Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MMIX1F360N15T2

MMIX1F360N15T2

MOSFET N-CH 150V 235A 24SMPD

IXYS
2,224 -

RFQ

MMIX1F360N15T2

Ficha técnica

Tube GigaMOS™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 235A (Tc) 10V 4.4mOhm @ 100A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 680W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT50M85JVFR

APT50M85JVFR

MOSFET N-CH 500V 50A ISOTOP

Microchip Technology
2,370 -

RFQ

APT50M85JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) - 85mOhm @ 500mA, 10V 4V @ 1mA 535 nC @ 10 V - 10800 pF @ 25 V - - - Chassis Mount
APT8014L2FLLG

APT8014L2FLLG

MOSFET N-CH 800V 52A 264 MAX

Microchip Technology
3,180 -

RFQ

APT8014L2FLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 52A (Tc) - 160mOhm @ 26A, 10V 5V @ 5mA 285 nC @ 10 V - 7238 pF @ 25 V - - - Through Hole
APT10035JFLL

APT10035JFLL

MOSFET N-CH 1000V 25A ISOTOP

Microchip Technology
2,789 -

RFQ

APT10035JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 25A (Tc) - 370mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V - 5185 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M75JFLL

APT50M75JFLL

MOSFET N-CH 500V 51A ISOTOP

Microchip Technology
2,407 -

RFQ

APT50M75JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 51A (Tc) - 75mOhm @ 25.5A, 10V 5V @ 2.5mA 125 nC @ 10 V - 5590 pF @ 25 V - - - Chassis Mount
IXTK20N150

IXTK20N150

MOSFET N-CH 1500V 20A TO264

IXYS
3,665 -

RFQ

IXTK20N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 20A (Tc) 10V 1Ohm @ 10A, 10V 4.5V @ 1mA 215 nC @ 10 V ±30V 7800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN210N30P3

IXFN210N30P3

MOSFET N-CH 300V 192A SOT227B

IXYS
3,106 -

RFQ

IXFN210N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 192A (Tc) 10V 14.5mOhm @ 105A, 10V 5V @ 8mA 268 nC @ 10 V ±20V 16200 pF @ 25 V - 1500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT19M120J

APT19M120J

MOSFET N-CH 1200V 19A ISOTOP

Microchip Technology
2,533 -

RFQ

APT19M120J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 19A (Tc) 10V 530mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MMIX1F210N30P3

MMIX1F210N30P3

MOSFET N-CH 300V 108A 24SMPD

IXYS
3,349 -

RFQ

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 108A (Tc) - 16mOhm @ 105A, 10V 5V @ 8mA - - 16200 pF @ 25 V - - - Surface Mount
S2M0025120D

S2M0025120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions
3,143 -

RFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tj) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) Through Hole
S2M0025120K

S2M0025120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions
3,671 -

RFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 130 nC @ 20 V +25V, -10V 4402 pF @ 1000 V - 446W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN38N100Q2

IXFN38N100Q2

MOSFET N-CH 1000V 38A SOT-227

IXYS
2,925 -

RFQ

IXFN38N100Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 38A (Tc) 10V 250mOhm @ 19A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 7200 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN180N20

IXFN180N20

MOSFET N-CH 200V 180A SOT-227B

IXYS
3,610 -

RFQ

IXFN180N20

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 180A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 8mA 660 nC @ 10 V ±20V 22000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT8014L2LLG

APT8014L2LLG

MOSFET N-CH 800V 52A 264 MAX

Microchip Technology
3,278 -

RFQ

APT8014L2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 52A (Tc) - 140mOhm @ 26A, 10V 5V @ 5mA 285 nC @ 10 V - 7238 pF @ 25 V - - - Through Hole
IXFN44N80

IXFN44N80

MOSFET N-CH 800V 44A SOT-227B

IXYS
3,557 -

RFQ

IXFN44N80

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 165mOhm @ 500mA, 10V 4.5V @ 8mA 380 nC @ 10 V ±20V 10000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT6017JFLL

APT6017JFLL

MOSFET N-CH 600V 31A ISOTOP

Microchip Technology
3,953 -

RFQ

APT6017JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) - 170mOhm @ 15.5A, 10V 5V @ 2.5mA 100 nC @ 10 V - 4500 pF @ 25 V - - - Chassis Mount
APT12080JVFR

APT12080JVFR

MOSFET N-CH 1200V 15A ISOTOP

Microchip Technology
3,095 -

RFQ

APT12080JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 15A (Tc) - 800mOhm @ 7.5A, 10V 4V @ 2.5mA 485 nC @ 10 V - 7800 pF @ 25 V - - - Chassis Mount
IXFN26N100P

IXFN26N100P

MOSFET N-CH 1000V 23A SOT-227B

IXYS
3,617 -

RFQ

IXFN26N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 390mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT6010JFLL

APT6010JFLL

MOSFET N-CH 600V 47A ISOTOP

Microchip Technology
2,798 -

RFQ

APT6010JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) - 100mOhm @ 23.5A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Chassis Mount
APT10035JLL

APT10035JLL

MOSFET N-CH 1000V 25A ISOTOP

Microchip Technology
3,139 -

RFQ

APT10035JLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 25A (Tc) 10V 350mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V ±30V 5185 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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