Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4890DY-T1-GE3

SI4890DY-T1-GE3

MOSFET N-CH 30V 11A 8-SOIC

Vishay Siliconix
2,705 -

RFQ

SI4890DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V 800mV @ 250µA (Min) 20 nC @ 5 V ±25V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4892DY-T1-E3

SI4892DY-T1-E3

MOSFET N-CH 30V 8.8A 8SO

Vishay Siliconix
3,330 -

RFQ

SI4892DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta) 4.5V, 10V 12mOhm @ 12.4A, 10V 800mV @ 250µA (Min) 10.5 nC @ 5 V ±20V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4892DY-T1-GE3

SI4892DY-T1-GE3

MOSFET N-CH 30V 8.8A 8SO

Vishay Siliconix
2,534 -

RFQ

SI4892DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta) 4.5V, 10V 12mOhm @ 12.4A, 10V 800mV @ 250µA (Min) 10.5 nC @ 5 V ±20V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5401DC-T1-GE3

SI5401DC-T1-GE3

MOSFET P-CH 20V 5.2A 1206-8

Vishay Siliconix
2,681 -

RFQ

SI5401DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.2A (Ta) 1.8V, 4.5V 32mOhm @ 5.2A, 4.5V 1V @ 250µA 25 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5402DC-T1-E3

SI5402DC-T1-E3

MOSFET N-CH 30V 4.9A 1206-8

Vishay Siliconix
3,803 -

RFQ

SI5402DC-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.9A (Ta) 4.5V, 10V 35mOhm @ 4.9A, 10V 1V @ 250µA (Min) 20 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5402DC-T1-GE3

SI5402DC-T1-GE3

MOSFET N-CH 30V 4.9A 1206-8

Vishay Siliconix
2,973 -

RFQ

SI5402DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.9A (Ta) 4.5V, 10V 35mOhm @ 4.9A, 10V 1V @ 250µA (Min) 20 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5404BDC-T1-GE3

SI5404BDC-T1-GE3

MOSFET N-CH 20V 5.4A 1206-8

Vishay Siliconix
3,456 -

RFQ

SI5404BDC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 2.5V, 4.5V 28mOhm @ 5.4A, 4.5V 1.5V @ 250µA 11 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3457CDV-T1-BE3

SI3457CDV-T1-BE3

P-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
6,000 -

RFQ

SI3457CDV-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta), 5.1A (Tc) 4.5V, 10V 74mOhm @ 4.1A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 15 V - 2W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2315BDS-T1-BE3

SI2315BDS-T1-BE3

P-CHANNEL 1.8-V (G-S) MOSFET

Vishay Siliconix
3,000 -

RFQ

SI2315BDS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.8V, 4.5V 50mOhm @ 3.85A, 4.5V 900mV @ 250µA 15 nC @ 4.5 V ±8V 715 pF @ 6 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5406DC-T1-GE3

SI5406DC-T1-GE3

MOSFET N-CH 12V 6.9A 1206-8

Vishay Siliconix
2,359 -

RFQ

SI5406DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 6.9A (Ta) 2.5V, 4.5V 20mOhm @ 6.9A, 4.5V 600mV @ 1.2mA (Min) 20 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5414DC-T1-GE3

SI5414DC-T1-GE3

MOSFET N-CH 20V 6A 1206-8

Vishay Siliconix
3,429 -

RFQ

SI5414DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 4.5V 17mOhm @ 9.9A, 4.5V 1.5V @ 250µA 41 nC @ 10 V ±12V 1500 pF @ 10 V - 2.5W (Ta), 6.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5441DC-T1-E3

SI5441DC-T1-E3

MOSFET P-CH 20V 3.9A 1206-8

Vishay Siliconix
2,067 -

RFQ

SI5441DC-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 2.5V, 4.5V 55mOhm @ 3.9A, 4.5V 1.4V @ 250µA 22 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5441DC-T1-GE3

SI5441DC-T1-GE3

MOSFET P-CH 20V 3.9A 1206-8

Vishay Siliconix
2,049 -

RFQ

SI5441DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 2.5V, 4.5V 55mOhm @ 3.9A, 4.5V 1.4V @ 250µA 22 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5443DC-T1-E3

SI5443DC-T1-E3

MOSFET P-CH 20V 3.6A 1206-8

Vishay Siliconix
2,045 -

RFQ

SI5443DC-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 65mOhm @ 3.6A, 4.5V 600mV @ 250µA (Min) 14 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5443DC-T1-GE3

SI5443DC-T1-GE3

MOSFET P-CH 20V 3.6A 1206-8

Vishay Siliconix
2,075 -

RFQ

SI5443DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 65mOhm @ 3.6A, 4.5V 600mV @ 250µA (Min) 14 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5445BDC-T1-GE3

SI5445BDC-T1-GE3

MOSFET P-CH 8V 5.2A 1206-8

Vishay Siliconix
2,243 -

RFQ

SI5445BDC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 5.2A (Ta) 1.8V, 4.5V 33mOhm @ 5.2A, 4.5V 1V @ 250µA 21 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5449DC-T1-E3

SI5449DC-T1-E3

MOSFET P-CH 30V 3.1A 1206-8

Vishay Siliconix
2,990 -

RFQ

SI5449DC-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 2.5V, 4.5V 85mOhm @ 3.1A, 4.5V 600mV @ 250µA (Min) 11 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5473DC-T1-GE3

SI5473DC-T1-GE3

MOSFET P-CH 12V 5.9A 1206-8

Vishay Siliconix
2,222 -

RFQ

SI5473DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5.9A (Ta) 1.8V, 4.5V 27mOhm @ 5.9A, 4.5V 1V @ 250µA 32 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5475BDC-T1-E3

SI5475BDC-T1-E3

MOSFET P-CH 12V 6A 1206-8

Vishay Siliconix
2,139 -

RFQ

SI5475BDC-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.8V, 4.5V 28mOhm @ 5.6A, 4.5V 1V @ 250µA 40 nC @ 8 V ±8V 1400 pF @ 6 V - 2.5W (Ta), 6.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5475BDC-T1-GE3

SI5475BDC-T1-GE3

MOSFET P-CH 12V 6A 1206-8

Vishay Siliconix
2,030 -

RFQ

SI5475BDC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 6A (Ta) 1.8V, 4.5V 28mOhm @ 5.6A, 4.5V 1V @ 250µA 40 nC @ 8 V ±8V 1400 pF @ 6 V - 2.5W (Ta), 6.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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