Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP7N65M2

STP7N65M2

MOSFET N-CH 650V 5A TO220

STMicroelectronics
965 -

RFQ

STP7N65M2

Ficha técnica

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 1.15Ohm @ 2.5A, 10V 4V @ 250µA 9 nC @ 10 V ±25V 270 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
STU5N60M2

STU5N60M2

MOSFET N-CH 600V 3.7A IPAK

STMicroelectronics
851 -

RFQ

STU5N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Tc) 10V 1.4Ohm @ 1.85A, 10V 4V @ 250µA 4.5 nC @ 10 V ±25V 165 pF @ 100 V - 45W (Tc) 150°C (TJ) Through Hole
RSY160P05TL

RSY160P05TL

MOSFET P-CH 45V 16A TCPT3

Rohm Semiconductor
364 -

RFQ

RSY160P05TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 45 V 16A (Ta) 4V, 10V 50mOhm @ 16A, 10V 2.5V @ 1mA 25.5 nC @ 5 V ±20V 2150 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
DMJ7N70SK3-13

DMJ7N70SK3-13

MOSFET N-CH 700V 3.9A TO252

Diodes Incorporated
160 -

RFQ

DMJ7N70SK3-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.9A (Tc) 10V 1.25Ohm @ 2.5A, 10V 4V @ 250µA 13.9 nC @ 10 V ±30V 351 pF @ 50 V - 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD3P50TM

FQD3P50TM

MOSFET P-CH 500V 2.1A DPAK

onsemi
5,708 -

RFQ

FQD3P50TM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) QFET® Active P-Channel MOSFET (Metal Oxide) 500 V 2.1A (Tc) 10V 4.9Ohm @ 1.05A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 660 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3502L

IRL3502L

MOSFET N-CH 20V 110A TO262-3

Vishay Siliconix
2,044 -

RFQ

IRL3502L

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3502STRR

IRL3502STRR

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,912 -

RFQ

IRL3502STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3705NSTRR

IRL3705NSTRR

MOSFET N-CH 55V 89A D2PAK

Infineon Technologies
3,428 -

RFQ

IRL3705NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3803STRR

IRL3803STRR

MOSFET N-CH 30V 140A D2PAK

Infineon Technologies
3,405 -

RFQ

IRL3803STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL510L

IRL510L

MOSFET N-CH 100V 5.6A TO262-3

Vishay Siliconix
2,741 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRL510STRL

IRL510STRL

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
3,489 -

RFQ

IRL510STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL510STRR

IRL510STRR

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
3,221 -

RFQ

IRL510STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520L

IRL520L

MOSFET N-CH 100V 9.2A TO262-3

Vishay Siliconix
3,637 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL520NSTRR

IRL520NSTRR

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
2,523 -

RFQ

IRL520NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520S

IRL520S

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
3,705 -

RFQ

IRL520S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520STRL

IRL520STRL

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
2,956 -

RFQ

IRL520STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520STRR

IRL520STRR

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
3,666 -

RFQ

IRL520STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530L

IRL530L

MOSFET N-CH 100V 15A TO262-3

Vishay Siliconix
3,459 -

RFQ

IRL530L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRL530S

IRL530S

MOSFET N-CH 100V 15A D2PAK

Vishay Siliconix
2,301 -

RFQ

IRL530S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530STRL

IRL530STRL

MOSFET N-CH 100V 15A D2PAK

Vishay Siliconix
3,124 -

RFQ

IRL530STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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