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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SB60-05J RECTIFIER DIODE, SCHOTTKY, 1 PHA Rochester Electronics, LLC	2,503	-	RFQ	Ficha técnica	Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
STPS2L40AFN 40 V, 2 A LOW DROP POWER SCHOTTK STMicroelectronics	2,357	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	220 µA @ 40 V	40 V	2A	150°C	430 mV @ 2 A
BR215_R1_00001 SMA, SKY Panjit International Inc.	1,603	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	50 µA @ 150 V	150 V	2A	-55°C ~ 175°C	900 mV @ 2 A
1N5401-G DIODE GEN PURP 100V 3A DO201AD Comchip Technology	2,741	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 100 V	100 V	3A	-65°C ~ 125°C	950 mV @ 3 A
SS2040FL_R1_00001 SOD-123FL, SKY Panjit International Inc.	16,266	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 40 V	40 V	2A	-50°C ~ 150°C	500 mV @ 2 A
1N5404-G DIODE GEN PURP 400V 3A DO201AD Comchip Technology	2,637	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 400 V	400 V	3A	-65°C ~ 125°C	950 mV @ 3 A
S1J-Q-CT CUT-TAPE VERSION. STANDARD RECO DComponents	487,500	-	RFQ	Ficha técnica	Strip		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 600 V	600 V	1A	-50°C ~ 150°C	1.1 V @ 1 A
US1J-E3/61T DIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division	2,960	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
S1M-Q-CT CUT-TAPE VERSION. STANDARD RECO DComponents	135,000	-	RFQ	Ficha técnica	Strip		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 1000 V	1000 V	1A	-50°C ~ 150°C	1.1 V @ 1 A
US1K-E3/61T DIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division	1,714	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	75 ns	10 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
V20120SG-M3/4W DIODE SCHOTTKY 20A 120V TO-220AB Vishay General Semiconductor - Diodes Division	3,610	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	250 µA @ 120 V	120 V	20A	-40°C ~ 150°C	1.33 V @ 20 A
S6K DIODE GEN PURP 800V 6A DO4 GeneSiC Semiconductor	3,038	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	800 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
FFSP1265A DIODE SCHOTTKY 650V 15A TO220-2L Rochester Electronics, LLC	2,319	-	RFQ	Ficha técnica	Bulk,Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	665pF @ 1V, 100kHz	0 ns	200 µA @ 650 V	650 V	15A (DC)	-55°C ~ 175°C	1.75 V @ 12 A
VS-10TQ040-M3 DIODE SCHOTTKY 40V 10A TO-220AC Vishay General Semiconductor - Diodes Division	2,363	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	900pF @ 5V, 1MHz	-	2 mA @ 40 V	40 V	10A	-55°C ~ 175°C	670 mV @ 20 A
APT15D60BG DIODE GEN PURP 600V 15A TO247 Microchip Technology	2,699	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	80 ns	150 µA @ 600 V	600 V	15A	-55°C ~ 175°C	1.8 V @ 15 A
JANTX1N5415 DIODE GEN PURP 50V 3A AXIAL Microchip Technology	2,407	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/411	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	150 ns	1 µA @ 50 V	50 V	3A	-65°C ~ 175°C	1.5 V @ 9 A
VB10150S-E3/8W DIODE SCHOTTKY 150V 10A TO263AB Vishay General Semiconductor - Diodes Division	3,939	-	RFQ	Ficha técnica	Tape & Reel (TR)	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	150 µA @ 150 V	150 V	10A	-55°C ~ 150°C	1.2 V @ 10 A
S6KR DIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor	2,471	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 100 V	800 V	6A	-65°C ~ 175°C	1.1 V @ 6 A
FFSB1265A DIODE SBD 12A 650V D2PAK-3 onsemi	2,541	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	665pF @ 1V, 100kHz	0 ns	200 µA @ 650 V	650 V	14A (DC)	-65°C ~ 175°C	1.75 V @ 12 A
FCF06A40 DIODE FAST RECOVERY 400V 6A TO-2 KYOCERA AVX	3,290	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	30 ns	20 µA @ 400 V	400 V	6A	-40°C ~ 150°C	1.25 V @ 3 A