Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT35XU02GCBA2G12-0AAT TR

MT35XU02GCBA2G12-0AAT TR

IC FLSH 2GBIT XCCELA BUS 24TPBGA

Micron Technology Inc.
2,393 -

RFQ

Tape & Reel (TR) Xccela™ - MT35X Active Non-Volatile FLASH FLASH - NOR 2Gb (256M x 8) Xccela Bus 200 MHz - - 1.7V ~ 2V -40°C ~ 105°C Surface Mount
MT44K16M36RB-107E:B TR

MT44K16M36RB-107E:B TR

IC DRAM 576MBIT PARALLEL 168BGA

Micron Technology Inc.
2,737 -

RFQ

MT44K16M36RB-107E:B TR

Ficha técnica

Tape & Reel (TR) - Active Volatile DRAM DRAM 576Mb (16M x 36) Parallel 933 MHz - 8 ns 1.28V ~ 1.42V 0°C ~ 95°C (TC) Surface Mount
MT44K32M18RB-107E:B TR

MT44K32M18RB-107E:B TR

IC DRAM 576MBIT PARALLEL 168BGA

Micron Technology Inc.
2,380 -

RFQ

MT44K32M18RB-107E:B TR

Ficha técnica

Tape & Reel (TR) - Active Volatile DRAM DRAM 576Mb (32M x 18) Parallel 933 MHz - 8 ns 1.28V ~ 1.42V 0°C ~ 95°C (TC) Surface Mount
MT44K16M36RB-107E:B

MT44K16M36RB-107E:B

IC DRAM 576MBIT PARALLEL 168BGA

Micron Technology Inc.
3,689 -

RFQ

MT44K16M36RB-107E:B

Ficha técnica

Tray - Active Volatile DRAM DRAM 576Mb (16M x 36) Parallel 933 MHz - 8 ns 1.28V ~ 1.42V 0°C ~ 95°C (TC) Surface Mount
MT44K32M18RB-107E:B

MT44K32M18RB-107E:B

IC DRAM 576MBIT PARALLEL 168BGA

Micron Technology Inc.
3,306 -

RFQ

MT44K32M18RB-107E:B

Ficha técnica

Tray - Active Volatile DRAM DRAM 576Mb (32M x 18) Parallel 933 MHz - 8 ns 1.28V ~ 1.42V 0°C ~ 95°C (TC) Surface Mount
MT29VZZZAD8FQFSL-046 W.G8K TR

MT29VZZZAD8FQFSL-046 W.G8K TR

ALL IN ONE MCP 544G

Micron Technology Inc.
2,826 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - -
MT49H16M36SJ-25E:B TR

MT49H16M36SJ-25E:B TR

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,448 -

RFQ

MT49H16M36SJ-25E:B TR

Ficha técnica

Tape & Reel (TR) - Active Volatile DRAM DRAM 576Mb (16M x 36) Parallel 400 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT49H16M36SJ-25E:B

MT49H16M36SJ-25E:B

IC DRAM 576MBIT PARALLEL 144FBGA

Micron Technology Inc.
3,237 -

RFQ

MT49H16M36SJ-25E:B

Ficha técnica

Tray - Active Volatile DRAM DRAM 576Mb (16M x 36) Parallel 400 MHz - 15 ns 1.7V ~ 1.9V 0°C ~ 95°C (TC) Surface Mount
MT53D512M64D4RQ-053 WT:E

MT53D512M64D4RQ-053 WT:E

IC DRAM 32GBIT 1866MHZ 556WFBGA

Micron Technology Inc.
2,054 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 32Gb (512M x 64) - 1.866 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT53D512M64D4NZ-046 WT:E

MT53D512M64D4NZ-046 WT:E

IC DRAM 32GBIT 2133MHZ 376WFBGA

Micron Technology Inc.
3,190 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 32Gb (512M x 64) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT53D512M64D4SB-046 XT:E

MT53D512M64D4SB-046 XT:E

IC DRAM 32GBIT 2133MHZ

Micron Technology Inc.
3,786 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 32Gb (512M x 64) - 2.133 GHz - - 1.1V -30°C ~ 105°C (TC) -
MT53D512M64D4NZ-046 WT:E TR

MT53D512M64D4NZ-046 WT:E TR

IC DRAM 32GBIT 2133MHZ 376WFBGA

Micron Technology Inc.
3,363 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 32Gb (512M x 64) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT53D512M64D4RQ-053 WT:E TR

MT53D512M64D4RQ-053 WT:E TR

IC DRAM 32GBIT 1866MHZ 556WFBGA

Micron Technology Inc.
3,455 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 32Gb (512M x 64) - 1.866 GHz - - 1.1V -30°C ~ 85°C (TC) Surface Mount
MT53E1G32D2FW-046 WT:B

MT53E1G32D2FW-046 WT:B

IC DRAM 32GBIT 2.133GHZ 200VFBGA

Micron Technology Inc.
2,273 -

RFQ

MT53E1G32D2FW-046 WT:B

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 32Gb (1G x 32) Parallel 2.133 GHz 18ns 3.5 ns 1.06V ~ 1.17V -25°C ~ 85°C (TC) Surface Mount
MT53E512M64D2HJ-046 WT:B

MT53E512M64D2HJ-046 WT:B

IC DRAM LPDDR4 32G 512MX64 FBGA

Micron Technology Inc.
3,534 -

RFQ

MT53E512M64D2HJ-046 WT:B

Ficha técnica

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 32Gb (512M x 64) Parallel 2.133 GHz 18ns 3.5 ns 1.06V ~ 1.17V -25°C ~ 85°C (TC) Surface Mount
MT53E768M32D4DT-053 AUT:E

MT53E768M32D4DT-053 AUT:E

LPDDR4 24G 1.5GX16 FBGA QDP

Micron Technology Inc.
2,852 -

RFQ

Tray Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR4 24Gb (768M x 32) - 1.866 GHz - - 1.1V -40°C ~ 125°C (TC) -
MT53E768M32D4DT-046 AUT:E TR

MT53E768M32D4DT-046 AUT:E TR

LPDDR4 24G 1.5GX16 FBGA QDP

Micron Technology Inc.
3,658 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR4 24Gb (768M x 32) - 2.133 GHz - - 1.1V -40°C ~ 125°C (TC) -
MT53E768M32D4DT-053 AUT:E TR

MT53E768M32D4DT-053 AUT:E TR

LPDDR4 24G 1.5GX16 FBGA QDP

Micron Technology Inc.
3,733 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR4 24Gb (768M x 32) - 1.866 GHz - - 1.1V -40°C ~ 125°C (TC) -
MT53E768M32D4DT-046 AUT:E

MT53E768M32D4DT-046 AUT:E

LPDDR4 24G 1.5GX16 FBGA QDP

Micron Technology Inc.
3,693 -

RFQ

Tray Automotive, AEC-Q100 Active Volatile DRAM SDRAM - Mobile LPDDR4 24Gb (768M x 32) - 2.133 GHz - - 1.1V -40°C ~ 125°C (TC) -
MT29TZZZ5D6DKFRL-093 W.9A6 TR

MT29TZZZ5D6DKFRL-093 W.9A6 TR

IC FLASH MEM 6G LPDDR2 MLC

Micron Technology Inc.
3,244 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - -
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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