Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHFL210TR-GE3

SIHFL210TR-GE3

MOSFET N-CHANNEL 200V

Vishay Siliconix
2,488 -

RFQ

SIHFL210TR-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 960mA (Tc) 10V 1.5Ohm @ 580mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2316BDS-T1-BE3

SI2316BDS-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
3,962 -

RFQ

SI2316BDS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3.9A (Ta), 4.5A (Tc) 4.5V, 10V 50mOhm @ 3.9A, 10V 3V @ 250µA 9.6 nC @ 10 V ±20V 350 pF @ 15 V - 1.25W (Ta), 1.66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2364EES-T1_BE3

SQ2364EES-T1_BE3

N-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix
3,622 -

RFQ

SQ2364EES-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Tc) 1.5V, 4.5V 240mOhm @ 2A, 4.5V 1V @ 250µA 2.5 nC @ 4.5 V ±8V 330 pF @ 25 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4632DY-T1-GE3

SI4632DY-T1-GE3

MOSFET N-CH 25V 40A 8SO

Vishay Siliconix
3,946 -

RFQ

SI4632DY-T1-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V 2.6V @ 250µA 161 nC @ 10 V ±16V 11175 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4636DY-T1-E3

SI4636DY-T1-E3

MOSFET N-CH 30V 17A 8SO

Vishay Siliconix
3,183 -

RFQ

SI4636DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 60 nC @ 10 V ±16V 2635 pF @ 15 V - 2.5W (Ta), 4.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4638DY-T1-E3

SI4638DY-T1-E3

MOSFET N-CH 30V 22.4A 8SO

Vishay Siliconix
2,080 -

RFQ

SI4638DY-T1-E3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 22.4A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 2.7V @ 1mA 100 nC @ 10 V ±20V 4190 pF @ 15 V - 3W (Ta), 5.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4646DY-T1-E3

SI4646DY-T1-E3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix
2,850 -

RFQ

SI4646DY-T1-E3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 11.5mOhm @ 10A, 10V 2.5V @ 1mA 45 nC @ 10 V ±20V 1790 pF @ 15 V - 3W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4646DY-T1-GE3

SI4646DY-T1-GE3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix
2,010 -

RFQ

SI4646DY-T1-GE3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 11.5mOhm @ 10A, 10V 2.5V @ 1mA 45 nC @ 10 V ±20V 1790 pF @ 15 V - 3W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4654DY-T1-E3

SI4654DY-T1-E3

MOSFET N-CH 25V 28.6A 8SO

Vishay Siliconix
3,501 -

RFQ

SI4654DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 28.6A (Tc) 4.5V, 10V 4mOhm @ 15A, 10V 2.5V @ 250µA 100 nC @ 10 V ±16V 3770 pF @ 15 V - 2.5W (Ta), 5.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4660DY-T1-E3

SI4660DY-T1-E3

MOSFET N-CH 25V 23.1A 8SO

Vishay Siliconix
3,473 -

RFQ

SI4660DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 23.1A (Tc) 4.5V, 10V 5.8mOhm @ 15A, 10V 2.2V @ 250µA 45 nC @ 10 V ±16V 2410 pF @ 15 V - 3.1W (Ta), 5.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4668DY-T1-E3

SI4668DY-T1-E3

MOSFET N-CH 25V 16.2A 8SO

Vishay Siliconix
2,862 -

RFQ

SI4668DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 16.2A (Tc) 4.5V, 10V 10.5mOhm @ 15A, 10V 2.6V @ 250µA 42 nC @ 10 V ±16V 1654 pF @ 15 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4682DY-T1-E3

SI4682DY-T1-E3

MOSFET N-CH 30V 16A 8SO

Vishay Siliconix
3,892 -

RFQ

SI4682DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 9.4mOhm @ 16A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 1595 pF @ 15 V - 2.5W (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4682DY-T1-GE3

SI4682DY-T1-GE3

MOSFET N-CH 30V 16A 8SO

Vishay Siliconix
2,873 -

RFQ

SI4682DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 9.4mOhm @ 16A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 1595 pF @ 15 V - 2.5W (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4684DY-T1-E3

SI4684DY-T1-E3

MOSFET N-CH 30V 16A 8SO

Vishay Siliconix
2,690 -

RFQ

SI4684DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 9.4mOhm @ 16A, 10V 1.5V @ 250µA 45 nC @ 10 V ±12V 2080 pF @ 15 V - 2.5W (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4684DY-T1-GE3

SI4684DY-T1-GE3

MOSFET N-CH 30V 16A 8SO

Vishay Siliconix
2,832 -

RFQ

SI4684DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 9.4mOhm @ 16A, 10V 1.5V @ 250µA 45 nC @ 10 V ±12V 2080 pF @ 15 V - 2.5W (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4688DY-T1-E3

SI4688DY-T1-E3

MOSFET N-CH 30V 8.9A 8SO

Vishay Siliconix
2,087 -

RFQ

SI4688DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.9A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1580 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4823DY-T1-E3

SI4823DY-T1-E3

MOSFET P-CH 20V 4.1A 8SO

Vishay Siliconix
3,942 -

RFQ

SI4823DY-T1-E3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.1A (Tc) 2.5V, 4.5V 108mOhm @ 3.3A, 4.5V 1.5V @ 250µA 12 nC @ 10 V ±12V 660 pF @ 10 V Schottky Diode (Isolated) 1.7W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4829DY-T1-E3

SI4829DY-T1-E3

MOSFET P-CH 20V 2A 8SO

Vishay Siliconix
3,447 -

RFQ

SI4829DY-T1-E3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Tc) 2.5V, 4.5V 215mOhm @ 2.5A, 4.5V 1.5V @ 250µA 8 nC @ 10 V ±12V 210 pF @ 10 V Schottky Diode (Isolated) 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4831BDY-T1-E3

SI4831BDY-T1-E3

MOSFET P-CH 30V 6.6A 8SO

Vishay Siliconix
3,408 -

RFQ

SI4831BDY-T1-E3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 6.6A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 625 pF @ 15 V Schottky Diode (Isolated) 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4831BDY-T1-GE3

SI4831BDY-T1-GE3

MOSFET P-CH 30V 6.6A 8SO

Vishay Siliconix
2,701 -

RFQ

SI4831BDY-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 6.6A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 625 pF @ 15 V Schottky Diode (Isolated) 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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