Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI5402BDC-T1-E3

SI5402BDC-T1-E3

MOSFET N-CH 30V 4.9A 1206-8

Vishay Siliconix
3,737 -

RFQ

SI5402BDC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.9A (Ta) 4.5V, 10V 35mOhm @ 4.9A, 10V 3V @ 250µA 20 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5406DC-T1-E3

SI5406DC-T1-E3

MOSFET N-CH 12V 6.9A 1206-8

Vishay Siliconix
3,440 -

RFQ

SI5406DC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 6.9A (Ta) 2.5V, 4.5V 20mOhm @ 6.9A, 4.5V 600mV @ 1.2mA (Min) 20 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SUD08P06-155L-BE3

SUD08P06-155L-BE3

MOSFET P-CH 60V 8.2A DPAK

Vishay Siliconix
2,151 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 8.2A (Tc) 4.5V, 10V 155mOhm @ 5A, 10V 2V @ 250µA 19 nC @ 10 V ±20V 450 pF @ 25 V - 1.7W (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5424DC-T1-E3

SI5424DC-T1-E3

MOSFET N-CH 30V 6A 1206-8

Vishay Siliconix
3,989 -

RFQ

SI5424DC-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Tc) 4.5V, 10V 24mOhm @ 4.8A, 10V 2.3V @ 250µA 32 nC @ 10 V ±25V 950 pF @ 15 V - 2.5W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5433BDC-T1-E3

SI5433BDC-T1-E3

MOSFET P-CH 20V 4.8A 1206-8

Vishay Siliconix
3,624 -

RFQ

SI5433BDC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.8A (Ta) 1.8V, 4.5V 37mOhm @ 4.8A, 4.5V 1V @ 250µA 22 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5435BDC-T1-E3

SI5435BDC-T1-E3

MOSFET P-CH 30V 4.3A 1206-8

Vishay Siliconix
2,154 -

RFQ

SI5435BDC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 4.5V, 10V 45mOhm @ 4.3A, 10V 3V @ 250µA 24 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5445BDC-T1-E3

SI5445BDC-T1-E3

MOSFET P-CH 8V 5.2A 1206-8

Vishay Siliconix
3,899 -

RFQ

SI5445BDC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 5.2A (Ta) 1.8V, 4.5V 33mOhm @ 5.2A, 4.5V 1V @ 250µA 21 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRA62DP-T1-RE3

SIRA62DP-T1-RE3

MOSFET N-CH 30V 51.4A/80A PPAK

Vishay Siliconix
2,379 -

RFQ

SIRA62DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 51.4A (Ta), 80A (Tc) 4.5V, 10V 1.2mOhm @ 15A, 10V 2.2V @ 250µA 93 nC @ 10 V +16V, -12V 4460 pF @ 15 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ443EP-T1_GE3

SQJ443EP-T1_GE3

MOSFET P-CH 40V 40A PPAK SO-8

Vishay Siliconix
3,018 -

RFQ

SQJ443EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 29mOhm @ 18A, 10V 2.5V @ 250µA 57 nC @ 10 V ±20V 2030 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TA) Surface Mount
SI7806ADN-T1-E3

SI7806ADN-T1-E3

MOSFET N-CH 30V 9A PPAK1212-8

Vishay Siliconix
3,892 -

RFQ

SI7806ADN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 11mOhm @ 14A, 10V 3V @ 250µA 20 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4477DY-T1-GE3

SI4477DY-T1-GE3

MOSFET P-CH 20V 26.6A 8SO

Vishay Siliconix
2,358 -

RFQ

SI4477DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 26.6A (Tc) 2.5V, 4.5V 6.2mOhm @ 18A, 4.5V 1.5V @ 250µA 190 nC @ 10 V ±12V 4600 pF @ 10 V - 3W (Ta), 6.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5447DC-T1-E3

SI5447DC-T1-E3

MOSFET P-CH 20V 3.5A 1206-8

Vishay Siliconix
3,033 -

RFQ

SI5447DC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.8V, 4.5V 76mOhm @ 3.5A, 4.5V 450mV @ 250µA (Min) 10 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5463EDC-T1-E3

SI5463EDC-T1-E3

MOSFET P-CH 20V 3.8A 1206-8

Vishay Siliconix
3,468 -

RFQ

SI5463EDC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.8A (Ta) 1.8V, 4.5V 62mOhm @ 4A, 4.5V 450mV @ 250µA (Min) 15 nC @ 4.5 V ±12V - - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5473DC-T1-E3

SI5473DC-T1-E3

MOSFET P-CH 12V 5.9A 1206-8

Vishay Siliconix
2,240 -

RFQ

SI5473DC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5.9A (Ta) 1.8V, 4.5V 27mOhm @ 5.9A, 4.5V 1V @ 250µA 32 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5476DU-T1-E3

SI5476DU-T1-E3

MOSFET N-CH 60V 12A PPAK

Vishay Siliconix
2,795 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 34mOhm @ 4.6A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 1100 pF @ 30 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5480DU-T1-E3

SI5480DU-T1-E3

MOSFET N-CH 30V 12A PPAK

Vishay Siliconix
3,258 -

RFQ

SI5480DU-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 16mOhm @ 7.2A, 10V 3V @ 250µA 34 nC @ 10 V ±20V 1230 pF @ 15 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5481DU-T1-E3

SI5481DU-T1-E3

MOSFET P-CH 20V 12A PPAK

Vishay Siliconix
3,902 -

RFQ

SI5481DU-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.8V, 4.5V 22mOhm @ 6.5A, 4.5V 1V @ 250µA 50 nC @ 8 V ±8V 1610 pF @ 10 V - 3.1W (Ta), 17.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5482DU-T1-E3

SI5482DU-T1-E3

MOSFET N-CH 30V 12A PPAK

Vishay Siliconix
3,738 -

RFQ

SI5482DU-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 15mOhm @ 7.4A, 10V 2V @ 250µA 51 nC @ 10 V ±12V 1610 pF @ 15 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5484DU-T1-E3

SI5484DU-T1-E3

MOSFET N-CH 20V 12A PPAK

Vishay Siliconix
2,983 -

RFQ

SI5484DU-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 16mOhm @ 7.6A, 4.5V 2V @ 250µA 55 nC @ 10 V ±12V 1600 pF @ 10 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5485DU-T1-E3

SI5485DU-T1-E3

MOSFET P-CH 20V 12A PPAK

Vishay Siliconix
3,703 -

RFQ

SI5485DU-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 25mOhm @ 5.9A, 4.5V 1.5V @ 250µA 42 nC @ 8 V ±12V 1100 pF @ 10 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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