Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK5026DPP-E0#T2

RJK5026DPP-E0#T2

RJK5026DPP-E0#T2 - SILICON N CHA

Renesas
4,876 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.7Ohm @ 3A, 10V 4.5V @ 1mA 14 nC @ 10 V ±30V 440 pF @ 25 V - 28.5W (Tc) 150°C Through Hole
FDI038AN06A0

FDI038AN06A0

MOSFET N-CH 60V 17A/80A I2PAK

Fairchild Semiconductor
1,809 -

RFQ

FDI038AN06A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSB044N08NN3GXUMA1

BSB044N08NN3GXUMA1

MOSFET N-CH 80V 18A/90A 2WDSON

Infineon Technologies
4,817 -

RFQ

BSB044N08NN3GXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Ta), 90A (Tc) 10V 4.4mOhm @ 30A, 10V 3.5V @ 97µA 73 nC @ 10 V ±20V 5700 pF @ 40 V - 2.2W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
2SK2461-AZ

2SK2461-AZ

2SK2461 - SILICON N CHANNEL MOSF

Renesas
1,760 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4V, 10V 80mOhm @ 10A, 10V 2V @ 1mA 51 nC @ 10 V ±20V 1400 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C Through Hole
AUIRFS4310ZTRL

AUIRFS4310ZTRL

AUIRFS4310Z - 75V-100V N-CHANNEL

International Rectifier
108,457 -

RFQ

AUIRFS4310ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFP4409

AUIRFP4409

MOSFET N-CH 300V 38A TO247AC

International Rectifier
8,850 -

RFQ

AUIRFP4409

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS4115-7P

AUIRFS4115-7P

AUIRFS4115 - 120V-300V N-CHANNEL

Infineon Technologies
35,450 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPDD60R170CFD7XTMA1

IPDD60R170CFD7XTMA1

MOSFET N-CH 600V 19A HDSOP-10

Infineon Technologies
1,616 -

RFQ

IPDD60R170CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) - 170mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1016 pF @ 400 V - 137W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS4115TRL7PP

IRFS4115TRL7PP

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies
236 -

RFQ

IRFS4115TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N4351 TO-72 4L

2N4351 TO-72 4L

N-CHANNEL ENHANCEMENT MODE MOSFE

Linear Integrated Systems, Inc.
999 -

RFQ

2N4351 TO-72 4L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 25 V 20mA 10V 300Ohm @ 100µA, 10V 5V @ 10µA - ±30V - - 350mW (Ta) -55°C ~ 150°C (TJ) Through Hole
AUIRLS3034-7TRL

AUIRLS3034-7TRL

MOSFET N-CH 40V 240A D2PAK

International Rectifier
4,680 -

RFQ

AUIRLS3034-7TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1404S

AUIRF1404S

MOSFET N-CH 40V 75A D2PAK

International Rectifier
22,481 -

RFQ

AUIRF1404S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL40SC209

IRL40SC209

MOSFET N-CH 40V 478A D2PAK

Infineon Technologies
335 -

RFQ

IRL40SC209

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 478A (Tc) 4.5V, 10V 0.8mOhm @ 100A, 10V 2.4V @ 250µA 267 nC @ 4.5 V ±20V 15270 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA19N60

FQA19N60

MOSFET N-CH 600V 18.5A TO3PN

Fairchild Semiconductor
6,271 -

RFQ

FQA19N60

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 18.5A (Tc) 10V 380mOhm @ 9.3A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
SST213 SOT-143 4L

SST213 SOT-143 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
1,786 -

RFQ

SST213 SOT-143 4L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SST213 Active N-Channel MOSFET (Metal Oxide) 10 V 50mA (Ta) 5V, 25V 50Ohm @ 1mA, 10V 1.5V @ 1µA - +25V, -15V - - 300mW (Ta) -55°C ~ 125°C (TJ) Surface Mount
BSC070N10LS5ATMA1

BSC070N10LS5ATMA1

MOSFET N-CH 100V 14A/79A TDSON

Infineon Technologies
2,219 -

RFQ

BSC070N10LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 79A (Tc) 4.5V, 10V 7mOhm @ 40A, 10V 2.3V @ 49µA 20 nC @ 4.5 V ±20V 2700 pF @ 50 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC028N06NSATMA1

BSC028N06NSATMA1

MOSFET N-CH 60V 23A/100A TDSON

Infineon Technologies
2,755 -

RFQ

BSC028N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Ta), 100A (Tc) 6V, 10V 2.8mOhm @ 50A, 10V 2.8V @ 50µA 37 nC @ 10 V ±20V 2700 pF @ 30 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
P3M06300T3

P3M06300T3

SICFET N-CH 650V 9A TO-220-3

PN Junction Semiconductor
2,000 -

RFQ

P3M06300T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 9A 15V 500mOhm @ 4.5A, 15V 2.2V @ 5mA - +20V, -8V - - 35W -55°C ~ 175°C (TJ) Through Hole
P3M06300D5

P3M06300D5

SICFET N-CH 650V 9A DFN5*6

PN Junction Semiconductor
1,000 -

RFQ

P3M06300D5

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 9A 15V 500mOhm @ 4.5A, 15V 2.2V @ 5mA - +20V, -8V - - 26W -55°C ~ 175°C (TJ) Surface Mount
2SK3353-AZ

2SK3353-AZ

2SK3353 - N-CHANNEL POWER MOSFET

Renesas
3,289 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 82A (Tc) 4V, 10V 9.5mOhm @ 41A, 10V 2.5V @ 1mA 90 nC @ 10 V ±20V 4650 pF @ 10 V - 1.5W (Ta), 95W (Tc) 150°C Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário