Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR3410TRL

IRLR3410TRL

MOSFET N-CH 100V 17A DPAK

Infineon Technologies
2,087 -

RFQ

IRLR3410TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3410TRR

IRLR3410TRR

MOSFET N-CH 100V 17A DPAK

Infineon Technologies
2,504 -

RFQ

IRLR3410TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8103

IRLR8103

MOSFET N-CH 30V 89A D-PAK

Infineon Technologies
2,259 -

RFQ

IRLR8103

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 89A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 2V @ 250µA (Min) 50 nC @ 5 V ±20V - - 89W (Ta) - Surface Mount
IRLR8103TRL

IRLR8103TRL

MOSFET N-CH 30V 89A DPAK

Vishay Siliconix
3,781 -

RFQ

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 89A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 2V @ 250µA (Min) 50 nC @ 5 V ±20V - - - - Surface Mount
IRLR8103TR

IRLR8103TR

MOSFET N-CH 30V 89A DPAK

Infineon Technologies
2,127 -

RFQ

IRLR8103TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 89A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 2V @ 250µA (Min) 50 nC @ 5 V ±20V - - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR8103TRR

IRLR8103TRR

MOSFET N-CH 30V 89A DPAK

Vishay Siliconix
3,294 -

RFQ

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 89A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 2V @ 250µA (Min) 50 nC @ 5 V ±20V - - - - Surface Mount
IRLR8503TRL

IRLR8503TRL

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,089 -

RFQ

IRLR8503TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP3N80C

FQP3N80C

MOSFET N-CH 800V 3A TO220-3

onsemi
397 -

RFQ

FQP3N80C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 5V @ 250µA 16.5 nC @ 10 V ±30V 705 pF @ 25 V - 107W (Tc) -55°C ~ 150°C (TJ) Through Hole
RD3H200SNTL1

RD3H200SNTL1

MOSFET N-CH 45V 20A TO252

Rohm Semiconductor
269 -

RFQ

RD3H200SNTL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 45 V 20A (Ta) 4V, 10V 28mOhm @ 20A, 10V 2.5V @ 1mA 12 nC @ 5 V ±20V 950 pF @ 10 V - 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STFU6N65

STFU6N65

MOSFET N-CH 650V 4A TO220FP

STMicroelectronics
983 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 2.7Ohm @ 2A, 10V 4V @ 250µA - ±30V 463 pF @ 25 V - 620mW (Ta), 77W (Tc) -55°C ~ 150°C (TA) Through Hole
R8002KND3TL1

R8002KND3TL1

HIGH-SPEED SWITCHING NCH 800V 1.

Rohm Semiconductor
466 -

RFQ

R8002KND3TL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Ta) 10V 4.2Ohm @ 800mA, 10V 4.5V @ 150µA 7.5 nC @ 10 V ±20V 140 pF @ 100 V - 30W (Tc) 150°C (TJ) Surface Mount
STDLED656

STDLED656

MOSFET N-CH 650V 6A DPAK

STMicroelectronics
969 -

RFQ

STDLED656

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 1.3Ohm @ 2.7A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 895 pF @ 100 V - 70W (Tc) 150°C (TJ) Surface Mount
FQP6N60C

FQP6N60C

MOSFET N-CH 600V 5.5A TO220-3

onsemi
852 -

RFQ

FQP6N60C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF2N62K3

STF2N62K3

MOSFET N-CH 620V 2.2A TO220FP

STMicroelectronics
742 -

RFQ

STF2N62K3

Ficha técnica

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 340 pF @ 50 V - 20W (Tc) 150°C (TJ) Through Hole
SI7686DP-T1-GE3

SI7686DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix
577 -

RFQ

SI7686DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 5W (Ta), 37.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7608-55A,118

BUK7608-55A,118

MOSFET N-CH 55V 75A D2PAK

Nexperia USA Inc.
403 -

RFQ

BUK7608-55A,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 25A, 10V 4V @ 1mA 76 nC @ 0 V ±20V 4352 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM100N06CZ C0G

TSM100N06CZ C0G

MOSFET N-CHANNEL 60V 100A TO220

Taiwan Semiconductor Corporation
279 -

RFQ

TSM100N06CZ C0G

Ficha técnica

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 6.7mOhm @ 30A, 10V 4V @ 250µA 92 nC @ 10 V ±20V 4382 pF @ 30 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR220TRRPBF

IRFR220TRRPBF

MOSFET N-CH 200V 4.8A DPAK

Vishay Siliconix
129 -

RFQ

IRFR220TRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF9N65M2

STF9N65M2

MOSFET N-CH 650V 5A TO220FP

STMicroelectronics
855 -

RFQ

STF9N65M2

Ficha técnica

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 900mOhm @ 2.5A, 10V 4V @ 250µA 10 nC @ 10 V ±25V 315 pF @ 100 V - 20W (Tc) 150°C (TJ) Through Hole
STD90N03L

STD90N03L

MOSFET N-CH 30V 80A DPAK

STMicroelectronics
2,015 -

RFQ

STD90N03L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 5V, 10V 5.7mOhm @ 40A, 10V 1V @ 250µA 32 nC @ 5 V ±20V 2805 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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