Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIE800DF-T1-E3

SIE800DF-T1-E3

MOSFET N-CH 30V 50A 10POLARPAK

Vishay Siliconix
2,093 -

RFQ

SIE800DF-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.2mOhm @ 11A, 10V 3V @ 250µA 35 nC @ 10 V ±20V 1600 pF @ 15 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE806DF-T1-E3

SIE806DF-T1-E3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix
3,504 -

RFQ

SIE806DF-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.7mOhm @ 25A, 10V 2V @ 250µA 250 nC @ 10 V ±12V 13000 pF @ 15 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE820DF-T1-E3

SIE820DF-T1-E3

MOSFET N-CH 20V 50A 10POLARPAK

Vishay Siliconix
3,239 -

RFQ

SIE820DF-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 2.5V, 4.5V 3.5mOhm @ 18A, 4.5V 2V @ 250µA 143 nC @ 10 V ±12V 4300 pF @ 10 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE822DF-T1-E3

SIE822DF-T1-E3

MOSFET N-CH 20V 50A 10POLARPAK

Vishay Siliconix
3,684 -

RFQ

SIE822DF-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 3.4mOhm @ 18.3A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 4200 pF @ 10 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE830DF-T1-E3

SIE830DF-T1-E3

MOSFET N-CH 30V 50A 10POLARPAK

Vishay Siliconix
2,702 -

RFQ

SIE830DF-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) WFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.2mOhm @ 16A, 10V 2V @ 250µA 115 nC @ 10 V ±12V 5500 pF @ 15 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE832DF-T1-E3

SIE832DF-T1-E3

MOSFET N-CH 40V 50A 10POLARPAK

Vishay Siliconix
2,460 -

RFQ

SIE832DF-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 5.5mOhm @ 14A, 10V 3V @ 250µA 77 nC @ 10 V ±20V 3800 pF @ 20 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TN0200K-T1-E3

TN0200K-T1-E3

MOSFET N-CH 20V SOT23-3

Vishay Siliconix
2,192 -

RFQ

TN0200K-T1-E3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 730mA (Ta) - 400mOhm @ 600mA, 4.5V 1V @ 50µA 2 nC @ 4.5 V - - - - - Surface Mount
TN0201K-T1-E3

TN0201K-T1-E3

MOSFET N-CH 20V 420MA SOT23-3

Vishay Siliconix
3,579 -

RFQ

TN0201K-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 420mA (Ta) 4.5V, 10V 1Ohm @ 300mA, 10V 3V @ 250µA 1.5 nC @ 10 V ±20V - - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TP0101K-T1-E3

TP0101K-T1-E3

MOSFET P-CH 20V 0.58A SOT23-3

Vishay Siliconix
3,322 -

RFQ

TP0101K-T1-E3

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 580mA (Ta) - 650mOhm @ 580mA, 4.5V 1V @ 50µA 2.2 nC @ 4.5 V - - - - - Surface Mount
SUM40N10-30-E3

SUM40N10-30-E3

MOSFET N-CH 100V 40A TO263

Vishay Siliconix
3,872 -

RFQ

SUM40N10-30-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 6V, 10V 30mOhm @ 15A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 2400 pF @ 25 V - 3.75W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM40N15-38-E3

SUM40N15-38-E3

MOSFET N-CH 150V 40A TO263

Vishay Siliconix
3,395 -

RFQ

SUM40N15-38-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 40A (Tc) 6V, 10V 38mOhm @ 15A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 2500 pF @ 25 V - 3.75W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM47N10-24L-E3

SUM47N10-24L-E3

MOSFET N-CH 100V 47A TO263

Vishay Siliconix
3,360 -

RFQ

SUM47N10-24L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 24mOhm @ 40A, 10V 3V @ 250µA 60 nC @ 10 V ±20V 2400 pF @ 25 V - 3.75W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIRA50ADP-T1-RE3

SIRA50ADP-T1-RE3

MOSFET N-CH 40V 54.8A/219A PPAK

Vishay Siliconix
2,169 -

RFQ

SIRA50ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 54.8A (Ta), 219A (Tc) 4.5V, 10V 1.04mOhm @ 20A, 10V 2.2V @ 250µA 150 nC @ 10 V +20V, -16V 7300 pF @ 20 V - 6.25W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM50N06-16L-E3

SUM50N06-16L-E3

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,613 -

RFQ

SUM50N06-16L-E3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 16mOhm @ 20A, 10V 3V @ 250µA 40 nC @ 10 V - 1325 pF @ 25 V - 3.7W (Ta), 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TP0202K-T1-E3

TP0202K-T1-E3

MOSFET P-CH 30V 385MA SOT23-3

Vishay Siliconix
2,988 -

RFQ

TP0202K-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 385mA (Ta) 4.5V, 10V 1.4Ohm @ 500mA, 10V 3V @ 250µA 1 nC @ 10 V ±20V 31 pF @ 15 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TP0610KL-TR1-E3

TP0610KL-TR1-E3

MOSFET P-CH 60V 270MA TO226AA

Vishay Siliconix
3,098 -

RFQ

TP0610KL-TR1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 270mA (Ta) 4.5V, 10V 6Ohm @ 500mA, 10V 3V @ 250µA 3 nC @ 15 V ±20V - - 800mW (Ta) -55°C ~ 150°C (TJ) Through Hole
SISS72DN-T1-GE3

SISS72DN-T1-GE3

MOSFET N-CH 150V 7A/25.5A PPAK

Vishay Siliconix
3,330 -

RFQ

SISS72DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 7A (Ta), 25.5A (Tc) 10V 42mOhm @ 7A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 550 pF @ 75 V - 5.1W (Ta), 65.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRC18DP-T1-GE3

SIRC18DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix
3,816 -

RFQ

SIRC18DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.1mOhm @ 15A, 10V 2.4V @ 250µA 111 nC @ 10 V +20V, -16V 5060 pF @ 15 V Schottky Diode (Body) 54.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7315DN-T1-GE3

SI7315DN-T1-GE3

MOSFET P-CH 150V 8.9A PPAK1212-8

Vishay Siliconix
3,828 -

RFQ

SI7315DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 8.9A (Tc) 7.5V, 10V 315mOhm @ 2.4A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 880 pF @ 75 V - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIR108DP-T1-RE3

SIR108DP-T1-RE3

MOSFET N-CH 100V 12.4A/45A PPAK

Vishay Siliconix
3,537 -

RFQ

SIR108DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 12.4A (Ta), 45A (Tc) 7.5V, 10V 13.5mOhm @ 10A, 10V 3.6V @ 250µA 41.5 nC @ 10 V ±20V 2060 pF @ 50 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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