Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPB07N60C3

SPB07N60C3

SPB07N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
2,338 -

RFQ

SPB07N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB47N10SL-26

IPB47N10SL-26

IPB47N10 - 75V-100V N-CHANNEL AU

Infineon Technologies
2,824 -

RFQ

IPB47N10SL-26

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V 2V @ 2mA 135 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMPB15XP

PMPB15XP

PMPB15XP - 12 V, SINGLE P-CHANNE

Nexperia USA Inc.
3,108 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDMC86520L

FDMC86520L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,066 -

RFQ

FDMC86520L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 13.5A (Ta), 22A (Tc) 4.5V, 10V 7.9mOhm @ 13.5A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 4550 pF @ 30 V - 2.3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDBL0210N80

FDBL0210N80

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,007 -

RFQ

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 10V 2mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10 pF @ 40 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IPI600N25N3G

IPI600N25N3G

IPI600N25 - 12V-300V N-CHANNEL P

Infineon Technologies
2,838 -

RFQ

IPI600N25N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQD4P40TM

FQD4P40TM

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,167 -

RFQ

FQD4P40TM

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 400 V 2.7A (Tc) 10V 3.1Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 680 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC090N03MSG

BSC090N03MSG

BSC090N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,322 -

RFQ

BSC090N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDD4141

FDD4141

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
3,107 -

RFQ

FDD4141

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 40 V 10.8A (Ta), 50A (Tc) 4.5V, 10V 12.3mOhm @ 12.7A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 2775 pF @ 20 V - 2.4W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB43XPE,115

PMPB43XPE,115

NOW NEXPERIA PMPB43XPE - 5A, 20V

NXP Semiconductors
2,572 -

RFQ

PMPB43XPE,115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.8V, 4.5V 48mOhm @ 5A, 4.5V 900mV @ 250µA 23.4 nC @ 4.5 V ±12V 1550 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD5690

FDD5690

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,536 -

RFQ

FDD5690

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 6V, 10V 27mOhm @ 9A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1110 pF @ 25 V - 3.2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3107-7P

AUIRFS3107-7P

AUIRFS3107 - 55V-60V N-CHANNEL A

International Rectifier
3,967 -

RFQ

AUIRFS3107-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF16N50

FDPF16N50

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,228 -

RFQ

FDPF16N50

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMZB290UNE,315

PMZB290UNE,315

MOSFET N-CH 20V 1A DFN1006B-3

NXP USA Inc.
2,235 -

RFQ

PMZB290UNE,315

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68 nC @ 4.5 V ±8V 83 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOT7S65L

AOT7S65L

MOSFET N-CH 650V 7A TO220

Alpha & Omega Semiconductor Inc.
401 -

RFQ

AOT7S65L

Ficha técnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 3.5A, 10V 4V @ 250µA 9.2 nC @ 10 V ±30V 434 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK4R1A10PL,S4X

TK4R1A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
3,532 -

RFQ

TK4R1A10PL,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 40A, 10V 2.5V @ 1mA 104 nC @ 10 V ±20V 6320 pF @ 50 V - 54W (Tc) 175°C Through Hole
STP16N60M2

STP16N60M2

MOSFET N-CH 600V 12A TO220

STMicroelectronics
378 -

RFQ

STP16N60M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 700 pF @ 100 V - 110W (Tc) 150°C (TJ) Through Hole
STF12N50DM2

STF12N50DM2

MOSFET N-CH 500V 11A TO220FP

STMicroelectronics
114 -

RFQ

STF12N50DM2

Ficha técnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 350mOhm @ 5.5A, 10V 5V @ 250µA 16 nC @ 10 V ±25V 628 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80R750P7XKSA1

IPP80R750P7XKSA1

MOSFET N-CH 800V 7A TO220-3

Infineon Technologies
584 -

RFQ

IPP80R750P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF624SPBF

IRF624SPBF

MOSFET N-CH 250V 4.4A D2PAK

Vishay Siliconix
194 -

RFQ

IRF624SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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