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Diodos - Zener - Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Tolerance | Part Status | Power - Max | Mounting Type | Package / Case | Impedance (Max) (Zzt) | Operating Temperature | Supplier Device Package | Voltage - Zener (Nom) (Vz) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4764AHA0GDIODE ZENER 100V 1W DO204AL Taiwan Semiconductor Corporation |
2,196 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | ±5% | Active | 1 W | Through Hole | 350 Ohms | -55°C ~ 150°C (TJ) | 100 V | 5 µA @ 76 V | - | ||
|
1N5221B A0GDIODE ZENER 2.4V 500MW DO35 Taiwan Semiconductor Corporation |
3,429 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 30 Ohms | 100°C (TJ) | 2.4 V | 100 µA @ 1 V | 1.1 V @ 200 mA | |||
|
|
1N5222B A0GDIODE ZENER 2.5V 500MW DO35 Taiwan Semiconductor Corporation |
3,393 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 30 Ohms | 100°C (TJ) | 2.5 V | 100 µA @ 1 V | 1.1 V @ 200 mA | |||
|
|
1N5223B A0GDIODE ZENER 2.7V 500MW DO35 Taiwan Semiconductor Corporation |
3,595 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 30 Ohms | 100°C (TJ) | 2.7 V | 75 µA @ 1 V | 1.1 V @ 200 mA | |||
|
|
1N5224B A0GDIODE ZENER 2.8V 500MW DO35 Taiwan Semiconductor Corporation |
3,780 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 30 Ohms | 100°C (TJ) | 2.8 V | 75 µA @ 1 V | 1.1 V @ 200 mA | |||
|
|
1N5225B A0GDIODE ZENER 3V 500MW DO35 Taiwan Semiconductor Corporation |
3,456 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 29 Ohms | 100°C (TJ) | 3 V | 50 µA @ 1 V | 1.1 V @ 200 mA | |||
|
|
1N5226B A0GDIODE ZENER 3.3V 500MW DO35 Taiwan Semiconductor Corporation |
3,650 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 28 Ohms | 100°C (TJ) | 3.3 V | 25 µA @ 1 V | 1.1 V @ 200 mA | |||
|
|
1N5227B A0GDIODE ZENER 3.6V 500MW DO35 Taiwan Semiconductor Corporation |
2,238 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 24 Ohms | 100°C (TJ) | 3.6 V | 15 µA @ 1 V | 1.1 V @ 200 mA | |||
|
|
1N5228B A0GDIODE ZENER 3.9V 500MW DO35 Taiwan Semiconductor Corporation |
3,666 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 23 Ohms | 100°C (TJ) | 3.9 V | 10 µA @ 1 V | 1.1 V @ 200 mA | |||
|
|
1N5230B A0GDIODE ZENER 4.7V 500MW DO35 Taiwan Semiconductor Corporation |
3,516 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 19 Ohms | 100°C (TJ) | 4.7 V | 5 µA @ 2 V | 1.1 V @ 200 mA | |||
|
|
1N5231B A0GDIODE ZENER 5.1V 500MW DO35 Taiwan Semiconductor Corporation |
3,818 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 17 Ohms | 100°C (TJ) | 5.1 V | 5 µA @ 2 V | 1.1 V @ 200 mA | |||
|
|
1N5232B A0GDIODE ZENER 5.6V 500MW DO35 Taiwan Semiconductor Corporation |
2,893 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 11 Ohms | 100°C (TJ) | 5.6 V | 5 µA @ 3 V | 1.1 V @ 200 mA | |||
|
|
1N5233B A0GDIODE ZENER 6V 500MW DO35 Taiwan Semiconductor Corporation |
2,613 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 7 Ohms | 100°C (TJ) | 6 V | 5 µA @ 3.5 V | 1.1 V @ 200 mA | |||
|
|
1N5234B A0GDIODE ZENER 6.2V 500MW DO35 Taiwan Semiconductor Corporation |
3,609 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 7 Ohms | 100°C (TJ) | 6.2 V | 5 µA @ 4 V | 1.1 V @ 200 mA | |||
|
|
1N5235B A0GDIODE ZENER 6.8V 500MW DO35 Taiwan Semiconductor Corporation |
3,054 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 5 Ohms | 100°C (TJ) | 6.8 V | 3 µA @ 5 V | 1.1 V @ 200 mA | |||
|
|
1N5236B A0GDIODE ZENER 7.5V 500MW DO35 Taiwan Semiconductor Corporation |
3,546 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 6 Ohms | 100°C (TJ) | 7.5 V | 3 µA @ 6 V | 1.1 V @ 200 mA | |||
|
|
1N5237B A0GDIODE ZENER 8.2V 500MW DO35 Taiwan Semiconductor Corporation |
3,884 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 8 Ohms | 100°C (TJ) | 8.2 V | 3 µA @ 6.5 V | 1.1 V @ 200 mA | |||
|
|
1N5238B A0GDIODE ZENER 8.7V 500MW DO35 Taiwan Semiconductor Corporation |
3,879 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 8 Ohms | 100°C (TJ) | 8.7 V | 3 µA @ 6.5 V | 1.1 V @ 200 mA | |||
|
|
1N5239B A0GDIODE ZENER 9.1V 500MW DO35 Taiwan Semiconductor Corporation |
2,748 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 10 Ohms | 100°C (TJ) | 9.1 V | 3 µA @ 7 V | 1.1 V @ 200 mA | |||
|
|
1N5240B A0GDIODE ZENER 10V 500MW DO35 Taiwan Semiconductor Corporation |
3,293 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 17 Ohms | 100°C (TJ) | 10 V | 2 µA @ 8 V | 1.1 V @ 200 mA |
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