Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI5449DC-T1-GE3

SI5449DC-T1-GE3

MOSFET P-CH 30V 3.1A 1206-8

Vishay Siliconix
2,527 -

RFQ

SI5449DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 2.5V, 4.5V 85mOhm @ 3.1A, 4.5V 600mV @ 250µA (Min) 11 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5461EDC-T1-E3

SI5461EDC-T1-E3

MOSFET P-CH 20V 4.5A 1206-8

Vishay Siliconix
3,849 -

RFQ

SI5461EDC-T1-E3

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 45mOhm @ 5A, 4.5V 450mV @ 250µA (Min) 20 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5461EDC-T1-GE3

SI5461EDC-T1-GE3

MOSFET P-CH 20V 4.5A 1206-8

Vishay Siliconix
3,663 -

RFQ

SI5461EDC-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 45mOhm @ 5A, 4.5V 450mV @ 250µA (Min) 20 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5463EDC-T1-GE3

SI5463EDC-T1-GE3

MOSFET P-CH 20V 3.8A 1206-8

Vishay Siliconix
2,770 -

RFQ

SI5463EDC-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.8A (Ta) 1.8V, 4.5V 62mOhm @ 4A, 4.5V 450mV @ 250µA (Min) 15 nC @ 4.5 V ±12V - - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7440DP-T1-E3

SI7440DP-T1-E3

MOSFET N-CH 30V 12A PPAK SO-8

Vishay Siliconix
2,860 -

RFQ

SI7440DP-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 6.5mOhm @ 21A, 10V 3V @ 250µA 35 nC @ 4.5 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7440DP-T1-GE3

SI7440DP-T1-GE3

MOSFET N-CH 30V 12A PPAK SO-8

Vishay Siliconix
3,988 -

RFQ

SI7440DP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 6.5mOhm @ 21A, 10V 3V @ 250µA 35 nC @ 4.5 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7445DP-T1-E3

SI7445DP-T1-E3

MOSFET P-CH 20V 12A PPAK 1212-8

Vishay Siliconix
3,362 -

RFQ

SI7445DP-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 1.8V, 4.5V 7.7mOhm @ 19A, 4.5V 1V @ 250µA 140 nC @ 5 V ±8V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7445DP-T1-GE3

SI7445DP-T1-GE3

MOSFET P-CH 20V 12A PPAK 1212-8

Vishay Siliconix
2,847 -

RFQ

SI7445DP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 1.8V, 4.5V 7.7mOhm @ 19A, 4.5V 1V @ 250µA 140 nC @ 5 V ±8V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2301CDS-T1-BE3

SI2301CDS-T1-BE3

P-CHANNEL 20-V (D-S) MOSFET

Vishay Siliconix
2,840 -

RFQ

SI2301CDS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2.3A (Ta), 3.1A (Tc) 2.5V, 4.5V 112mOhm @ 2.8A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±8V 405 pF @ 10 V - 860mW (Ta), 1.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4176DY-T1-E3

SI4176DY-T1-E3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix
2,220 -

RFQ

SI4176DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 20mOhm @ 8.3A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 490 pF @ 15 V - 2.4W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1433DH-T1-GE3

SI1433DH-T1-GE3

MOSFET P-CH 30V 1.9A SC70-6

Vishay Siliconix
3,403 -

RFQ

SI1433DH-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 4.5V, 10V 150mOhm @ 2.2A, 10V 3V @ 100µA 5 nC @ 4.5 V ±20V - - 950mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQA440CEJW-T1_GE3

SQA440CEJW-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix
2,062 -

RFQ

SQA440CEJW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 9A (Tc) 4.5V, 10V 14.4mOhm @ 5A, 10V 2.2V @ 250µA 17.5 nC @ 10 V ±20V 880 pF @ 25 V - 13.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SI2323DDS-T1-BE3

SI2323DDS-T1-BE3

P-CHANNEL 20-V (D-S) MOSFET

Vishay Siliconix
3,719 -

RFQ

SI2323DDS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta), 5.3A (Tc) 1.8V, 4.5V 39mOhm @ 4.1A, 4.5V 1V @ 250µA 36 nC @ 8 V ±8V 1160 pF @ 10 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1450DH-T1-GE3

SI1450DH-T1-GE3

MOSFET N-CH 8V 4.53A/6.04A SC70

Vishay Siliconix
2,356 -

RFQ

SI1450DH-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 8 V 4.53A (Ta), 6.04A (Tc) 1.5V, 4.5V 47mOhm @ 4A, 4.5V 1V @ 250µA 7.05 nC @ 5 V ±5V 535 pF @ 4 V - 1.56W (Ta), 2.78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1488DH-T1-GE3

SI1488DH-T1-GE3

MOSFET N-CH 20V 6.1A SC70-6

Vishay Siliconix
3,570 -

RFQ

SI1488DH-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.1A (Tc) 1.8V, 4.5V 49mOhm @ 4.6A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±8V 530 pF @ 10 V - 1.5W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2302ADS-T1-GE3

SI2302ADS-T1-GE3

MOSFET N-CH 20V 2.1A SOT23-3

Vishay Siliconix
2,783 -

RFQ

SI2302ADS-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.1A (Ta) 2.5V, 4.5V 60mOhm @ 3.6A, 4.5V 1.2V @ 50µA 10 nC @ 4.5 V ±8V 300 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2303BDS-T1-GE3

SI2303BDS-T1-GE3

MOSFET P-CH 30V 1.49A SOT23-3

Vishay Siliconix
3,203 -

RFQ

SI2303BDS-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 1.49A (Ta) 4.5V, 10V 200mOhm @ 1.7A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 180 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2311DS-T1-E3

SI2311DS-T1-E3

MOSFET P-CH 8V 3A SOT23-3

Vishay Siliconix
3,666 -

RFQ

SI2311DS-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 3A (Ta) 1.8V, 4.5V 45mOhm @ 3.5A, 4.5V 800mV @ 250µA 12 nC @ 4.5 V ±8V 970 pF @ 4 V - 710mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2311DS-T1-GE3

SI2311DS-T1-GE3

MOSFET P-CH 8V 3A SOT23-3

Vishay Siliconix
2,720 -

RFQ

SI2311DS-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 3A (Ta) 1.8V, 4.5V 45mOhm @ 3.5A, 4.5V 800mV @ 250µA 12 nC @ 4.5 V ±8V 970 pF @ 4 V - 710mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2321DS-T1-E3

SI2321DS-T1-E3

MOSFET P-CH 20V 2.9A SOT23-3

Vishay Siliconix
2,602 -

RFQ

SI2321DS-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.9A (Ta) 1.8V, 4.5V 57mOhm @ 3.3A, 4.5V 900mV @ 250µA 13 nC @ 4.5 V ±8V 715 pF @ 6 V - 710mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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