| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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                    STP15N65M5MOSFET N CH 650V 11A TO220 STMicroelectronics |  
                1,000 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±25V | 810 pF @ 100 V | - | 125W (Tc) | 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    NVHL050N65S3HFMOSFET N-CH 650V 58A TO247-3 onsemi |  
                100 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | Automotive, AEC-Q101, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 119 nC @ 10 V | ±30V | 4880 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
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                    TK31Z60X,S1FX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |  
                2,553 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C | Through Hole | 
                     
                    
                     
                     
                    
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                    NTHLD040N65S3HFMOSFET N-CH 650V 65A TO247 onsemi |  
                2,685 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 159 nC @ 10 V | ±30V | 5945 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    STW58N60DM2AGMOSFET N-CH 600V 50A TO247 STMicroelectronics |  
                2,523 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±25V | 4100 pF @ 100 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
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                    STP7N95K3MOSFET N-CH 950V 7.2A TO220-3 STMicroelectronics |  
                320 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | SuperMESH3™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 7.2A (Tc) | 10V | 1.35Ohm @ 3.6A, 10V | 5V @ 100µA | 34 nC @ 10 V | ±30V | 1031 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    SPW35N60C3FKSA1MOSFET N-CH 650V 34.6A TO247-3 Infineon Technologies |  
                3,156 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34.6A (Tc) | 10V | 100mOhm @ 21.9A, 10V | 3.9V @ 1.9mA | 200 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IMZA65R107M1HXKSA1MOSFET 650V NCH SIC TRENCH Infineon Technologies |  
                307 | - | 
                
                    RFQ | 
                    
                   Tube | - | Active | - | - | - | 20A (Tc) | - | - | - | - | - | - | - | - | - | - | |
                     
                    
                     
                     
                    
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                    APT34F60BMOSFET N-CH 600V 36A TO247 Microchip Technology |  
                3,422 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
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                    APT34M60SMOSFET N-CH 600V 36A D3PAK Microchip Technology |  
                2,876 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
                 | 
				
                    IMZA65R072M1HXKSA1MOSFET 650V NCH SIC TRENCH Infineon Technologies |  
                288 | - | 
                
                    RFQ | 
                    
                   Tube | - | Active | - | - | - | 28A (Tc) | - | - | - | - | - | - | - | - | - | - | |
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                    TK62Z60X,S1FX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |  
                2,802 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 40mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | Through Hole | 
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                    APT5010LFLLGMOSFET N-CH 500V 46A TO264 Microchip Technology |  
                3,811 | - | 
                
                    RFQ | 
                    
                
                  
                    
                
                     Ficha técnica  | 
				 
                Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IXFR64N50PMOSFET N-CH 500V 35A ISOPLUS247 IXYS |  
                3,533 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 35A (Tc) | 10V | 95mOhm @ 32A, 10V | 5.5V @ 8mA | 150 nC @ 10 V | ±30V | 8700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    NTHL033N65S3HFMOSFET N-CH 650V 70A TO247-3 onsemi |  
                3,103 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 2.5mA | 188 nC @ 10 V | ±30V | 6720 pF @ 400 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    APT7F120BMOSFET N-CH 1200V 7A TO247 Microchip Technology |  
                3,635 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 7A (Tc) | 10V | 2.9Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
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                    MSC040SMA120SSICFET N-CH 1200V 64A TO268 Microchip Technology |  
                2,862 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 303W | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    IXFX20N120PMOSFET N-CH 1200V 20A PLUS247-3 IXYS |  
                2,775 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 193 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
                 | 
				
                    APT1201R2BLLGMOSFET N-CH 1200V 12A TO247 Microchip Technology |  
                3,474 | - | 
                
                    RFQ | 
                    
                   Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 1.2Ohm @ 6A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
                     
                    
                     
                     
                    
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                    IXFL100N50PMOSFET N-CH 500V 70A ISOPLUS264 IXYS |  
                2,885 | - | 
                
                    RFQ | 
                    
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 70A (Tc) | 10V | 52mOhm @ 50A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±30V | 20000 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |