Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT29E512G08CUCDBJ6-6:D TR

MT29E512G08CUCDBJ6-6:D TR

IC FLASH 512GBIT PAR 132LBGA

Micron Technology Inc.
2,703 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 512Gb (64G x 8) Parallel 167 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CUCDBJ6-6R:D TR

MT29F512G08CUCDBJ6-6R:D TR

IC FLASH 512GBIT PAR 132LBGA

Micron Technology Inc.
2,083 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 166 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F1T08CUECBH8-12:C TR

MT29F1T08CUECBH8-12:C TR

IC FLASH 1TB PARALLEL 152LBGA

Micron Technology Inc.
2,304 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 1Tb (128G x 8) Parallel 83 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CUCABH3-10RZ:A TR

MT29F512G08CUCABH3-10RZ:A TR

IC FLASH 512GBIT PAR 100LBGA

Micron Technology Inc.
3,271 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F1T08CUCABK8-6:A TR

MT29F1T08CUCABK8-6:A TR

IC FLASH 1TB PARALLEL 167MHZ

Micron Technology Inc.
3,445 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 1Tb (128G x 8) Parallel 167 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) -
MT29F128G08AMCABJ2-10Z:A TR

MT29F128G08AMCABJ2-10Z:A TR

IC FLASH 128GBIT PAR 132TBGA

Micron Technology Inc.
3,413 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F128G08AMCABK3-10:A TR

MT29F128G08AMCABK3-10:A TR

IC FLASH 128GBIT PARALLEL 100MHZ

Micron Technology Inc.
2,728 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) -
MT29F128G08AMCABH2-10IT:A TR

MT29F128G08AMCABH2-10IT:A TR

IC FLASH 128GBIT PAR 100TBGA

Micron Technology Inc.
3,400 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F128G08AJAAAWP-IT:A TR

MT29F128G08AJAAAWP-IT:A TR

IC FLASH 128GBIT PAR 48TSOP I

Micron Technology Inc.
2,819 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel - - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F128G08AUCBBH3-12:B TR

MT29F128G08AUCBBH3-12:B TR

IC FLASH 128GBIT PAR 100LBGA

Micron Technology Inc.
3,893 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel 83 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F128G08AUCBBH3-12IT:B TR

MT29F128G08AUCBBH3-12IT:B TR

IC FLASH 128GBIT PAR 100LBGA

Micron Technology Inc.
3,008 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel 83 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F256G08AUCABK4-10:A TR

MT29F256G08AUCABK4-10:A TR

IC FLASH 256GBIT PARALLEL 100MHZ

Micron Technology Inc.
3,362 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (SLC) 256Gb (32G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) -
MT29F256G08AUCABH3-10ITZ:A TR

MT29F256G08AUCABH3-10ITZ:A TR

IC FLASH 256GBIT PAR 100LBGA

Micron Technology Inc.
3,784 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (SLC) 256Gb (32G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29F256G08AUCABH3-10IT:A TR

MT29F256G08AUCABH3-10IT:A TR

IC FLASH 256GBIT PAR 100LBGA

Micron Technology Inc.
2,835 -

RFQ

Tape & Reel (TR) - Obsolete Non-Volatile FLASH FLASH - NAND (SLC) 256Gb (32G x 8) Parallel 100 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT41J256M16HA-093 J:E

MT41J256M16HA-093 J:E

IC DRAM 4GBIT PARALLEL 96FBGA

Micron Technology Inc.
2,821 -

RFQ

MT41J256M16HA-093 J:E

Ficha técnica

Tray - Obsolete Volatile DRAM SDRAM - DDR3 4Gb (256M x 16) Parallel 1.066 GHz - 20 ns 1.425V ~ 1.575V 0°C ~ 95°C (TC) Surface Mount
MT49H16M18BM-5:B

MT49H16M18BM-5:B

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
2,721 -

RFQ

MT49H16M18BM-5:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 288Mb (16M x 18) Parallel 200 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H16M18BM-5:B TR

MT49H16M18BM-5:B TR

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,508 -

RFQ

MT49H16M18BM-5:B TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen Volatile DRAM DRAM 288Mb (16M x 18) Parallel 200 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H16M18CBM-25 IT:B

MT49H16M18CBM-25 IT:B

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,379 -

RFQ

MT49H16M18CBM-25 IT:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 288Mb (16M x 18) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
MT49H16M18CFM-25:B

MT49H16M18CFM-25:B

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
2,369 -

RFQ

MT49H16M18CFM-25:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 288Mb (16M x 18) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H16M18CFM-25:B TR

MT49H16M18CFM-25:B TR

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,710 -

RFQ

MT49H16M18CFM-25:B TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen Volatile DRAM DRAM 288Mb (16M x 18) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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