Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ48S

IRFZ48S

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
3,586 -

RFQ

IRFZ48S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48STRL

IRFZ48STRL

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,563 -

RFQ

IRFZ48STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48STRR

IRFZ48STRR

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,057 -

RFQ

IRFZ48STRR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1004STRL

IRL1004STRL

MOSFET N-CH 40V 130A D2PAK

Infineon Technologies
2,597 -

RFQ

IRL1004STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1004STRR

IRL1004STRR

MOSFET N-CH 40V 130A D2PAK

Infineon Technologies
2,815 -

RFQ

IRL1004STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1104STRL

IRL1104STRL

MOSFET N-CH 40V 104A D2PAK

Infineon Technologies
2,285 -

RFQ

IRL1104STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 2.4W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1104STRR

IRL1104STRR

MOSFET N-CH 40V 104A D2PAK

Infineon Technologies
2,979 -

RFQ

IRL1104STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 2.4W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2203NSTRR

IRL2203NSTRR

MOSFET N-CH 30V 116A D2PAK

Infineon Technologies
2,041 -

RFQ

IRL2203NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 3V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 3.8W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS7570S

FDMS7570S

MOSFET N-CH 25V 28A/49A 8PQFN

onsemi
523 -

RFQ

FDMS7570S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench®, SyncFET™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28A (Ta), 49A (Tc) 4.5V, 10V 1.95mOhm @ 28A, 10V 3V @ 1mA 69 nC @ 10 V ±20V 4515 pF @ 13 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMA905P

FDMA905P

MOSFET P-CH 12V 10A 6MICROFET

onsemi
6,000 -

RFQ

FDMA905P

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 10A (Ta) 1.8V, 4.5V 16mOhm @ 10A, 4.5V 1V @ 250µA 29 nC @ 6 V ±8V 3405 pF @ 6 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
CPC3703CTR

CPC3703CTR

MOSFET N-CH 250V 360MA SOT89-3

IXYS Integrated Circuits Division
3,166 -

RFQ

CPC3703CTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 360mA (Ta) 0V 4Ohm @ 200mA, 0V - - ±15V 350 pF @ 25 V Depletion Mode 1.1W (Ta) -55°C ~ 125°C (TA) Surface Mount
IRFSL7762PBF

IRFSL7762PBF

MOSFET N-CH 75V 85A TO262

Infineon Technologies
3,495 -

RFQ

IRFSL7762PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 85A (Tc) 6V, 10V 6.7mOhm @ 51A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4440 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
RCJ081N20TL

RCJ081N20TL

MOSFET N-CH 200V 8A LPTS

Rohm Semiconductor
840 -

RFQ

RCJ081N20TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) 10V 770mOhm @ 4A, 10V 5.25V @ 1mA 8.5 nC @ 10 V ±30V 330 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
TSM1N80CW RPG

TSM1N80CW RPG

MOSFET N-CH 800V 300MA SOT223

Taiwan Semiconductor Corporation
3,274 -

RFQ

TSM1N80CW RPG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 300mA (Ta) 10V 21.6Ohm @ 150mA, 10V 5V @ 250µA 6 nC @ 10 V ±30V 200 pF @ 25 V - 2.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ATP202-TL-H

ATP202-TL-H

MOSFET N-CH 30V 50A ATPAK

onsemi
3,256 -

RFQ

ATP202-TL-H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) 4.5V, 10V 12mOhm @ 25A, 10V - 27 nC @ 10 V ±20V 1650 pF @ 10 V - 40W (Tc) 150°C (TJ) Surface Mount
ZDX050N50

ZDX050N50

MOSFET N-CH 500V 5A TO220FM

Rohm Semiconductor
192 -

RFQ

ZDX050N50

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 14 nC @ 10 V ±30V 600 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
SI4459BDY-T1-GE3

SI4459BDY-T1-GE3

MOSFET P-CH 30V 20.5A/27.8A 8SO

Vishay Siliconix
773 -

RFQ

SI4459BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 20.5A (Ta), 27.8A (Tc) 4.5V, 10V 4.9mOhm @ 15A, 10V 2.2V @ 250µA 84 nC @ 10 V +20V, -16V 3490 pF @ 15 V - 3.1W (Ta), 5.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4894BDY-T1-GE3

SI4894BDY-T1-GE3

MOSFET N-CH 30V 8.9A 8SO

Vishay Siliconix
256 -

RFQ

SI4894BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8.9A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1580 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR460DP-T1-GE3

SIR460DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
185 -

RFQ

SIR460DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4.7mOhm @ 15A, 10V 2.4V @ 250µA 54 nC @ 10 V ±20V 2071 pF @ 15 V - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR310TRPBF-BE3

IRFR310TRPBF-BE3

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix
152 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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