Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMS7692

FDMS7692

MOSFET N-CH 30V 14A/28A 8PQFN

onsemi
148 -

RFQ

FDMS7692

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 28A (Tc) 4.5V, 10V 7.5mOhm @ 13A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1350 pF @ 15 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTD6416ANT4G

NTD6416ANT4G

MOSFET N-CH 100V 17A DPAK

onsemi
995 -

RFQ

NTD6416ANT4G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 81mOhm @ 17A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 620 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP6N65M2

STP6N65M2

MOSFET N-CH 650V 4A TO220

STMicroelectronics
957 -

RFQ

STP6N65M2

Ficha técnica

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.35Ohm @ 2A, 10V 4V @ 250µA 9.8 nC @ 10 V ±25V 226 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI100N06S3L04XK

IPI100N06S3L04XK

MOSFET N-CH 55V 100A TO262-3

Infineon Technologies
2,112 -

RFQ

IPI100N06S3L04XK

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 5V, 10V 3.8mOhm @ 80A, 10V 2.2V @ 150µA 362 nC @ 10 V ±16V 17270 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD17579Q3AT

CSD17579Q3AT

MOSFET N-CH 30V 20A 8VSON

Texas Instruments
186 -

RFQ

CSD17579Q3AT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 10.2mOhm @ 8A, 10V 1.9V @ 250µA 15 nC @ 10 V ±20V 998 pF @ 15 V - 3.2W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP3N30

FQP3N30

MOSFET N-CH 300V 3.2A TO220-3

onsemi
691 -

RFQ

FQP3N30

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.2A (Tc) 10V 2.2Ohm @ 1.6A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 230 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL2203STRL

IRL2203STRL

MOSFET N-CH 30V 100A D2PAK

Vishay Siliconix
3,267 -

RFQ

IRL2203STRL

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4V, 10V 7mOhm @ 60A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 3500 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2203STRR

IRL2203STRR

MOSFET N-CH 30V 100A D2PAK

Vishay Siliconix
2,212 -

RFQ

IRL2203STRR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4V, 10V 7mOhm @ 60A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 3500 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2505STRL

IRL2505STRL

MOSFET N-CH 55V 104A D2PAK

Infineon Technologies
3,257 -

RFQ

IRL2505STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2505STRR

IRL2505STRR

MOSFET N-CH 55V 104A D2PAK

Infineon Technologies
3,652 -

RFQ

IRL2505STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2703STRL

IRL2703STRL

MOSFET N-CH 30V 24A D2PAK

Infineon Technologies
2,489 -

RFQ

IRL2703STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2703STRR

IRL2703STRR

MOSFET N-CH 30V 24A D2PAK

Infineon Technologies
3,490 -

RFQ

IRL2703STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2910STRL

IRL2910STRL

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies
3,981 -

RFQ

IRL2910STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3102L

IRL3102L

MOSFET N-CH 20V 61A TO262-3

Vishay Siliconix
3,436 -

RFQ

IRL3102L

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 20 V 61A (Tc) 4.5V, 7V 13mOhm @ 37A, 7V 700mV @ 250µA (Min) 58 nC @ 4.5 V ±10V 2500 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3102STRL

IRL3102STRL

MOSFET N-CH 20V 61A D2PAK

Infineon Technologies
3,237 -

RFQ

IRL3102STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 61A (Tc) 4.5V, 7V 13mOhm @ 37A, 7V 700mV @ 250µA (Min) 58 nC @ 4.5 V ±10V 2500 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3102STRR

IRL3102STRR

MOSFET N-CH 20V 61A D2PAK

Infineon Technologies
3,875 -

RFQ

IRL3102STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 61A (Tc) 4.5V, 7V 13mOhm @ 37A, 7V 700mV @ 250µA (Min) 58 nC @ 4.5 V ±10V 2500 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3103D1STRL

IRL3103D1STRL

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
3,665 -

RFQ

IRL3103D1STRL

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V ±16V 1900 pF @ 25 V - 3.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3103D1STRR

IRL3103D1STRR

MOSFET N-CH 30V 64A D2PAK

Vishay Siliconix
2,701 -

RFQ

Tape & Reel (TR) FETKY™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) - 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V - 1900 pF @ 25 V - - - Surface Mount
IRL3103D2

IRL3103D2

MOSFET N-CH 30V 54A TO220AB

Infineon Technologies
2,508 -

RFQ

IRL3103D2

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 14mOhm @ 32A, 10V 1V @ 250µA 44 nC @ 4.5 V ±16V 2300 pF @ 25 V - 2W (Ta), 70W (Tc) - Through Hole
IRL3103D2S

IRL3103D2S

MOSFET N-CH 30V 54A D2PAK

Infineon Technologies
2,439 -

RFQ

IRL3103D2S

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 14mOhm @ 32A, 10V - 44 nC @ 4.5 V ±16V 2300 pF @ 25 V - - - Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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