Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI5475DC-T1-E3

SI5475DC-T1-E3

MOSFET P-CH 12V 5.5A 1206-8

Vishay Siliconix
3,731 -

RFQ

SI5475DC-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5.5A (Ta) 1.8V, 4.5V 31mOhm @ 5.5A, 4.5V 450mV @ 1mA (Min) 29 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5475DC-T1-GE3

SI5475DC-T1-GE3

MOSFET P-CH 12V 5.5A 1206-8

Vishay Siliconix
2,565 -

RFQ

SI5475DC-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5.5A (Ta) 1.8V, 4.5V 31mOhm @ 5.5A, 4.5V 450mV @ 1mA (Min) 29 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5479DU-T1-GE3

SI5479DU-T1-GE3

MOSFET P-CH 12V 16A PPAK

Vishay Siliconix
3,633 -

RFQ

SI5479DU-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 16A (Tc) 1.8V, 4.5V 21mOhm @ 6.9A, 4.5V 1V @ 250µA 51 nC @ 8 V ±8V 1810 pF @ 6 V - 3.1W (Ta), 17.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5480DU-T1-GE3

SI5480DU-T1-GE3

MOSFET N-CH 30V 12A PPAK

Vishay Siliconix
2,469 -

RFQ

SI5480DU-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 16mOhm @ 7.2A, 10V 3V @ 250µA 34 nC @ 10 V ±20V 1230 pF @ 15 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5481DU-T1-GE3

SI5481DU-T1-GE3

MOSFET P-CH 20V 12A PPAK

Vishay Siliconix
3,447 -

RFQ

SI5481DU-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.8V, 4.5V 22mOhm @ 6.5A, 4.5V 1V @ 250µA 50 nC @ 8 V ±8V 1610 pF @ 10 V - 3.1W (Ta), 17.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5482DU-T1-GE3

SI5482DU-T1-GE3

MOSFET N-CH 30V 12A PPAK

Vishay Siliconix
3,828 -

RFQ

SI5482DU-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 15mOhm @ 7.4A, 10V 2V @ 250µA 51 nC @ 10 V ±12V 1610 pF @ 15 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5484DU-T1-GE3

SI5484DU-T1-GE3

MOSFET N-CH 20V 12A PPAK

Vishay Siliconix
2,800 -

RFQ

SI5484DU-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 16mOhm @ 7.6A, 4.5V 2V @ 250µA 55 nC @ 10 V ±12V 1600 pF @ 10 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5485DU-T1-GE3

SI5485DU-T1-GE3

MOSFET P-CH 20V 12A PPAK

Vishay Siliconix
2,516 -

RFQ

SI5485DU-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 25mOhm @ 5.9A, 4.5V 1.5V @ 250µA 42 nC @ 8 V ±12V 1100 pF @ 10 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5853CDC-T1-E3

SI5853CDC-T1-E3

MOSFET P-CH 20V 4A 1206-8

Vishay Siliconix
2,179 -

RFQ

SI5853CDC-T1-E3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Tc) 1.8V, 4.5V 104mOhm @ 2.5A, 4.5V 1V @ 250µA 11 nC @ 8 V ±8V 350 pF @ 10 V Schottky Diode (Isolated) 1.5W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5857DU-T1-GE3

SI5857DU-T1-GE3

MOSFET P-CH 20V 6A PPAK CHIPFET

Vishay Siliconix
3,349 -

RFQ

SI5857DU-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 4.5V 58mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17 nC @ 10 V ±12V 480 pF @ 10 V Schottky Diode (Isolated) 2.3W (Ta), 10.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5858DU-T1-GE3

SI5858DU-T1-GE3

MOSFET N-CH 20V 6A PPAK CHIPFET

Vishay Siliconix
2,206 -

RFQ

SI5858DU-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 1.8V, 4.5V 39mOhm @ 4.4A, 4.5V 1V @ 250µA 16 nC @ 8 V ±8V 520 pF @ 10 V Schottky Diode (Isolated) 2.3W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5913DC-T1-E3

SI5913DC-T1-E3

MOSFET P-CH 20V 4A 1206-8

Vishay Siliconix
2,984 -

RFQ

SI5913DC-T1-E3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Tc) 2.5V, 10V 84mOhm @ 3.7A, 10V 1.5V @ 250µA 12 nC @ 10 V ±12V 330 pF @ 10 V Schottky Diode (Isolated) 1.7W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI6404DQ-T1-E3

SI6404DQ-T1-E3

MOSFET N-CH 30V 8.6A 8TSSOP

Vishay Siliconix
2,301 -

RFQ

SI6404DQ-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.6A (Ta) 2.5V, 10V 9mOhm @ 11A, 10V 600mV @ 250µA (Min) 48 nC @ 4.5 V ±12V - - 1.08W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6404DQ-T1-GE3

SI6404DQ-T1-GE3

MOSFET N-CH 30V 8.6A 8TSSOP

Vishay Siliconix
2,552 -

RFQ

SI6404DQ-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.6A (Ta) 2.5V, 10V 9mOhm @ 11A, 10V 600mV @ 250µA (Min) 48 nC @ 4.5 V ±12V - - 1.08W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6413DQ-T1-E3

SI6413DQ-T1-E3

MOSFET P-CH 20V 7.2A 8TSSOP

Vishay Siliconix
3,859 -

RFQ

SI6413DQ-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.2A (Ta) 1.8V, 4.5V 10mOhm @ 8.8A, 4.5V 800mV @ 400µA 105 nC @ 5 V ±8V - - 1.05W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6413DQ-T1-GE3

SI6413DQ-T1-GE3

MOSFET P-CH 20V 7.2A 8TSSOP

Vishay Siliconix
3,638 -

RFQ

SI6413DQ-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 7.2A (Ta) 1.8V, 4.5V 10mOhm @ 8.8A, 4.5V 800mV @ 400µA 105 nC @ 5 V ±8V - - 1.05W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6443DQ-T1-E3

SI6443DQ-T1-E3

MOSFET P-CH 30V 7.3A 8TSSOP

Vishay Siliconix
2,614 -

RFQ

SI6443DQ-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7.3A (Ta) 4.5V, 10V 12mOhm @ 8.8A, 10V 3V @ 250µA 60 nC @ 5 V ±20V - - 1.05W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6465DQ-T1-E3

SI6465DQ-T1-E3

MOSFET P-CH 8V 8.8A 8TSSOP

Vishay Siliconix
2,157 -

RFQ

SI6465DQ-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 8.8A (Ta) 1.8V, 4.5V 12mOhm @ 8.8A, 4.5V 450mV @ 250µA (Min) 80 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6465DQ-T1-GE3

SI6465DQ-T1-GE3

MOSFET P-CH 8V 8.8A 8TSSOP

Vishay Siliconix
2,941 -

RFQ

SI6465DQ-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 8.8A (Ta) 1.8V, 4.5V 12mOhm @ 8.8A, 4.5V 450mV @ 250µA (Min) 80 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1499DH-T1-BE3

SI1499DH-T1-BE3

MOSFET P-CH 8V 1.6A/1.6A SC70-6

Vishay Siliconix
2,480 -

RFQ

SI1499DH-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 1.6A (Ta), 1.6A (Tc) - 78mOhm @ 2A, 4.5V 800mV @ 250µA 16 nC @ 4.5 V ±5V 650 pF @ 4 V - 2.5W (Ta), 2.78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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