Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4459ADY-T1-GE3

SI4459ADY-T1-GE3

MOSFET P-CH 30V 29A 8SO

Vishay Siliconix
12,170 -

RFQ

SI4459ADY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 29A (Tc) 4.5V, 10V 5mOhm @ 15A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 6000 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF10N50FT

FDPF10N50FT

MOSFET N-CH 500V 9A TO220F

onsemi
182 -

RFQ

FDPF10N50FT

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 850mOhm @ 4.5A, 10V 5V @ 250µA 24 nC @ 10 V ±30V 1170 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP7N60NZ

FDP7N60NZ

MOSFET N-CH 600V 6.5A TO220-3

onsemi
995 -

RFQ

FDP7N60NZ

Ficha técnica

Tube UniFET-II™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.5A (Tc) 10V 1.25Ohm @ 3.25A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 730 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL11N65M2

STL11N65M2

MOSFET N-CH 650V POWERFLAT 5X5 H

STMicroelectronics
980 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 670mOhm @ 3.5A, 10V 4V @ 250µA 12.4 nC @ 10 V ±25V 410 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TA) Surface Mount
AOW11N60

AOW11N60

MOSFET N-CH 600V 11A TO262

Alpha & Omega Semiconductor Inc.
775 -

RFQ

AOW11N60

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 700mOhm @ 5.5A, 10V 4.5V @ 250µA 37 nC @ 10 V ±30V 1990 pF @ 25 V - 272W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD9N65M2

STD9N65M2

MOSFET N-CH 650V 5A DPAK

STMicroelectronics
721 -

RFQ

STD9N65M2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 900mOhm @ 2.5A, 10V 4V @ 250µA 10 nC @ 10 V ±25V 315 pF @ 100 V - 60W (Tc) 150°C (TJ) Surface Mount
ZDX080N50

ZDX080N50

MOSFET N-CH 500V 8A TO220FM

Rohm Semiconductor
424 -

RFQ

ZDX080N50

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4A, 10V 4V @ 1mA 23 nC @ 10 V ±30V 1120 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
IRLR8503TR

IRLR8503TR

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,562 -

RFQ

IRLR8503TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8503TRR

IRLR8503TRR

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,542 -

RFQ

IRLR8503TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLU024

IRLU024

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
3,027 -

RFQ

IRLU024

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU110

IRLU110

MOSFET N-CH 100V 4.3A TO251AA

Vishay Siliconix
3,506 -

RFQ

IRLU110

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ14STRL

IRLZ14STRL

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
2,452 -

RFQ

IRLZ14STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ14STRR

IRLZ14STRR

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
3,742 -

RFQ

IRLZ14STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24L

IRLZ24L

MOSFET N-CH 60V 17A TO262-3

Vishay Siliconix
3,352 -

RFQ

IRLZ24L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ24NSTRL

IRLZ24NSTRL

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
3,533 -

RFQ

IRLZ24NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24NSTRR

IRLZ24NSTRR

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
3,611 -

RFQ

IRLZ24NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24S

IRLZ24S

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,457 -

RFQ

IRLZ24S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24STRL

IRLZ24STRL

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
2,452 -

RFQ

IRLZ24STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24STRR

IRLZ24STRR

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,887 -

RFQ

IRLZ24STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ34L

IRLZ34L

MOSFET N-CH 60V 30A TO262-3

Vishay Siliconix
2,080 -

RFQ

IRLZ34L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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