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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
GP30B-E3/54 DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division	3,971	-	RFQ	Ficha técnica	Tape & Reel (TR)	SUPERECTIFIER®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	5 µs	5 µA @ 100 V	100 V	3A	-65°C ~ 175°C	1.2 V @ 3 A
S6B DIODE GEN PURP 100V 6A DO4 GeneSiC Semiconductor	3,228	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	100 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
CDBJSC8650-G DIODE, SIC STKY 8A 650V TO-220-2 Comchip Technology	2,228	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	560pF @ 0V, 1MHz	0 ns	100 µA @ 650 V	650 V	8A (DC)	-55°C ~ 175°C	1.7 V @ 8 A
D6025LCTP RECTIFIER 600V 25AMP TO-220L Littelfuse Inc.	3,455	-	RFQ		Tube	Dxx25L	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	10 µA @ 600 V	600 V	15.9A	-40°C ~ 125°C	1.6 V @ 15 A
BYV98-50-TAP DIODE AVALANCHE 50V 4A SOD64 Vishay General Semiconductor - Diodes Division	2,592	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	35 ns	10 µA @ 50 V	50 V	4A	-55°C ~ 175°C	1.1 V @ 5 A
1N5420E3/TR RECTIFIER UFR,FRR Microchip Technology	2,594	-	RFQ	Ficha técnica	Tape & Reel (TR)	Military, MIL-PRF-19500/411	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	400 ns	-	600 V	3A	-65°C ~ 175°C	1.5 V @ 9 A
GP30D-E3/54 DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division	3,194	-	RFQ	Ficha técnica	Tape & Reel (TR)	SUPERECTIFIER®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	5 µs	5 µA @ 200 V	200 V	3A	-65°C ~ 175°C	1.1 V @ 3 A
S6BR DIODE GEN PURP REV 100V 6A DO4 GeneSiC Semiconductor	2,190	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	100 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
RFS30TZ6SGC13 650V 30A, TO-247-2L, ULTRA SOFT Rohm Semiconductor	3,368	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	5 µA @ 650 V	650 V	30A	175°C	2.3 V @ 30 A
C6D08065Q-TR 8A 650V SIC SCHOTTKY QFN Wolfspeed, Inc.	2,269	-	RFQ		Tape & Reel (TR),Cut Tape (CT),-		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	518pF @ 0V, 1MHz	-	20 µA @ 650 V	650 V	28A (DC)	-55°C ~ 175°C	1.5 V @ 8 A
BYW172D-TAP DIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,242	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	1 µA @ 200 V	200 V	3A	-55°C ~ 175°C	1.5 V @ 9 A
1N5188/TR RECTIFIER UFR,FRR Microchip Technology	3,403	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	250 ns	2 µA @ 400 V	400 V	3A	-65°C ~ 175°C	1.5 V @ 9 A
1N5407GP-E3/54 DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division	3,289	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	5 µA @ 400 V	800 V	3A	-50°C ~ 150°C	1.2 V @ 3 A
S6D DIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor	2,238	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	200 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
RFL30TZ6SGC13 650V 30A, TO-247-2L, ULTRA SOFT Rohm Semiconductor	3,319	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	5 µA @ 650 V	650 V	30A	175°C	1.5 V @ 30 A
SS22T3G DIODE SCHOTTKY 20V 2A SMB onsemi	68,155	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT),Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 40 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
GS2MAFC_R1_00001 SMAF-C, GENERAL Panjit International Inc.	2,963	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	18pF @ 4V, 1MHz	-	1 µA @ 1000 V	1000 V	2A	-55°C ~ 150°C	1.1 V @ 2 A
BYS12-90-E3/TR DIODE SCHOTTKY 90V 1.5A DO214AC Vishay General Semiconductor - Diodes Division	2,599	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	1.5A	-55°C ~ 150°C	750 mV @ 1 A
MBR120AFC_R1_00001 SMAF-C, SKY Panjit International Inc.	2,823	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	30pF @ 4V, 1MHz	-	50 µA @ 120 V	120 V	1A	-55°C ~ 150°C	900 mV @ 1 A
MBRS130T3G DIODE SCHOTTKY 30V 1A SMB onsemi	3,739	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT),Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	1 mA @ 30 V	30 V	1A	-65°C ~ 125°C	600 mV @ 1 A