Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL540L

IRL540L

MOSFET N-CH 100V 28A TO262-3

Vishay Siliconix
2,720 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V - 64 nC @ 5 V ±10V 2200 pF @ 25 V - - - Through Hole
IRL540NSTRR

IRL540NSTRR

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies
2,228 -

RFQ

IRL540NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540STRL

IRL540STRL

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
2,977 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540STRR

IRL540STRR

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
2,204 -

RFQ

IRL540STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL5602L

IRL5602L

MOSFET P-CH 20V 24A TO262

Infineon Technologies
2,086 -

RFQ

IRL5602L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - - - Through Hole
IRL5602

IRL5602

MOSFET P-CH 20V 24A TO220AB

Infineon Technologies
3,821 -

RFQ

IRL5602

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - - - Through Hole
IRL5602STRL

IRL5602STRL

MOSFET P-CH 20V 24A D2PAK

Infineon Technologies
2,846 -

RFQ

IRL5602STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL5602STRR

IRL5602STRR

MOSFET P-CH 20V 24A D2PAK

Infineon Technologies
2,766 -

RFQ

IRL5602STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL620STRL

IRL620STRL

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
3,294 -

RFQ

IRL620STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 10V 800mOhm @ 3.1A, 10V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL620STRR

IRL620STRR

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
2,170 -

RFQ

IRL620STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 10V 800mOhm @ 3.1A, 10V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL630STRR

IRL630STRR

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,968 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL640L

IRL640L

MOSFET N-CH 200V 17A TO262-3

Vishay Siliconix
2,330 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRL640STRL

IRL640STRL

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix
2,745 -

RFQ

IRL640STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL640STRR

IRL640STRR

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix
2,735 -

RFQ

IRL640STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLI2910

IRLI2910

MOSFET N-CH 100V 31A TO220AB FP

Infineon Technologies
3,440 -

RFQ

IRLI2910

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 4V, 10V 26mOhm @ 16A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI540G

IRLI540G

MOSFET N-CH 100V 17A TO220-3

Vishay Siliconix
2,997 -

RFQ

IRLI540G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 5V 77mOhm @ 10A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB5N60CTM-WS

FQB5N60CTM-WS

MOSFET N-CH 600V 4.5A D2PAK

onsemi
767 -

RFQ

FQB5N60CTM-WS

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 100W (Tc) - Surface Mount
FQP12P10

FQP12P10

MOSFET P-CH 100V 11.5A TO220-3

onsemi
103 -

RFQ

FQP12P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 11.5A (Tc) 10V 290mOhm @ 5.75A, 10V 4V @ 250µA 27 nC @ 10 V ±30V 800 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF5N50CYDTU

FQPF5N50CYDTU

MOSFET N-CH 500V 5A TO220F-3

onsemi
713 -

RFQ

FQPF5N50CYDTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMS5P02R2G

NVMS5P02R2G

MOSFET P-CH 20V 3.95A 8SOIC

onsemi
180 -

RFQ

NVMS5P02R2G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 20 V 3.95A (Ta) - 33mOhm @ 5.4A, 4.5V 1.25V @ 250µA 35 nC @ 4.5 V - 1900 pF @ 16 V - - -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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