Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
P3M06300D8

P3M06300D8

SICFET N-CH 650V 9A DFN8*8

PN Junction Semiconductor
200 -

RFQ

P3M06300D8

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 9A 15V 500mOhm @ 4.5A, 15V 2.2V @ 5mA - +20V, -8V - - 32W -55°C ~ 175°C (TJ) Surface Mount
GPI65010DF56

GPI65010DF56

GANFET N-CH 650V 10A DFN 5X6

GaNPower
118 -

RFQ

GPI65010DF56

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 10A 6V - 1.4V @ 3.5mA 2.6 nC @ 6 V +7.5V, -12V 90 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
BSC080N12LSGATMA1

BSC080N12LSGATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
4,914 -

RFQ

BSC080N12LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 12A (Ta), 99A (Tc) 4.5V, 10V 8mOhm @ 50A, 10V 2.4V @ 112µA 79 nC @ 10 V ±20V 7400 pF @ 60 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3805STRLPBF

IRF3805STRLPBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
690 -

RFQ

IRF3805STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
P3M173K0K3

P3M173K0K3

SICFET N-CH 1700V 4A TO-247-3

PN Junction Semiconductor
1,000 -

RFQ

P3M173K0K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A 15V 3.6Ohm @ 0.6A, 15V 2.2V @ 0.6mA (Typ) - +19V, -8V - - 63W -55°C ~ 175°C (TJ) Through Hole
P3M173K0T3

P3M173K0T3

SICFET N-CH 1700V 4A TO-220-3

PN Junction Semiconductor
275 -

RFQ

P3M173K0T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A 15V 2.6Ohm @ 0.6A, 15V 2.2V @ 0.6mA (Typ) - +19V, -8V - - 75W -55°C ~ 175°C (TJ) Through Hole
RJK0601DPN-E0#T2

RJK0601DPN-E0#T2

RJK0601DPN - N-CHANNEL MOSFET 60

Renesas
1,640 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 110A (Ta) 10V 3.1mOhm @ 55A, 10V 4V @ 1mA 141 nC @ 10 V ±20V 10000 pF @ 10 V - 200W (Tc) 150°C Through Hole
IPB60R160C6ATMA1

IPB60R160C6ATMA1

MOSFET N-CH 600V 23.8A D2PAK

Infineon Technologies
1,000 -

RFQ

IPB60R160C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V 3.5V @ 750µA 75 nC @ 10 V ±20V 1660 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPC313N10N3RX1SA2

IPC313N10N3RX1SA2

TRENCH >=100V

Infineon Technologies
7,784 -

RFQ

IPC313N10N3RX1SA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB60R199CPATMA1

IPB60R199CPATMA1

MOSFET N-CH 650V 16A TO263-3

Infineon Technologies
537 -

RFQ

IPB60R199CPATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT60R150G7XTMA1

IPT60R150G7XTMA1

MOSFET N-CH 650V 17A 8HSOF

Infineon Technologies
1,071 -

RFQ

IPT60R150G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 150mOhm @ 5.3A, 10V 4V @ 260µA 23 nC @ 10 V ±20V 902 pF @ 400 V - 106W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD95R450P7ATMA1

IPD95R450P7ATMA1

MOSFET N-CH 950V 14A TO252-3

Infineon Technologies
2,481 -

RFQ

IPD95R450P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 14A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 35 nC @ 10 V ±20V 1053 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT60R102G7E8236XTMA1

IPT60R102G7E8236XTMA1

HIGH POWER_NEW

Infineon Technologies
6,748 -

RFQ

IPT60R102G7E8236XTMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2N7000,126

2N7000,126

MOSFET N-CH 60V 300MA TO92-3

NXP USA Inc.
2,012 -

RFQ

2N7000,126

Ficha técnica

Tape & Box (TB) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Tc) 4.5V, 10V 5Ohm @ 500mA, 10V 2V @ 1mA - ±30V 40 pF @ 10 V - 830mW (Ta) -55°C ~ 150°C (TJ) Through Hole
PMN50XP,165

PMN50XP,165

MOSFET P-CH 20V 4.8A 6TSOP

NXP USA Inc.
3,222 -

RFQ

PMN50XP,165

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.8A (Tc) 2.5V, 4.5V 60mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±12V 1020 pF @ 20 V - 2.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PH9025L,115

PH9025L,115

MOSFET N-CH 25V 66A LFPAK56

NXP USA Inc.
2,073 -

RFQ

PH9025L,115

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 66A (Tc) 4.5V, 10V 9mOhm @ 10A, 10V 2.15V @ 1mA 12.8 nC @ 4.5 V ±20V 1414 pF @ 30 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHB119NQ06T,118

PHB119NQ06T,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.
2,699 -

RFQ

PHB119NQ06T,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.1mOhm @ 25A, 10V 4V @ 1mA 53 nC @ 10 V ±20V 2820 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB23NQ10LT,118

PHB23NQ10LT,118

MOSFET N-CH 100V 23A D2PAK

NXP USA Inc.
3,274 -

RFQ

PHB23NQ10LT,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 5V, 10V 72mOhm @ 10A, 10V 2V @ 1mA 49 nC @ 10 V ±15V 1704 pF @ 25 V - 98W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N7002T,215

2N7002T,215

MOSFET N-CH 60V 300MA TO236AB

NXP USA Inc.
2,275 -

RFQ

2N7002T,215

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±20V 40 pF @ 10 V - 830mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PH1875L,115

PH1875L,115

MOSFET N-CH 75V 45.8A LFPAK56

NXP USA Inc.
3,553 -

RFQ

PH1875L,115

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 45.8A (Tc) 4.5V, 10V 16.5mOhm @ 20A, 10V 2V @ 1mA 33.4 nC @ 5 V ±15V 2600 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário