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Diodos - Zener - Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Tolerance | Part Status | Power - Max | Mounting Type | Package / Case | Impedance (Max) (Zzt) | Operating Temperature | Supplier Device Package | Voltage - Zener (Nom) (Vz) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5241B A0GDIODE ZENER 11V 500MW DO35 Taiwan Semiconductor Corporation |
3,834 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 22 Ohms | 100°C (TJ) | 11 V | 1 µA @ 8.4 V | 1.1 V @ 200 mA | |||
|
|
1N5243B A0GDIODE ZENER 13V 500MW DO35 Taiwan Semiconductor Corporation |
3,218 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 13 Ohms | 100°C (TJ) | 13 V | 100 nA @ 10 V | 1.1 V @ 200 mA | |||
|
|
1N5244B A0GDIODE ZENER 14V 500MW DO35 Taiwan Semiconductor Corporation |
2,632 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 15 Ohms | 100°C (TJ) | 14 V | 100 nA @ 10 V | 1.1 V @ 200 mA | |||
|
|
1N5247B A0GDIODE ZENER 17V 500MW DO35 Taiwan Semiconductor Corporation |
3,040 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 19 Ohms | 100°C (TJ) | 17 V | 100 nA @ 13 V | 1.1 V @ 200 mA | |||
|
|
1N5248B A0GDIODE ZENER 18V 500MW DO35 Taiwan Semiconductor Corporation |
2,073 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 21 Ohms | 100°C (TJ) | 18 V | 100 nA @ 14 V | 1.1 V @ 200 mA | |||
|
|
1N5249B A0GDIODE ZENER 19V 500MW DO35 Taiwan Semiconductor Corporation |
2,026 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 23 Ohms | 100°C (TJ) | 19 V | 100 nA @ 14 V | 1.1 V @ 200 mA | |||
|
|
1N5250B A0GDIODE ZENER 20V 500MW DO35 Taiwan Semiconductor Corporation |
3,829 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 25 Ohms | 100°C (TJ) | 20 V | 100 nA @ 15 V | 1.1 V @ 200 mA | |||
|
|
1N5251B A0GDIODE ZENER 22V 500MW DO35 Taiwan Semiconductor Corporation |
2,527 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 29 Ohms | 100°C (TJ) | 22 V | 100 nA @ 17 V | 1.1 V @ 200 mA | |||
|
|
1N5253B A0GDIODE ZENER 25V 500MW DO35 Taiwan Semiconductor Corporation |
3,548 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 35 Ohms | 100°C (TJ) | 25 V | 100 nA @ 18 V | 1.1 V @ 200 mA | |||
|
|
1N5254B A0GDIODE ZENER 27V 500MW DO35 Taiwan Semiconductor Corporation |
2,673 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 41 Ohms | 100°C (TJ) | 27 V | 100 nA @ 21 V | 1.1 V @ 200 mA | |||
|
|
1N5255B A0GDIODE ZENER 28V 500MW DO35 Taiwan Semiconductor Corporation |
2,853 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 44 Ohms | 100°C (TJ) | 28 V | 100 nA @ 21 V | 1.1 V @ 200 mA | |||
|
|
1N5256B A0GDIODE ZENER 30V 500MW DO35 Taiwan Semiconductor Corporation |
2,296 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 49 Ohms | 100°C (TJ) | 30 V | 100 nA @ 23 V | 1.1 V @ 200 mA | |||
|
|
1N5257B A0GDIODE ZENER 33V 500MW DO35 Taiwan Semiconductor Corporation |
2,354 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 58 Ohms | 100°C (TJ) | 33 V | 100 nA @ 25 V | 1.1 V @ 200 mA | |||
|
|
1N5258B A0GDIODE ZENER 36V 500MW DO35 Taiwan Semiconductor Corporation |
2,065 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 70 Ohms | 100°C (TJ) | 36 V | 100 nA @ 27 V | 1.1 V @ 200 mA | |||
|
|
1N5259B A0GDIODE ZENER 39V 500MW DO35 Taiwan Semiconductor Corporation |
2,046 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 80 Ohms | 100°C (TJ) | 39 V | 100 nA @ 30 V | 1.1 V @ 200 mA | |||
|
|
1N5260B A0GDIODE ZENER 43V 500MW DO35 Taiwan Semiconductor Corporation |
2,293 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 93 Ohms | 100°C (TJ) | 43 V | 100 nA @ 33 V | 1.1 V @ 200 mA | |||
|
|
1N5261B A0GDIODE ZENER 47V 500MW DO35 Taiwan Semiconductor Corporation |
3,160 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 105 Ohms | 100°C (TJ) | 47 V | 100 nA @ 36 V | 1.1 V @ 200 mA | |||
|
|
1N5262B A0GDIODE ZENER 51V 500MW DO35 Taiwan Semiconductor Corporation |
3,392 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | ±5% | Active | 500 mW | Through Hole | 125 Ohms | 100°C (TJ) | 51 V | 100 nA @ 39 V | 1.1 V @ 200 mA | |||
|
BZD27C51PHR3GDIODE ZENER 51V 1W SUB SMA Taiwan Semiconductor Corporation |
3,464 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | ±5.88% | Active | 1 W | Surface Mount | 60 Ohms | -55°C ~ 175°C (TJ) | 51 V | 1 µA @ 39 V | 1.2 V @ 200 mA | ||
|
1PGSMA150ZHR3GDIODE ZENER 150V 1.25W DO214AC Taiwan Semiconductor Corporation |
3,545 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | ±5% | Discontinued at Digi-Key | 1.25 W | Surface Mount | 1 kOhms | -55°C ~ 175°C (TJ) | 150 V | 1 µA @ 114 V | 1.2 V @ 200 mA |
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