Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT20M11JVFR

APT20M11JVFR

MOSFET N-CH 200V 175A ISOTOP

Microchip Technology
2,547 -

RFQ

APT20M11JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 175A (Tc) 10V 11mOhm @ 500mA, 10V 4V @ 5mA 180 nC @ 10 V ±30V 21600 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT60M75JVR

APT60M75JVR

MOSFET N-CH 600V 62A ISOTOP

Microchip Technology
2,922 -

RFQ

APT60M75JVR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 62A (Tc) 10V 75mOhm @ 500mA, 10V 4V @ 5mA 1050 nC @ 10 V ±30V 19800 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APTM120DA30CT1G

APTM120DA30CT1G

MOSFET N-CH 1200V 31A SP1

Microchip Technology
2,969 -

RFQ

APTM120DA30CT1G

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 31A (Tc) 10V 360mOhm @ 25A, 10V 5V @ 2.5mA 560 nC @ 10 V ±30V 14560 pF @ 25 V - 657W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT30M19JVFR

APT30M19JVFR

MOSFET N-CH 300V 130A ISOTOP

Microchip Technology
2,079 -

RFQ

APT30M19JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 130A (Tc) 10V 19mOhm @ 500mA, 10V 4V @ 5mA 975 nC @ 10 V ±30V 21600 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT8015JVFR

APT8015JVFR

MOSFET N-CH 800V 44A ISOTOP

Microchip Technology
3,487 -

RFQ

APT8015JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) - 150mOhm @ 500mA, 10V 4V @ 5mA 285 nC @ 10 V - 17650 pF @ 25 V - - - Chassis Mount
APT10025JVR

APT10025JVR

MOSFET N-CH 1000V 34A ISOTOP

Microchip Technology
3,198 -

RFQ

APT10025JVR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 34A (Tc) - 250mOhm @ 500mA, 10V 4V @ 5mA 990 nC @ 10 V - 18000 pF @ 25 V - - - Chassis Mount
APL602J

APL602J

MOSFET N-CH 600V 43A ISOTOP

Microchip Technology
3,531 -

RFQ

APL602J

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 12V 125mOhm @ 21.5A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10025JVFR

APT10025JVFR

MOSFET N-CH 1000V 34A ISOTOP

Microchip Technology
2,059 -

RFQ

APT10025JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 34A (Tc) - 250mOhm @ 500mA, 10V 4V @ 5mA 990 nC @ 10 V - 18000 pF @ 25 V - - - Chassis Mount
APT20M38SVRG

APT20M38SVRG

MOSFET N-CH 200V 67A D3PAK

Microchip Technology
2,226 -

RFQ

APT20M38SVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 67A (Tc) 10V 38mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 6120 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Surface Mount
LND150N3-G

LND150N3-G

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology
3,351 -

RFQ

LND150N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
TN5325N3-G

TN5325N3-G

MOSFET N-CH 250V 215MA TO92-3

Microchip Technology
745 -

RFQ

TN5325N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 250 V 215mA (Ta) 4.5V, 10V 7Ohm @ 1A, 10V 2V @ 1mA - ±20V 110 pF @ 25 V - 740mW (Ta) - Through Hole
APTC60SKM24CT1G

APTC60SKM24CT1G

MOSFET N-CH 600V 95A SP1

Microchip Technology
3,704 -

RFQ

APTC60SKM24CT1G

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 95A (Tc) 10V 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300 nC @ 10 V ±20V 14400 pF @ 25 V Super Junction 462W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT8011JLL

APT8011JLL

MOSFET N-CH 800V 51A ISOTOP

Microchip Technology
2,343 -

RFQ

APT8011JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 51A (Tc) - 110mOhm @ 25.5A, 10V 5V @ 5mA 650 nC @ 10 V - 9480 pF @ 25 V - - - Chassis Mount
APT60M60JLL

APT60M60JLL

MOSFET N-CH 600V 70A ISOTOP

Microchip Technology
2,602 -

RFQ

APT60M60JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 60mOhm @ 35A, 10V 5V @ 5mA 289 nC @ 10 V ±30V 12630 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M38JFLL

APT50M38JFLL

MOSFET N-CH 500V 88A ISOTOP

Microchip Technology
3,980 -

RFQ

APT50M38JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 88A (Tc) - 38mOhm @ 44A, 10V 5V @ 5mA 270 nC @ 10 V - 12000 pF @ 25 V - - - Chassis Mount
APT10026JLL

APT10026JLL

MOSFET N-CH 1000V 30A ISOTOP

Microchip Technology
2,097 -

RFQ

APT10026JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) - 260mOhm @ 15A, 10V 5V @ 5mA 267 nC @ 10 V - 7114 pF @ 25 V - - - Chassis Mount
APT8011JFLL

APT8011JFLL

MOSFET N-CH 800V 51A ISOTOP

Microchip Technology
2,543 -

RFQ

APT8011JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 51A (Tc) - 125mOhm @ 25.5A, 10V 5V @ 5mA 650 nC @ 10 V - 9480 pF @ 25 V - - - Chassis Mount
APT10021JLL

APT10021JLL

MOSFET N-CH 1000V 37A ISOTOP

Microchip Technology
2,424 -

RFQ

APT10021JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 210mOhm @ 18.5A, 10V 5V @ 5mA 395 nC @ 10 V ±30V 9750 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10026JFLL

APT10026JFLL

MOSFET N-CH 1000V 30A ISOTOP

Microchip Technology
2,492 -

RFQ

APT10026JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) - 260mOhm @ 15A, 10V 5V @ 5mA 267 nC @ 10 V - 7114 pF @ 25 V - - - Chassis Mount
APT12031JFLL

APT12031JFLL

MOSFET N-CH 1200V 30A ISOTOP

Microchip Technology
2,458 -

RFQ

APT12031JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 30A (Tc) 10V 330mOhm @ 15A, 10V 5V @ 5mA 365 nC @ 10 V ±30V 9480 pF @ 25 V - 690AW (Tc) -55°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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