Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT49H32M9FM-33:B

MT49H32M9FM-33:B

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,740 -

RFQ

MT49H32M9FM-33:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 288Mb (32M x 9) Parallel 300 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H64M9FM-25:B

MT49H64M9FM-25:B

IC DRAM 576MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,789 -

RFQ

MT49H64M9FM-25:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 576Mb (64M x 9) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H64M9FM-25:B TR

MT49H64M9FM-25:B TR

IC DRAM 576MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,723 -

RFQ

MT49H64M9FM-25:B TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen Volatile DRAM DRAM 576Mb (64M x 9) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H64M9FM-25E:B

MT49H64M9FM-25E:B

IC DRAM 576MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,249 -

RFQ

MT49H64M9FM-25E:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 576Mb (64M x 9) Parallel 400 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H64M9FM-25E:B TR

MT49H64M9FM-25E:B TR

IC DRAM 576MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,077 -

RFQ

MT49H64M9FM-25E:B TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen Volatile DRAM DRAM 576Mb (64M x 9) Parallel 400 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36BM-5:B

MT49H8M36BM-5:B

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,638 -

RFQ

MT49H8M36BM-5:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 288Mb (8M x 36) Parallel 200 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36BM-TI:B

MT49H8M36BM-TI:B

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
2,960 -

RFQ

MT49H8M36BM-TI:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 288Mb (8M x 36) Parallel - - - 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36BM-TI:B TR

MT49H8M36BM-TI:B TR

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,883 -

RFQ

MT49H8M36BM-TI:B TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen Volatile DRAM DRAM 288Mb (8M x 36) Parallel - - - 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36FM-25 IT:B

MT49H8M36FM-25 IT:B

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
2,537 -

RFQ

MT49H8M36FM-25 IT:B

Ficha técnica

Tray - Discontinued at Mosen Volatile DRAM DRAM 288Mb (8M x 36) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
MT49H8M36FM-25 IT:B TR

MT49H8M36FM-25 IT:B TR

IC DRAM 288MBIT PARALLEL 144UBGA

Micron Technology Inc.
3,035 -

RFQ

MT49H8M36FM-25 IT:B TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen Volatile DRAM DRAM 288Mb (8M x 36) Parallel 400 MHz - 20 ns 1.7V ~ 1.9V -40°C ~ 85°C (TA) Surface Mount
MT49H8M36SJ-5:B

MT49H8M36SJ-5:B

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,566 -

RFQ

MT49H8M36SJ-5:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 288Mb (8M x 36) Parallel 200 MHz - 20 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36SJ-TI:B

MT49H8M36SJ-TI:B

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,723 -

RFQ

MT49H8M36SJ-TI:B

Ficha técnica

Tray - Obsolete Volatile DRAM DRAM 288Mb (8M x 36) Parallel - - - 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H8M36SJ-TI:B TR

MT49H8M36SJ-TI:B TR

IC DRAM 288MBIT PARALLEL 144FBGA

Micron Technology Inc.
2,920 -

RFQ

MT49H8M36SJ-TI:B TR

Ficha técnica

Tape & Reel (TR) - Obsolete Volatile DRAM DRAM 288Mb (8M x 36) Parallel - - - 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT29E1HT08ELHBBG1-3:B

MT29E1HT08ELHBBG1-3:B

IC FLASH 1.5T PARALLEL 272VBGA

Micron Technology Inc.
2,814 -

RFQ

Bulk - Active Non-Volatile FLASH FLASH - NAND 1.5Tb (192G x 8) Parallel - - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29E256G08CBHBBJ4-3ES:B

MT29E256G08CBHBBJ4-3ES:B

IC FLASH 256GBIT PAR 132VBGA

Micron Technology Inc.
3,679 -

RFQ

Tray - Obsolete Non-Volatile FLASH FLASH - NAND 256Gb (32G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29E3T08EQHBBG2-3:B

MT29E3T08EQHBBG2-3:B

IC FLASH 3TB PARALLEL 333MHZ

Micron Technology Inc.
3,955 -

RFQ

Tray - Active Non-Volatile FLASH FLASH - NAND 3Tb (384G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29E3T08EQHBBG2-3ES:B

MT29E3T08EQHBBG2-3ES:B

IC FLASH 3TB PARALLEL 333MHZ

Micron Technology Inc.
2,738 -

RFQ

Tray - Obsolete Non-Volatile FLASH FLASH - NAND 3Tb (384G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29E4T08EYHBBG9-3:B

MT29E4T08EYHBBG9-3:B

IC FLASH 4TB PARALLEL 333MHZ

Micron Technology Inc.
3,826 -

RFQ

Tray - Active Non-Volatile FLASH FLASH - NAND 4Tb (512G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29E4T08EYHBBG9-3ES:B

MT29E4T08EYHBBG9-3ES:B

IC FLASH 4TB PARALLEL 333MHZ

Micron Technology Inc.
2,916 -

RFQ

Tray - Obsolete Non-Volatile FLASH FLASH - NAND 4Tb (512G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) -
MT29F128G08CECGBJ4-5M:G

MT29F128G08CECGBJ4-5M:G

IC FLSH 128GBIT PARALLEL 132VBGA

Micron Technology Inc.
3,103 -

RFQ

Tray - Active Non-Volatile FLASH FLASH - NAND 128Gb (16G x 8) Parallel - - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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