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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N5621US DIODE GEN PURP 800V 1A D5A Microchip Technology	3,559	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	20pF @ 12V, 1MHz	300 ns	500 nA @ 800 V	800 V	1A	-65°C ~ 175°C	1.6 V @ 3 A
SRAS8100 MNG DIODE SCHOTTKY 100V 8A TO263AB Taiwan Semiconductor Corporation	3,287	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 100 V	100 V	8A	-55°C ~ 150°C	950 mV @ 8 A
S6GR DIODE GEN PURP REV 400V 6A DO4 GeneSiC Semiconductor	3,761	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	400 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
FFSM0865A DIODE SBD 650V 8A 4PQFN onsemi	2,943	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	463pF @ 1V, 100kHz	0 ns	200 µA @ 650 V	650 V	9.6A (DC)	-55°C ~ 175°C	1.75 V @ 8 A
VS-20ETF04STRL-M3 DIODE GEN PURP 400V 20A TO263AB Vishay General Semiconductor - Diodes Division	3,431	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	160 ns	100 µA @ 400 V	400 V	20A	-40°C ~ 150°C	1.3 V @ 20 A
SF5402-TAP DIODE GEN PURP 200V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,326	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
CD1A60 DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	3,340	-	RFQ	Ficha técnica	Tape & Reel (TR)	Military, MIL-PRF-19500/586	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 60 V	60 V	1A	-55°C ~ 125°C	750 mV @ 1 A
NRVB1045MFST3G DIODE SCHOTTKY 45V 10A 5DFN onsemi	3,718	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 45 V	45 V	10A	-55°C ~ 175°C	750 mV @ 20 A
S6J DIODE GEN PURP 600V 6A DO4 GeneSiC Semiconductor	2,572	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	600 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
JANTXV1N4454-1 ZENER DIODE Microchip Technology	3,708	-	RFQ		Bulk	Military, MIL-PRF-19500/144	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 ns	100 µA @ 50 V	50 V	200mA	-65°C ~ 175°C	1 V @ 10 mA
FFSP0665B SIC DIODE TO220 650V onsemi	2,820	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	259pF @ 1V, 100kHz	0 ns	40 µA @ 650 V	650 V	8A (DC)	-55°C ~ 175°C	1.7 V @ 6 A
SF5402-TR DIODE GEN PURP 200V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,980	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 175°C	1.1 V @ 3 A
1N6858-1/TR DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	2,437	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/444	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Through Hole	4.5pF @ 0V, 1MHz	-	200 nA @ 50 V	70 V	75mA	-65°C ~ 150°C	650 mV @ 15 mA
NRVB1045MFST1G DIODE SCHOTTKY 45V 10A 5DFN onsemi	3,244	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 45 V	45 V	10A	-55°C ~ 175°C	750 mV @ 20 A
S6JR DIODE GEN PURP REV 600V 6A DO4 GeneSiC Semiconductor	2,910	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	600 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
DPG60IM400QB DIODE GEN PURP 400V 60A TO3P IXYS	2,817	-	RFQ	Ficha técnica	Tube	HiPerFRED²™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	1 µA @ 400 V	400 V	60A	-55°C ~ 175°C	1.47 V @ 60 A
STTH5R06D DIODE GEN PURP 600V 5A TO220AC STMicroelectronics	2,563	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	20 µA @ 600 V	600 V	5A	175°C (Max)	2.9 V @ 5 A
VS-10TQ035-M3 DIODE SCHOTTKY 35V 10A TO-220AC Vishay General Semiconductor - Diodes Division	3,358	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	900pF @ 5V, 1MHz	-	2 mA @ 35 V	35 V	10A	-55°C ~ 175°C	670 mV @ 20 A
1N6620E3/TR RECTIFIER UFR,FRR Microchip Technology	2,337	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/585	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	30 ns	500 nA @ 200 V	200 V	1.2A	-65°C ~ 150°C	1.4 V @ 1.2 A
SS2P6-M3/84A DIODE SCHOTTKY 60V 2A DO220AA Vishay General Semiconductor - Diodes Division	3,971	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	80pF @ 4V, 1MHz	-	100 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A