Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIJ438ADP-T1-GE3

SIJ438ADP-T1-GE3

MOSFET N-CH 40V 45.3A/169A PPAK

Vishay Siliconix
2,324 -

RFQ

SIJ438ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 45.3A (Ta), 169A(Tc) 4.5V, 10V 1.35mOhm @ 20A, 10V 2.4V @ 250µA 162 nC @ 10 V +20V, -16V 7800 pF @ 20 V - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ4153EY-T1_GE3

SQ4153EY-T1_GE3

MOSFET P-CHANNEL 12V 25A 8SOIC

Vishay Siliconix
3,642 -

RFQ

SQ4153EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 25A (Tc) 1.8V, 4.5V 8.32mOhm @ 14A, 4.5V 900mV @ 250µA 151 nC @ 4.5 V ±8V 11000 pF @ 6 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD19P06-60L_T4GE3

SQD19P06-60L_T4GE3

MOSFET P-CH 60V 20A TO252AA

Vishay Siliconix
3,238 -

RFQ

SQD19P06-60L_T4GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 55mOhm @ 19A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1490 pF @ 25 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD40020E_GE3

SQD40020E_GE3

MOSFET N-CH 40V 100A TO252AA

Vishay Siliconix
2,151 -

RFQ

SQD40020E_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.33mOhm @ 20A, 10V 3.5V @ 250µA 130 nC @ 10 V ±20V 8000 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD50034E_GE3

SQD50034E_GE3

MOSFET N-CH 60V 100A TO252AA

Vishay Siliconix
3,266 -

RFQ

SQD50034E_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.9mOhm @ 20A, 10V 3.5V @ 250µA 90 nC @ 10 V ±20V 6600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4470EY-T1_GE3

SQ4470EY-T1_GE3

MOSFET N-CH 60V 16A 8SO

Vishay Siliconix
2,616 -

RFQ

SQ4470EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 6V, 10V 12mOhm @ 6A, 10V 3.5V @ 250µA 68 nC @ 10 V ±20V 3165 pF @ 25 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4470EY-T1_BE3

SQ4470EY-T1_BE3

MOSFET N-CH 60V 16A 8SOIC

Vishay Siliconix
3,279 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 6V, 10V 12mOhm @ 6A, 10V 3.5V @ 250µA 68 nC @ 10 V ±20V 3165 pF @ 25 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR120TRPBF

IRLR120TRPBF

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
2,908 -

RFQ

IRLR120TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR120TRLPBF

IRLR120TRLPBF

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
2,891 -

RFQ

IRLR120TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR846BDP-T1-RE3

SIR846BDP-T1-RE3

MOSFET N-CH 100V 16.1A/65.8 PPAK

Vishay Siliconix
3,731 -

RFQ

SIR846BDP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 16.1A (Ta), 65.8 (Tc) 7.5V, 10V 8mOhm @ 15A, 10V 4V @ 250µA 52 nC @ 10 V ±20V 2440 pF @ 50 V - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3430DV-T1-BE3

SI3430DV-T1-BE3

MOSFET N-CH 100V 1.8A 6TSOP

Vishay Siliconix
2,970 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 1.8A (Ta) 6V, 10V 170mOhm @ 2.4A, 10V 4.2V @ 250µA 8.2 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQD25N06-22L_GE3

SQD25N06-22L_GE3

MOSFET N-CH 60V 25A TO252

Vishay Siliconix
3,139 -

RFQ

SQD25N06-22L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 22mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 1975 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7384DP-T1-E3

SI7384DP-T1-E3

MOSFET N-CH 30V 11A PPAK SO-8

Vishay Siliconix
3,878 -

RFQ

SI7384DP-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 8.5mOhm @ 18A, 10V 3V @ 250µA 18 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7403BDN-T1-E3

SI7403BDN-T1-E3

MOSFET P-CH 20V 8A PPAK1212-8

Vishay Siliconix
2,170 -

RFQ

SI7403BDN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 2.5V, 4.5V 74mOhm @ 5.1A, 4.5V 1V @ 250µA 15 nC @ 8 V ±8V 430 pF @ 10 V - 3.1W (Ta), 9.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7409ADN-T1-E3

SI7409ADN-T1-E3

MOSFET P-CH 30V 7A PPAK1212-8

Vishay Siliconix
3,215 -

RFQ

SI7409ADN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 2.5V, 4.5V 19mOhm @ 11A, 4.5V 1.5V @ 250µA 40 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7411DN-T1-E3

SI7411DN-T1-E3

MOSFET P-CH 20V 7.5A PPAK1212-8

Vishay Siliconix
3,567 -

RFQ

SI7411DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 1.8V, 4.5V 19mOhm @ 11.4A, 4.5V 1V @ 300µA 41 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7413DN-T1-E3

SI7413DN-T1-E3

MOSFET P-CH 20V 8.4A PPAK1212-8

Vishay Siliconix
2,187 -

RFQ

SI7413DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8.4A (Ta) 1.8V, 4.5V 15mOhm @ 13.2A, 4.5V 1V @ 400µA 51 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7448DP-T1-E3

SI7448DP-T1-E3

MOSFET N-CH 20V 13.4A PPAK SO-8

Vishay Siliconix
2,235 -

RFQ

SI7448DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 13.4A (Ta) 2.5V, 4.5V 6.5mOhm @ 22A, 4.5V 1.5V @ 250µA 50 nC @ 4.5 V ±12V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7459DP-T1-E3

SI7459DP-T1-E3

MOSFET P-CH 30V 13A PPAK SO-8

Vishay Siliconix
2,615 -

RFQ

SI7459DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 10V 6.8mOhm @ 22A, 10V 3V @ 250µA 170 nC @ 10 V ±25V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7462DP-T1-E3

SI7462DP-T1-E3

MOSFET N-CH 200V 2.6A PPAK SO-8

Vishay Siliconix
2,370 -

RFQ

SI7462DP-T1-E3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Ta) - 130mOhm @ 4.1A, 10V 4V @ 250µA 30 nC @ 10 V - - - - - Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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