Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI3437DV-T1-E3

SI3437DV-T1-E3

MOSFET P-CH 150V 1.4A 6TSOP

Vishay Siliconix
2,131 -

RFQ

SI3437DV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 1.4A (Tc) 6V, 10V 750mOhm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 510 pF @ 50 V - 2W (Ta), 3.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPN4R712MD,L1Q

TPN4R712MD,L1Q

MOSFET P-CH 20V 36A 8TSON

Toshiba Semiconductor and Storage
202 -

RFQ

TPN4R712MD,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 2.5V, 4.5V 4.7mOhm @ 18A, 4.5V 1.2V @ 1mA 65 nC @ 5 V ±12V 4300 pF @ 10 V - 42W (Tc) 150°C (TJ) Surface Mount
STP3LN62K3

STP3LN62K3

MOSFET N-CH 620V 2.5A TO220

STMicroelectronics
964 -

RFQ

STP3LN62K3

Ficha técnica

Tube SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 620 V 2.5A (Tc) 10V 3Ohm @ 1.25A, 10V 4.5V @ 50µA 17 nC @ 10 V ±30V 386 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
IRFR220TRLPBF

IRFR220TRLPBF

MOSFET N-CH 200V 4.8A DPAK

Vishay Siliconix
498 -

RFQ

IRFR220TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC7692

FDMC7692

MOSFET N-CH 30V 13.3A/16A 8MLP

onsemi
340 -

RFQ

FDMC7692

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta), 16A (Tc) 4.5V, 10V 8.5mOhm @ 13.3A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 1680 pF @ 15 V - 2.3W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4436DY-T1-GE3

SI4436DY-T1-GE3

MOSFET N-CH 60V 8A 8SO

Vishay Siliconix
2,623 -

RFQ

SI4436DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 36mOhm @ 4.6A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1100 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR474DP-T1-GE3

SIR474DP-T1-GE3

MOSFET N-CH 30V 20A PPAK SO-8

Vishay Siliconix
618 -

RFQ

SIR474DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 9.5mOhm @ 10A, 10V 2.2V @ 250µA 27 nC @ 10 V ±20V 985 pF @ 15 V - 3.9W (Ta), 29.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ECH8308-TL-H

ECH8308-TL-H

MOSFET P-CH 12V 10A 8ECH

onsemi
256 -

RFQ

ECH8308-TL-H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 10A (Ta) 1.8V, 4.5V 12.5mOhm @ 5A, 4.5V - 26 nC @ 4.5 V ±10V 2300 pF @ 6 V - 1.6W (Ta) 150°C (TJ) Surface Mount
ZXMP3A16N8TA

ZXMP3A16N8TA

MOSFET P-CH 30V 5.6A 8SO

Diodes Incorporated
691 -

RFQ

ZXMP3A16N8TA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5.6A (Ta) 4.5V, 10V 40mOhm @ 4.2A, 10V 1V @ 250µA 29.6 nC @ 10 V ±20V 1022 pF @ 15 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
CPC3902ZTR

CPC3902ZTR

MOSFET N-CH 250V SOT223

IXYS Integrated Circuits Division
813 -

RFQ

CPC3902ZTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V - 0V 2.5Ohm @ 300mA, 0V - - ±15V 230 pF @ 20 V Depletion Mode 1.8W (Tc) -55°C ~ 110°C (TA) Surface Mount
MCAC90N04-TP

MCAC90N04-TP

N-CHANNEL MOSFET, DFN5060

Micro Commercial Co
286 -

RFQ

MCAC90N04-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) - 4.5mOhm @ 20A, 10V 2V @ 250µA 95 nC @ 10 V ±20V 2420 pF @ 20 V - 55W -55°C ~ 175°C (TJ) Surface Mount
STB4NK60Z-1

STB4NK60Z-1

MOSFET N-CH 600V 4A I2PAK

STMicroelectronics
3,598 -

RFQ

STB4NK60Z-1

Ficha técnica

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 70W (Tc) 150°C (TJ) Through Hole
STD100NH02LT4

STD100NH02LT4

MOSFET N-CH 24V 60A DPAK

STMicroelectronics
8,622 -

RFQ

STD100NH02LT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 24 V 60A (Tc) 5V, 10V 4.8mOhm @ 30A, 10V 1.8V @ 250µA 84 nC @ 10 V ±20V 3940 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD7N25LZTM

FDD7N25LZTM

MOSFET N-CH 250V 6.2A DPAK

onsemi
202 -

RFQ

FDD7N25LZTM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 6.2A (Tc) 5V, 10V 550mOhm @ 3.1A, 10V 2V @ 250µA 16 nC @ 10 V ±20V 635 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RF4E070BNTR

RF4E070BNTR

MOSFET N-CH 30V 7A HUML2020L8

Rohm Semiconductor
860 -

RFQ

RF4E070BNTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 28.6mOhm @ 7A, 10V 2V @ 250µA 8.9 nC @ 10 V ±20V 410 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
IRFS41N15DTRR

IRFS41N15DTRR

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
2,198 -

RFQ

IRFS41N15DTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRFS9N60ATRL

IRFS9N60ATRL

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix
2,326 -

RFQ

IRFS9N60ATRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS9N60ATRR

IRFS9N60ATRR

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix
3,038 -

RFQ

IRFS9N60ATRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL31N20DTRL

IRFSL31N20DTRL

MOSFET N-CH 200V 31A I2PAK

Vishay Siliconix
2,212 -

RFQ

IRFSL31N20DTRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL31N20DTRR

IRFSL31N20DTRR

MOSFET N-CH 200V 31A I2PAK

Vishay Siliconix
3,946 -

RFQ

IRFSL31N20DTRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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