Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT6013JLL

APT6013JLL

MOSFET N-CH 600V 39A ISOTOP

Microchip Technology
2,587 -

RFQ

APT6013JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 130mOhm @ 19.5A, 10V 5V @ 2.5mA 130 nC @ 10 V ±30V 5630 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT12057B2LLG

APT12057B2LLG

MOSFET N-CH 1200V 22A T-MAX

Microchip Technology
2,974 -

RFQ

APT12057B2LLG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 6200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT26M100JCU2

APT26M100JCU2

MOSFET N-CH 1000V 26A SOT227

Microchip Technology
3,111 -

RFQ

APT26M100JCU2

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT26M100JCU3

APT26M100JCU3

MOSFET N-CH 1000V 26A SOT227

Microchip Technology
2,631 -

RFQ

APT26M100JCU3

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT50M50L2LLG

APT50M50L2LLG

MOSFET N-CH 500V 89A 264 MAX

Microchip Technology
3,823 -

RFQ

APT50M50L2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 89A (Tc) - 50mOhm @ 44.5A, 10V 5V @ 5mA 200 nC @ 10 V - 10550 pF @ 25 V - - - Through Hole
2SJ604-ZJ-E1-AZ

2SJ604-ZJ-E1-AZ

2SJ604-ZJ-E1-AZ - SWITCHING P-CH

Renesas
662 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4V, 10V 30mOhm @ 23A, 10V 2.5V @ 1mA 63 nC @ 10 V ±20V 3300 pF @ 10 V - 1.5W (Ta), 70W (Tc) 150°C Surface Mount
2SK3714(0)-S12-AZ

2SK3714(0)-S12-AZ

2SK3714 - SWITCHING P-CHANNEL PO

Renesas
7,805 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 10V 13mOhm @ 25A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 3200 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C Through Hole
IQE013N04LM6CGATMA1

IQE013N04LM6CGATMA1

40V N-CH FET SOURCE-DOWN CG 3X3

Infineon Technologies
4,852 -

RFQ

IQE013N04LM6CGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 205A (Tc) 4.5V, 10V 1.35mOhm @ 20A, 10V 2V @ 51µA 8 nC @ 10 V ±20V 3900 pF @ 20 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IQE013N04LM6ATMA1

IQE013N04LM6ATMA1

MOSFET N-CH 40V 31A/205A 8TSON

Infineon Technologies
4,857 -

RFQ

IQE013N04LM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 205A (Tc) - 1.35mOhm @ 20A, 10V 2V @ 51µA 55 nC @ 10 V ±20V 3900 pF @ 20 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFP064N

AUIRFP064N

AUIRFP064 - 55V-60V N-CHANNEL AU

International Rectifier
6,588 -

RFQ

AUIRFP064N

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK1003DPP-E0#T2

RJK1003DPP-E0#T2

RJK1003DPP - N-CHANNEL MOSFET 10

Renesas
3,408 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 50A (Ta) 10V 11mOhm @ 25A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 4150 pF @ 10 V - 25W (Tc) 150°C Through Hole
AUIRFS8409

AUIRFS8409

MOSFET N-CH 40V 195A D2PAK

International Rectifier
10,156 -

RFQ

AUIRFS8409

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB9403L-F085

FDB9403L-F085

MOSFET N-CH 40V 110A D2PAK

Fairchild Semiconductor
3,408 -

RFQ

FDB9403L-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 1.2mOhm @ 80A, 10V 3V @ 250µA 245 nC @ 10 V ±20V 13500 pF @ 20 V - 333W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IRF6646TRPBF

IRF6646TRPBF

MOSFET N-CH 80V 12A DIRECTFET

Infineon Technologies
3,689 -

RFQ

IRF6646TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Ta), 68A (Tc) 10V 9.5mOhm @ 12A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2060 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NP82N10PUF-E1-AY

NP82N10PUF-E1-AY

NP82N10PUF-E1-AY - MOS FIELD EFF

Renesas
6,400 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 82A (Tc) 5.8V, 10V 15mOhm @ 41A, 10V 3.3V @ 250µA 96 nC @ 10 V ±20V 4350 pF @ 25 V - 1.8W (Ta), 150W (Tc) 175°C Surface Mount
NTP5860NG

NTP5860NG

SINGLE N-CHANNEL POWER MOSFET 60

onsemi
8,566 -

RFQ

NTP5860NG

Ficha técnica

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 10760 pF @ 25 V - 283W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK4065-DL-1EX

2SK4065-DL-1EX

2SK4065 - MOSFET N-CHANNEL 75V T

onsemi
3,140 -

RFQ

2SK4065-DL-1EX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Ta) - 6mOhm @ 50A, 10V - 220 nC @ 10 V - 12200 pF @ 20 V - 1.65W (Ta), 90W (Tc) 150°C (TJ) Surface Mount
FDP039N08B

FDP039N08B

N-CHANNEL POWERTRENCH MOSFET 80V

Fairchild Semiconductor
1,390 -

RFQ

FDP039N08B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FCA20N60-F109

FCA20N60-F109

DISCRETE MOSFET

onsemi
12,150 -

RFQ

FCA20N60-F109

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL1404STRLPBF

IRL1404STRLPBF

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
1,575 -

RFQ

IRL1404STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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