Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ24L

IRFZ24L

MOSFET N-CH 60V 17A TO262-3

Vishay Siliconix
2,776 -

RFQ

IRFZ24L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ24NSTRL

IRFZ24NSTRL

MOSFET N-CH 55V 17A D2PAK

Infineon Technologies
2,473 -

RFQ

IRFZ24NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ24NSTRR

IRFZ24NSTRR

MOSFET N-CH 55V 17A D2PAK

Infineon Technologies
2,035 -

RFQ

IRFZ24NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ24STRL

IRFZ24STRL

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
2,759 -

RFQ

IRFZ24STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ24STRR

IRFZ24STRR

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,690 -

RFQ

IRFZ24STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34L

IRFZ34L

MOSFET N-CH 60V 30A TO262-3

Vishay Siliconix
2,172 -

RFQ

IRFZ34L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34S

IRFZ34S

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
3,789 -

RFQ

IRFZ34S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34STRL

IRFZ34STRL

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
2,430 -

RFQ

IRFZ34STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34STRR

IRFZ34STRR

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
2,784 -

RFQ

IRFZ34STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44ESTRL

IRFZ44ESTRL

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies
2,631 -

RFQ

IRFZ44ESTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44L

IRFZ44L

MOSFET N-CH 60V 50A TO262-3

Vishay Siliconix
2,801 -

RFQ

IRFZ44L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44NSTRR

IRFZ44NSTRR

MOSFET N-CH 55V 49A D2PAK

Infineon Technologies
2,112 -

RFQ

IRFZ44NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44STRL

IRFZ44STRL

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,158 -

RFQ

IRFZ44STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS8449

FDS8449

MOSFET N-CH 40V 7.6A 8SOIC

onsemi
285 -

RFQ

FDS8449

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 7.6A (Ta) 4.5V, 10V 29mOhm @ 7.6A, 10V 3V @ 250µA 11 nC @ 5 V ±20V 760 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPS65R950C6AKMA1

IPS65R950C6AKMA1

MOSFET N-CH 650V 4.5A TO251-3

Infineon Technologies
150 -

RFQ

IPS65R950C6AKMA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS6692A

FDS6692A

MOSFET N-CH 30V 9A 8SOIC

onsemi
770 -

RFQ

FDS6692A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 11.5mOhm @ 9A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1610 pF @ 15 V - 1.47W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT10H015LFG-7

DMT10H015LFG-7

MOSFET N-CH 100V PWRDI3333

Diodes Incorporated
3,192 -

RFQ

DMT10H015LFG-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 42A (Tc) 6V, 10V 13.5mOhm @ 20A, 10V 3.5V @ 250µA 33.3 nC @ 10 V ±20V 1871 pF @ 50 V - 2W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GKI07301

GKI07301

MOSFET N-CH 75V 6A 8DFN

Sanken
388 -

RFQ

GKI07301

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 6A (Ta) 4.5V, 10V 23.2mOhm @ 12.4A, 10V 2.5V @ 350µA 24 nC @ 10 V ±20V 1580 pF @ 25 V - 3.1W (Ta), 46W (Tc) 150°C (TJ) Surface Mount
IRFZ46NSTRL

IRFZ46NSTRL

MOSFET N-CH 55V 53A D2PAK

Infineon Technologies
2,452 -

RFQ

IRFZ46NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48L

IRFZ48L

MOSFET N-CH 60V 50A TO262-3

Vishay Siliconix
3,789 -

RFQ

IRFZ48L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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