Memória

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
MT44K16M36RB-093E:B TR

MT44K16M36RB-093E:B TR

IC DRAM 576MBIT PARALLEL 168BGA

Micron Technology Inc.
2,822 -

RFQ

MT44K16M36RB-093E:B TR

Ficha técnica

Tape & Reel (TR) - Active Volatile DRAM DRAM 576Mb (16M x 36) Parallel 1.066 GHz - 8 ns 1.28V ~ 1.42V 0°C ~ 95°C (TC) Surface Mount
MT44K16M36RB-093E:B

MT44K16M36RB-093E:B

IC DRAM 576MBIT PARALLEL 168BGA

Micron Technology Inc.
2,322 -

RFQ

Tray - Active Volatile DRAM DRAM 576Mb (16M x 36) Parallel 1.066 GHz - 8 ns 1.28V ~ 1.42V 0°C ~ 95°C (TC) Surface Mount
MT53E1536M32D4DT-046 WT:A TR

MT53E1536M32D4DT-046 WT:A TR

IC DRAM LPDDR4 WFBGA

Micron Technology Inc.
3,147 -

RFQ

Tape & Reel (TR) - Active Volatile DRAM SDRAM - Mobile LPDDR4 48Gb (1.5G x32) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) -
MT53E1536M32D4DT-046 WT:A

MT53E1536M32D4DT-046 WT:A

IC DRAM LPDDR4 WFBGA

Micron Technology Inc.
2,766 -

RFQ

Tray - Active Volatile DRAM SDRAM - Mobile LPDDR4 48Gb (1.5G x32) - 2.133 GHz - - 1.1V -30°C ~ 85°C (TC) -
MT29F512G08CEHBBJ4-3R:B TR

MT29F512G08CEHBBJ4-3R:B TR

IC FLASH 512GBIT PAR 132VBGA

Micron Technology Inc.
3,657 -

RFQ

Tape & Reel (TR) - Not For New Designs Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F512G08CEHBBJ4-3R:B

MT29F512G08CEHBBJ4-3R:B

IC FLASH 512GBIT PAR 132VBGA

Micron Technology Inc.
3,113 -

RFQ

Tray - Not For New Designs Non-Volatile FLASH FLASH - NAND (MLC) 512Gb (64G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29F2T08GELBEJ4:B TR

MT29F2T08GELBEJ4:B TR

QLC 2T 256GX8 VBGA DDP

Micron Technology Inc.
2,592 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (TLC) 2Tb (256G x 8) Parallel - - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MTFC128GASAQJP-AIT TR

MTFC128GASAQJP-AIT TR

IC FLASH 1TB USSD

Micron Technology Inc.
2,991 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NAND 1Tb (128G x 8) eMMC 200 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MTFC128GASAQJP-AIT

MTFC128GASAQJP-AIT

IC FLASH 1TB USSD

Micron Technology Inc.
3,682 -

RFQ

Tray Automotive, AEC-Q100 Active Non-Volatile FLASH FLASH - NAND 1Tb (128G x 8) eMMC 200 MHz - - 2.7V ~ 3.6V -40°C ~ 85°C (TA) Surface Mount
MT29VZZZAD9FQFSM-046 W.G9K TR

MT29VZZZAD9FQFSM-046 W.G9K TR

ALL IN ONE MCP 1056G

Micron Technology Inc.
3,446 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - -
MT29F2T08EMHBFJ4-T:B

MT29F2T08EMHBFJ4-T:B

IC FLASH 2TB PARALLEL 132VBGA

Micron Technology Inc.
2,195 -

RFQ

Bulk - Active Non-Volatile FLASH FLASH - NAND (TLC) 2Tb (256G x 8) Parallel - - - 1.7V ~ 1.95V 0°C ~ 70°C (TA) Surface Mount
MT29F2T08EMHBFJ4-T:B TR

MT29F2T08EMHBFJ4-T:B TR

IC FLASH 2TB PARALLEL 132VBGA

Micron Technology Inc.
2,047 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (TLC) 2Tb (256G x 8) Parallel - - - 1.7V ~ 1.95V 0°C ~ 70°C (TA) Surface Mount
MT29E512G08CEHBBJ4-3:B TR

MT29E512G08CEHBBJ4-3:B TR

IC FLASH 512GBIT PAR 132VBGA

Micron Technology Inc.
2,106 -

RFQ

Tape & Reel (TR) - Not For New Designs Non-Volatile FLASH FLASH - NAND 512Gb (64G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT29E512G08CEHBBJ4-3:B

MT29E512G08CEHBBJ4-3:B

IC FLASH 512GBIT PAR 132VBGA

Micron Technology Inc.
3,584 -

RFQ

Tray - Not For New Designs Non-Volatile FLASH FLASH - NAND 512Gb (64G x 8) Parallel 333 MHz - - 2.5V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
MT44K16M36RB-093F:B TR

MT44K16M36RB-093F:B TR

IC DRAM 576MBIT PARALLEL 168BGA

Micron Technology Inc.
2,241 -

RFQ

MT44K16M36RB-093F:B TR

Ficha técnica

Tape & Reel (TR) - Active Volatile DRAM DRAM 576Mb (16M x 36) Parallel 1.066 GHz - 7.5 ns 1.28V ~ 1.42V 0°C ~ 95°C (TC) Surface Mount
MT44K16M36RB-093F:B

MT44K16M36RB-093F:B

IC DRAM 576MBIT PARALLEL 168BGA

Micron Technology Inc.
2,310 -

RFQ

Tray - Active Volatile DRAM DRAM 576Mb (16M x 36) Parallel 1.066 GHz - 7.5 ns 1.28V ~ 1.42V 0°C ~ 95°C (TC) Surface Mount
MT62F768M64D4EJ-031 WT ES:A

MT62F768M64D4EJ-031 WT ES:A

LPDDR5 48G 768MX64 FBGA QDP

Micron Technology Inc.
3,090 -

RFQ

Bulk - Active - - - - - - - - - - -
MT62F768M64D4EJ-031 WT ES:A TR

MT62F768M64D4EJ-031 WT ES:A TR

LPDDR5 48G 768MX64 FBGA QDP

Micron Technology Inc.
3,466 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - -
MT29F2T08EMHBFJ4-R:B TR

MT29F2T08EMHBFJ4-R:B TR

IC FLASH 2TB PARALLEL 132VBGA

Micron Technology Inc.
3,460 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (TLC) 2Tb (256G x 8) Parallel - - - 1.7V ~ 1.95V 0°C ~ 70°C (TA) Surface Mount
MT29F2T08EMLCEJ4-R:C TR

MT29F2T08EMLCEJ4-R:C TR

IC FLASH 2TB PARALLEL 132VBGA

Micron Technology Inc.
2,840 -

RFQ

Tape & Reel (TR) - Active Non-Volatile FLASH FLASH - NAND (TLC) 2Tb (256G x 8) Parallel - - - 2.7V ~ 3.6V 0°C ~ 70°C (TA) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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