1000 V | - | 25A | -50°C ~ 175°C | 870 mV @ 5 A | |
|
|
P2500MHA0GDIODE GEN PURP 25A P2500 Taiwan Semiconductor Corporation |
2,829 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1000 V | - | 25A | -50°C ~ 175°C | 870 mV @ 5 A |
|
SF21G A0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
2,160 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SF21GHA0GDIODE GEN PURP 50V 2A DO204AC Taiwan Semiconductor Corporation |
3,575 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
SF22G A0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
2,491 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SF22GHA0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
3,159 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
SF23G A0GDIODE GEN PURP 150V 2A DO204AC Taiwan Semiconductor Corporation |
3,607 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SF23GHA0GDIODE GEN PURP 150V 2A DO204AC Taiwan Semiconductor Corporation |
2,091 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
SF24GHA0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
3,262 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
|
|
SF25G A0GDIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation |
3,162 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SF25GHA0GDIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation |
2,725 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
|
SF26GHA0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,307 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
|
SF27G A0GDIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation |
2,315 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
SF27GHA0GDIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation |
2,218 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
SF28GHA0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
3,306 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
SF2L4G A0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
2,852 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A |
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