Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMF6808N

FDMF6808N

DRMOS MODULE

onsemi
3,000 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
AUIRFS4010-7P

AUIRFS4010-7P

AUIRFS4010 - 120V-300V N-CHANNEL

Infineon Technologies
894 -

RFQ

AUIRFS4010-7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) - 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RQA0002DNSTB-E

RQA0002DNSTB-E

RQA0002DNS - N CHANNEL MOSFET

Renesas
9,270 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 16 V 3.8A (Ta) - - 750mV @ 1mA - ±5V 102 pF @ 0 V - 15W (Tc) 150°C Surface Mount
FCH35N60

FCH35N60

MOSFET N-CH 600V 35A TO247-3

Fairchild Semiconductor
2,501 -

RFQ

FCH35N60

Ficha técnica

Bulk SuperMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 98mOhm @ 17.5A, 10V 5V @ 250µA 181 nC @ 10 V ±30V 6640 pF @ 25 V - 312.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SD214DE TO-72 4L

SD214DE TO-72 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
821 -

RFQ

Bulk SD214DE Active N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 5V, 25V 45Ohm @ 1mA, 10V 1.5V @ 1µA - ±40V - - 300mW (Ta) -55°C ~ 125°C (TJ) Through Hole
FCH170N60

FCH170N60

MOSFET N-CH 600V 22A TO247-3

Fairchild Semiconductor
480 -

RFQ

FCH170N60

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 170mOhm @ 11A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2860 pF @ 380 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC007N04LS6ATMA1

BSC007N04LS6ATMA1

MOSFET N-CH 40V 100A TDSON-8-6

Infineon Technologies
11,073 -

RFQ

BSC007N04LS6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 381A (Tc) 4.5V, 10V 0.7mOhm @ 50A, 10V 2.3V @ 250µA 94 nC @ 4.5 V ±20V 8400 pF @ 20 V - 188W -55°C ~ 175°C (TJ) Surface Mount
BSC110N15NS5ATMA1

BSC110N15NS5ATMA1

MOSFET N-CH 150V 76A TDSON

Infineon Technologies
2,100 -

RFQ

BSC110N15NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Tc) 8V, 10V 11mOhm @ 38A, 10V 4.6V @ 91µA 35 nC @ 10 V ±20V 2770 pF @ 75 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTBS2D7N06M7

NTBS2D7N06M7

POWER MOSFET, N-CHANNEL, STANDAR

onsemi
1,611 -

RFQ

NTBS2D7N06M7

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6655 pF @ 30 V - 176W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDB029N06

FDB029N06

MOSFET N-CH 60V 120A D2PAK

Fairchild Semiconductor
5,992 -

RFQ

FDB029N06

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.1mOhm @ 75A, 10V 4.5V @ 250µA 151 nC @ 10 V ±20V 9815 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC120N04S6L005ATMA1

IAUC120N04S6L005ATMA1

IAUC120N04S6L005ATMA1

Infineon Technologies
5,000 -

RFQ

IAUC120N04S6L005ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tj) 4.5V, 10V 0.55mOhm @ 60A, 10V 2V @ 130µA 177 nC @ 10 V ±16V 11203 pF @ 25 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL0150N60

FDBL0150N60

FDBL0150N60 - N-CHANNEL POWERTRE

Fairchild Semiconductor
2,500 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IPDD60R125CFD7XTMA1

IPDD60R125CFD7XTMA1

MOSFET N-CH 600V 27A HDSOP-10

Infineon Technologies
861 -

RFQ

IPDD60R125CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) - 125mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1329 pF @ 400 V - 176W (Tc) -55°C ~ 150°C (TJ) Surface Mount
P3M171K0T3

P3M171K0T3

SICFET N-CH 1700V 6A TO-220-3

PN Junction Semiconductor
300 -

RFQ

P3M171K0T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 100W -55°C ~ 175°C (TJ) Through Hole
SD215DE TO-72 4L

SD215DE TO-72 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
909 -

RFQ

SD215DE TO-72 4L

Ficha técnica

Bulk SD215 Active N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 5V, 25V 45Ohm @ 1mA, 10V 1.5V @ 1µA - +30V, -25V - - 300mW (Ta) -55°C ~ 125°C (TJ) Through Hole
IPB020N08N5ATMA1

IPB020N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK

Infineon Technologies
395 -

RFQ

IPB020N08N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.8V @ 208µA 166 nC @ 10 V ±20V 12100 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IST006N04NM6AUMA1

IST006N04NM6AUMA1

MOSFET N-CH 40V 58A/475A HSOF-5

Infineon Technologies
790 -

RFQ

IST006N04NM6AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 6 Active N-Channel MOSFET (Metal Oxide) - 58A (Ta), 475A (Tc) 6V, 10V 600mOhm @ 100A, 10V 3.3V @ 250µA 178 nC @ 10 V ±20V 8800 pF @ 20 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IST007N04NM6AUMA1

IST007N04NM6AUMA1

MOSFET N-CH 40V 54A/440A HSOF-5

Infineon Technologies
700 -

RFQ

IST007N04NM6AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 6 Active N-Channel MOSFET (Metal Oxide) - 54A (Ta), 440A (Tc) 6V, 10V 700mOhm @ 100A, 10V 3.3V @ 250µA 152 nC @ 10 V ±20V 7900 pF @ 20 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUA250N04S6N006AUMA1

IAUA250N04S6N006AUMA1

MOSFET_(20V 40V) PG-HSOF-5

Infineon Technologies
130 -

RFQ

IAUA250N04S6N006AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 450A (Tj) 7V, 10V 0.64mOhm @ 100A, 10V 3V @ 145µA 169 nC @ 10 V ±20V 11064 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK6013DPP-E0#T2

RJK6013DPP-E0#T2

RJK6013DPP-E0#T2 - SILICON N CHA

Renesas
2,328 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 700mOhm @ 5.5A, 10V 4.5V @ 1mA 37.5 nC @ 10 V ±30V 1450 pF @ 25 V - 30W (Tc) 150°C Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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