Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MSC035SMA070S

MSC035SMA070S

MOSFET N-CH 700V D3PAK

Microchip Technology
2,582 -

RFQ

MSC035SMA070S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 65A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 1mA 99 nC @ 20 V +23V, -10V 2010 pF @ 700 V - 206W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT38F80L

APT38F80L

MOSFET N-CH 800V 41A TO264

Microchip Technology
3,778 -

RFQ

APT38F80L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 41A (Tc) 10V 240mOhm @ 20A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8070 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT106N60LC6

APT106N60LC6

MOSFET N-CH 600V 106A TO264

Microchip Technology
3,453 -

RFQ

APT106N60LC6

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 106A (Tc) 10V 35mOhm @ 53A, 10V 3.5V @ 3.4mA 308 nC @ 10 V ±20V 8390 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT48M80L

APT48M80L

MOSFET N-CH 800V 49A TO264

Microchip Technology
3,987 -

RFQ

APT48M80L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 49A (Tc) 10V 200mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT28M120L

APT28M120L

MOSFET N-CH 1200V 29A TO264

Microchip Technology
2,308 -

RFQ

APT28M120L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 29A (Tc) 10V 530mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT94N60L2C3G

APT94N60L2C3G

MOSFET N-CH 600V 94A 264 MAX

Microchip Technology
2,740 -

RFQ

APT94N60L2C3G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 94A (Tc) 10V 35mOhm @ 60A, 10V 3.9V @ 5.4mA 640 nC @ 10 V ±20V 13600 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010JLLU2

APT5010JLLU2

MOSFET N-CH 500V 41A SOT227

Microchip Technology
2,791 -

RFQ

APT5010JLLU2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 96 nC @ 10 V ±30V 4360 pF @ 25 V - 378W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC015SMA070S

MSC015SMA070S

SICFET N-CH 700V 126A D3PAK

Microchip Technology
2,981 -

RFQ

MSC015SMA070S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 126A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +23V, -10V 4500 pF @ 700 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT10M11LVRG

APT10M11LVRG

MOSFET N-CH 100V 100A TO264

Microchip Technology
3,455 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 2.5mA 450 nC @ 10 V ±30V 10300 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8020JLL

APT8020JLL

MOSFET N-CH 800V 33A ISOTOP

Microchip Technology
2,172 -

RFQ

APT8020JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) 10V 200mOhm @ 16.5A, 10V 5V @ 2.5mA 195 nC @ 10 V ±30V 5200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M65JLL

APT50M65JLL

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology
2,165 -

RFQ

APT50M65JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 29A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC100SM70JCU2

MSC100SM70JCU2

SICFET N-CH 700V 124A SOT227

Microchip Technology
2,774 -

RFQ

MSC100SM70JCU2

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 124A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 365W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC100SM70JCU3

MSC100SM70JCU3

SICFET N-CH 700V 124A SOT227

Microchip Technology
3,708 -

RFQ

MSC100SM70JCU3

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 124A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 365W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M38JLL

APT50M38JLL

MOSFET N-CH 500V 88A ISOTOP

Microchip Technology
2,529 -

RFQ

APT50M38JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 88A (Tc) 10V 38mOhm @ 44A, 10V 5V @ 5mA 270 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APL502LG

APL502LG

MOSFET N-CH 500V 58A TO264

Microchip Technology
3,134 -

RFQ

APL502LG

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 15V 90mOhm @ 29A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 730W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP2535N3-G

TP2535N3-G

MOSFET P-CH 350V 86MA TO92-3

Microchip Technology
733 -

RFQ

TP2535N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 350 V 86mA (Tj) 4.5V, 10V 25Ohm @ 100mA, 10V 2.4V @ 1mA - ±20V 125 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
MIC94030YM4TR

MIC94030YM4TR

MOSFET P-CH 16V 1A SOT143

Microchip Technology
3,038 -

RFQ

MIC94030YM4TR

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 16 V 1A (Ta) - 450mOhm @ 100mA, 10V 1.4V @ 250µA - ±16V 100 pF @ 12 V - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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