Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI3456CDV-T1-GE3

SI3456CDV-T1-GE3

MOSFET N-CH 30V 7.7A 6TSOP

Vishay Siliconix
2,833 -

RFQ

SI3456CDV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.7A (Tc) 4.5V, 10V 34mOhm @ 6.1A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 460 pF @ 15 V - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3464DV-T1-BE3

SI3464DV-T1-BE3

N-CHANNEL 20-V (D-S) MOSFET

Vishay Siliconix
2,380 -

RFQ

SI3464DV-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta), 8A (Tc) 1.8V, 4.5V 24mOhm @ 7.5A, 4.5V 1V @ 250µA 18 nC @ 5 V ±8V 1065 pF @ 10 V - 2W (Ta), 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2333CDS-T1-BE3

SI2333CDS-T1-BE3

P-CHANNEL 12-V (D-S) MOSFET

Vishay Siliconix
3,936 -

RFQ

SI2333CDS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 5.1A (Ta), 7.1A (Tc) 1.8V, 4.5V 35mOhm @ 5.1A, 4.5V 1V @ 250µA 25 nC @ 4.5 V ±8V 1225 pF @ 6 V - 1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3457BDV-T1-GE3

SI3457BDV-T1-GE3

MOSFET P-CH 30V 3.7A 6TSOP

Vishay Siliconix
3,135 -

RFQ

SI3457BDV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.7A (Ta) 4.5V, 10V 54mOhm @ 5A, 10V 3V @ 250µA 19 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3460DV-T1-GE3

SI3460DV-T1-GE3

MOSFET N-CH 20V 5.1A 6TSOP

Vishay Siliconix
3,176 -

RFQ

SI3460DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5.1A (Ta) 1.8V, 4.5V 27mOhm @ 5.1A, 4.5V 450mV @ 1mA (Min) 20 nC @ 4.5 V ±8V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3465DV-T1-GE3

SI3465DV-T1-GE3

MOSFET P-CH 20V 3A 6TSOP

Vishay Siliconix
2,476 -

RFQ

SI3465DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 4.5V, 10V 80mOhm @ 4A, 10V 3V @ 250µA 5.5 nC @ 5 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3467DV-T1-GE3

SI3467DV-T1-GE3

MOSFET P-CH 20V 3.8A 6TSOP

Vishay Siliconix
2,853 -

RFQ

SI3467DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.8A (Ta) 4.5V, 10V 54mOhm @ 5A, 10V 3V @ 250µA 13 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3473DV-T1-GE3

SI3473DV-T1-GE3

MOSFET P-CH 12V 5.9A 6TSOP

Vishay Siliconix
2,835 -

RFQ

SI3473DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5.9A (Ta) 1.8V, 4.5V 23mOhm @ 7.9A, 4.5V 1V @ 250µA 33 nC @ 4.5 V ±8V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3481DV-T1-GE3

SI3481DV-T1-GE3

MOSFET P-CH 30V 4A 6TSOP

Vishay Siliconix
3,618 -

RFQ

SI3481DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 48mOhm @ 5.3A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3483DV-T1-GE3

SI3483DV-T1-GE3

MOSFET P-CH 30V 4.7A 6TSOP

Vishay Siliconix
3,584 -

RFQ

SI3483DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 35mOhm @ 6.2A, 10V 3V @ 250µA 35 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3493DV-T1-E3

SI3493DV-T1-E3

MOSFET P-CH 20V 5.3A 6TSOP

Vishay Siliconix
3,065 -

RFQ

SI3493DV-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 1.8V, 4.5V 27mOhm @ 7A, 4.5V 1V @ 250µA 32 nC @ 4.5 V ±8V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3493DV-T1-GE3

SI3493DV-T1-GE3

MOSFET P-CH 20V 5.3A 6TSOP

Vishay Siliconix
2,573 -

RFQ

SI3493DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 1.8V, 4.5V 27mOhm @ 7A, 4.5V 1V @ 250µA 32 nC @ 4.5 V ±8V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3495DV-T1-GE3

SI3495DV-T1-GE3

MOSFET P-CH 20V 5.3A 6TSOP

Vishay Siliconix
3,672 -

RFQ

SI3495DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 1.5V, 4.5V 24mOhm @ 7A, 4.5V 750mV @ 250µA 38 nC @ 4.5 V ±5V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SISH536DN-T1-GE3

SISH536DN-T1-GE3

N-CHANNEL 30 V (D-S) MOSFET POWE

Vishay Siliconix
3,021 -

RFQ

SISH536DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 30 V 24.7A (Ta), 67.4A (Tc) 4.5V, 10V 3.25mOhm @ 10A, 10V 2.2V @ 250µA 25 nC @ 10 V +16V, -12V 1150 pF @ 15 V - 3.57W (Ta), 26.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3805DV-T1-E3

SI3805DV-T1-E3

MOSFET P-CH 20V 3.3A 6TSOP

Vishay Siliconix
2,638 -

RFQ

SI3805DV-T1-E3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.3A (Tc) 2.5V, 10V 84mOhm @ 3A, 10V 1.5V @ 250µA 12 nC @ 10 V ±12V 330 pF @ 10 V Schottky Diode (Isolated) 1.1W (Ta), 1.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3812DV-T1-GE3

SI3812DV-T1-GE3

MOSFET N-CH 20V 2A 6TSOP

Vishay Siliconix
2,175 -

RFQ

SI3812DV-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 125mOhm @ 2.4A, 4.5V 600mV @ 250µA (Min) 4 nC @ 4.5 V ±12V - Schottky Diode (Isolated) 830mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3853DV-T1-GE3

SI3853DV-T1-GE3

MOSFET P-CH 20V 1.6A 6TSOP

Vishay Siliconix
2,963 -

RFQ

SI3853DV-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.6A (Ta) 2.5V, 4.5V 200mOhm @ 1.8A, 4.5V 500mV @ 250µA (Min) 4 nC @ 4.5 V ±12V - Schottky Diode (Isolated) 830mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3867DV-T1-GE3

SI3867DV-T1-GE3

MOSFET P-CH 20V 3.9A 6TSOP

Vishay Siliconix
2,288 -

RFQ

SI3867DV-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 2.5V, 4.5V 51mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11 nC @ 4.5 V ±12V - - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3879DV-T1-E3

SI3879DV-T1-E3

MOSFET P-CH 20V 5A 6TSOP

Vishay Siliconix
2,550 -

RFQ

SI3879DV-T1-E3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Tc) 2.5V, 4.5V 70mOhm @ 3.5A, 4.5V 1.5V @ 250µA 14.5 nC @ 10 V ±12V 480 pF @ 10 V - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3879DV-T1-GE3

SI3879DV-T1-GE3

MOSFET P-CH 20V 5A 6TSOP

Vishay Siliconix
3,888 -

RFQ

SI3879DV-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Tc) 2.5V, 4.5V 70mOhm @ 3.5A, 4.5V 1.5V @ 250µA 14.5 nC @ 10 V ±12V 480 pF @ 10 V - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 4747 Record«Prev1... 119120121122123124125126...238Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário