Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFSL41N15D

IRFSL41N15D

MOSFET N-CH 150V 41A TO262

Infineon Technologies
3,094 -

RFQ

IRFSL41N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFSL9N60ATRL

IRFSL9N60ATRL

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix
3,631 -

RFQ

IRFSL9N60ATRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIS454DN-T1-GE3

SIS454DN-T1-GE3

MOSFET N-CH 20V 35A PPAK1212-8

Vishay Siliconix
9,629 -

RFQ

SIS454DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V 2.2V @ 250µA 53 nC @ 10 V ±20V 1900 pF @ 10 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RS1E280GNTB

RS1E280GNTB

MOSFET N-CH 30V 28A 8HSOP

Rohm Semiconductor
969 -

RFQ

RS1E280GNTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta) 4.5V, 10V 2.6mOhm @ 28A, 10V 2.5V @ 1mA 36 nC @ 10 V ±20V 2300 pF @ 15 V - 3W (Ta), 31W (Tc) 150°C (TJ) Surface Mount
SIR186LDP-T1-RE3

SIR186LDP-T1-RE3

N-CHANNEL 60-V (D-S) MOSFET POWE

Vishay Siliconix
3,597 -

RFQ

SIR186LDP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 23.8A (Ta), 80.3A (Tc) 4.5V, 10V 4.4mOhm @ 15A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 1980 pF @ 30 V - 5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFT1445-TL-H

SFT1445-TL-H

MOSFET N-CH 100V 17A TP-FA

onsemi
300 -

RFQ

SFT1445-TL-H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Ta) 4V, 10V 111mOhm @ 8.5A, 10V 2.6V @ 1mA 19 nC @ 10 V ±20V 1030 pF @ 20 V - 1W (Ta), 35W (Tc) 150°C (TJ) Surface Mount
IRFSL9N60ATRR

IRFSL9N60ATRR

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix
2,873 -

RFQ

IRFSL9N60ATRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
STU65N3LLH5

STU65N3LLH5

MOSFET N CH 30V 65A IPAK

STMicroelectronics
436 -

RFQ

STU65N3LLH5

Ficha técnica

Tube STripFET™ V Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 7.3mOhm @ 32.5A, 10V 3V @ 250µA 8 nC @ 4.5 V ±22V 1290 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPSA70R750P7SAKMA1

IPSA70R750P7SAKMA1

MOSFET N-CH 700V 6.5A TO251-3

Infineon Technologies
350 -

RFQ

IPSA70R750P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6.5A (Tc) 10V 750mOhm @ 1.4A, 10V 3.5V @ 70µA 8.3 nC @ 400 V ±16V 306 pF @ 400 V - 34.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFU010

IRFU010

MOSFET N-CH 50V 8.2A TO251AA

Vishay Siliconix
3,472 -

RFQ

IRFU010

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) 10V 200mOhm @ 4.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK765R3-40E,118

BUK765R3-40E,118

MOSFET N-CH 40V 75A D2PAK

Nexperia USA Inc.
3,706 -

RFQ

BUK765R3-40E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.9mOhm @ 25A, 10V 4V @ 1mA 35.5 nC @ 10 V ±20V 2772 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU1N60A

IRFU1N60A

MOSFET N-CH 600V 1.4A TO251AA

Vishay Siliconix
2,740 -

RFQ

IRFU1N60A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK9614-60E,118

BUK9614-60E,118

MOSFET N-CH 60V 56A D2PAK

Nexperia USA Inc.
635 -

RFQ

BUK9614-60E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 5V 12.8mOhm @ 15A, 10V 2.1V @ 1mA 20.5 nC @ 5 V ±10V 2651 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU9010

IRFU9010

MOSFET P-CH 50V 5.3A TO251AA

Vishay Siliconix
3,284 -

RFQ

IRFU9010

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS4C13NT1G

NTMFS4C13NT1G

MOSFET N-CH 30V 7.2A/38A 5DFN

onsemi
960 -

RFQ

NTMFS4C13NT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta), 38A (Tc) 4.5V, 10V 9.1mOhm @ 30A, 10V 2.1V @ 250µA 15.2 nC @ 10 V ±20V 770 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFZ10

IRFZ10

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
2,203 -

RFQ

IRFZ10

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
STTFS015N10MCL

STTFS015N10MCL

-

onsemi
587 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
IRFZ14L

IRFZ14L

MOSFET N-CH 60V 10A TO262-3

Vishay Siliconix
3,159 -

RFQ

IRFZ14L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ14STRL

IRFZ14STRL

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
3,189 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ14STRR

IRFZ14STRR

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
2,469 -

RFQ

IRFZ14STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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