Transistores - FETs, MOSFETs - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
NXH020F120MNF1PTG

NXH020F120MNF1PTG

PIM F1 SIC FULL BRIDGE 1200V 20M

onsemi
2,124 -

RFQ

NXH020F120MNF1PTG

Ficha técnica

Tray - Active 4 N-Channel (Half Bridge) Standard 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170AM45CT1AG

MSCSM170AM45CT1AG

PM-MOSFET-SIC-SBD-SP1F

Microchip Technology
3,289 -

RFQ

MSCSM170AM45CT1AG

Ficha técnica

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM31T1AG

MSCSM120AM31T1AG

PM-MOSFET-SIC-SP1F

Microchip Technology
2,074 -

RFQ

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120DUM31CTBL1NG

MSCSM120DUM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Microchip Technology
2,505 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM31CTBL1NG

MSCSM120AM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Microchip Technology
2,302 -

RFQ

MSCSM120AM31CTBL1NG

Ficha técnica

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) Chassis Mount
MSCSM120TLM50C3AG

MSCSM120TLM50C3AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
3,995 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120DHM31CTBL2NG

MSCSM120DHM31CTBL2NG

PM-MOSFET-SIC-SBD-BL2

Microchip Technology
3,070 -

RFQ

MSCSM120DHM31CTBL2NG

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Asymmetrical Silicon Carbide (SiC) 1200V 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) Chassis Mount
MSCSM120DUM31TBL1NG

MSCSM120DUM31TBL1NG

PM-MOSFET-SIC-BL1

Microchip Technology
3,365 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM31TBL1NG

MSCSM120AM31TBL1NG

PM-MOSFET-SIC-BL1

Microchip Technology
3,613 -

RFQ

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) Chassis Mount
FF11MR12W1M1B70BPSA1

FF11MR12W1M1B70BPSA1

LOW POWER EASY AG-EASY1B-2

Infineon Technologies
3,971 -

RFQ

FF11MR12W1M1B70BPSA1

Ficha técnica

Tray CoolSiC™+ Obsolete 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V 20mW (Tc) -40°C ~ 150°C (TJ) Chassis Mount
MSCSM120DUM16T3AG

MSCSM120DUM16T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
3,016 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
MSCSM120HM50T3AG

MSCSM120HM50T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
3,169 -

RFQ

Bulk - Active 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 2mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70TLM19C3AG

MSCSM70TLM19C3AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
2,794 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170TLM45C3AG

MSCSM170TLM45C3AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
2,463 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120TLM31C3AG

MSCSM120TLM31C3AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
3,935 -

RFQ

Bulk - Active 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70DUM07T3AG

MSCSM70DUM07T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
2,287 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 988W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120HM31CTBL2NG

MSCSM120HM31CTBL2NG

PM-MOSFET-SIC-SBD-BL2

Microchip Technology
3,628 -

RFQ

MSCSM120HM31CTBL2NG

Ficha técnica

Bulk - Active 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) Chassis Mount
MSCSM120DDUM31CTBL2NG

MSCSM120DDUM31CTBL2NG

PM-MOSFET-SIC-SBD-BL2

Microchip Technology
3,278 -

RFQ

MSCSM120DDUM31CTBL2NG

Ficha técnica

Bulk - Active 4 N-Channel, Common Source Silicon Carbide (SiC) 1200V 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) Chassis Mount
MSCSM170HM45CT3AG

MSCSM170HM45CT3AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
3,506 -

RFQ

Bulk - Active 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70TLM10C3AG

MSCSM70TLM10C3AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
3,695 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active 4 N-Channel Silicon Carbide (SiC) 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA (Typ) 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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