Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SFI9Z14TU

SFI9Z14TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,000 -

RFQ

SFI9Z14TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 3.4A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 3.8W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1733-AZ

2SK1733-AZ

N-CHANNEL SMALL SIGNAL MOSFET

onsemi
2,500 -

RFQ

2SK1733-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFS720B

IRFS720B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,317 -

RFQ

IRFS720B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tj) 10V 1.75Ohm @ 1.65A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 600 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2158-L-A

2SK2158-L-A

N-CHANNEL MOSFET

Renesas Electronics America Inc
2,150 -

RFQ

2SK2158-L-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQU1N50TU

FQU1N50TU

MOSFET N-CH 500V 1.1A IPAK

Fairchild Semiconductor
2,056 -

RFQ

FQU1N50TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.1A (Tc) 10V 9Ohm @ 550mA, 10V 5V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR220BTM

IRFR220BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,760 -

RFQ

IRFR220BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Tc) 10V 800mOhm @ 2.3A, 10V 4V @ 250µA 16 nC @ 10 V ±30V 390 pF @ 25 V - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS820B

IRFS820B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,853 -

RFQ

IRFS820B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tj) 10V 2.6Ohm @ 1.25A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 610 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
PH6530AL115

PH6530AL115

POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.
4,500 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V - - - - - - - - - - Surface Mount
SSS2N60B

SSS2N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,094 -

RFQ

SSS2N60B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tj) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTP20N06V

MTP20N06V

N-CHANNEL POWER MOSFET

onsemi
2,410 -

RFQ

MTP20N06V

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SSR1N60BTM-WS

SSR1N60BTM-WS

MOSFET N-CH 600V 900MA DPAK

Fairchild Semiconductor
2,350 -

RFQ

SSR1N60BTM-WS

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 900mA (Tc) 10V 12Ohm @ 450mA, 10V 4V @ 250µA 7.7 nC @ 10 V ±30V 215 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFD3055

RFD3055

MOSFET N-CH 60V 12A IPAK

Fairchild Semiconductor
2,302 -

RFQ

RFD3055

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 150mOhm @ 12A, 10V 4V @ 250µA 23 nC @ 20 V ±20V 300 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76609D3ST_NL

HUFA76609D3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,281 -

RFQ

HUFA76609D3ST_NL

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V 3V @ 250µA 16 nC @ 10 V ±16V 425 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MTP1N50E

MTP1N50E

N-CHANNEL POWER MOSFET

onsemi
2,150 -

RFQ

MTP1N50E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SFI9Z24TU

SFI9Z24TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,000 -

RFQ

SFI9Z24TU

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 10V 280mOhm @ 4.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 3.8W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL610A

IRL610A

MOSFET N-CH 200V 3.3A TO220-3

Fairchild Semiconductor
1,744 -

RFQ

IRL610A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 5V 1.5Ohm @ 1.65A, 5V 2V @ 250µA 9 nC @ 5 V ±20V 240 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
CPH6443-TL-H

CPH6443-TL-H

MOSFET N-CH 35V 6A 6CPH

Sanyo
9,000 -

RFQ

CPH6443-TL-H

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 35 V 6A (Ta) 4V, 10V 37mOhm @ 3A, 10V - 10 nC @ 10 V ±20V 470 pF @ 20 V - 1.6W (Ta) 150°C (TJ) Surface Mount
MMSF1310R2

MMSF1310R2

N-CHANNEL POWER MOSFET

onsemi
7,430 -

RFQ

MMSF1310R2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTP15N06AV

NTP15N06AV

NFET T0220 60V 0.12R

onsemi
6,800 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
ECH8411-TL-E

ECH8411-TL-E

MOSFET N-CH 20V 9A 8ECH

onsemi
6,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) - 16mOhm @ 4A, 4V - 21 nC @ 4 V - 1740 pF @ 10 V - 1.4W (Ta) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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