Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MMFTP84K-AQ

MMFTP84K-AQ

MOSFET, SOT-23, -60V, -0.18A, 0

Diotec Semiconductor
3,115 -

RFQ

Tape & Reel (TR) - Active P-Channel - - 180mA - - - - - - - 250mW -
DI008N09SQ

DI008N09SQ

MOSFET, SO-8, 90V, 8A, 0, 2W

Diotec Semiconductor
3,447 -

RFQ

Tape & Reel (TR) - Active N-Channel - - 8A - - - - - - - 2W - Surface Mount
FDG316P

FDG316P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,686 -

RFQ

FDG316P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4.5V, 10V 190mOhm @ 1.6A, 10V 3V @ 250µA 5 nC @ 10 V ±20V 165 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMV33UPE,215

PMV33UPE,215

PMV33UPE - 20 V, SINGLE P-CHANNE

NXP Semiconductors
2,603 -

RFQ

PMV33UPE,215

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.8V, 4.5V 36mOhm @ 3A, 4.5V 950mV @ 250µA 22.1 nC @ 4.5 V ±8V 1820 pF @ 10 V - 490mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD50N04S4-08

IPD50N04S4-08

IPD50N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
2,958 -

RFQ

IPD50N04S4-08

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDS2572

FDS2572

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,981 -

RFQ

FDS2572

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4.9A (Tc) 10V 47mOhm @ 4.9A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 2870 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFP40N10_F102

RFP40N10_F102

40A, 100V, 0.04OHM, N-CHANNEL PO

Fairchild Semiconductor
2,030 -

RFQ

RFP40N10_F102

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 40mOhm @ 40A, 10V 4V @ 250µA 300 nC @ 20 V ±20V - - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK766R0-60E,118

BUK766R0-60E,118

MOSFET N-CH 60V 75A D2PAK

NXP USA Inc.
3,208 -

RFQ

BUK766R0-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 10 V ±20V 4520 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD24N06LT4G

NTD24N06LT4G

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,949 -

RFQ

NTD24N06LT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta) 5V 45mOhm @ 10A, 5V 2V @ 250µA 32 nC @ 5 V ±15V 1140 pF @ 25 V - 1.36W (Ta), 62.5W (Tj) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y18-55B,115

BUK7Y18-55B,115

NOW NEXPERIA BUK7Y18-55B - 47.4A

NXP USA Inc.
2,122 -

RFQ

BUK7Y18-55B,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 47.4A (Tc) 10V 18mOhm @ 20A, 10V 4V @ 1mA 21.9 nC @ 10 V ±20V 1263 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y65-100EX

BUK7Y65-100EX

TRANSISTOR >30MHZ

NXP USA Inc.
2,762 -

RFQ

BUK7Y65-100EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 65mOhm @ 5A, 10V 4V @ 1mA 17.8 nC @ 10 V ±20V 1023 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDV302P

FDV302P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,445 -

RFQ

FDV302P

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 25 V 120mA (Ta) 2.7V, 4.5V 10Ohm @ 200mA, 4.5V 1.5V @ 250µA 0.31 nC @ 4.5 V -8V 11000 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ463A-T1-A

2SJ463A-T1-A

2SJ463A - P-CHANNEL MOSFET

Renesas Electronics America Inc
2,940 -

RFQ

2SJ463A-T1-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRLH6224TRPBF

IRLH6224TRPBF

MOSFET N-CH 20V 28A/105A 8PQFN

International Rectifier
2,363 -

RFQ

IRLH6224TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 28A (Ta), 105A (Tc) 2.5V, 4.5V 3mOhm @ 20A, 4.5V 1.1V @ 50µA 86 nC @ 10 V ±12V 3710 pF @ 10 V - 3.6W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTK3139PT1H

NTK3139PT1H

POWER FIELD-EFFECT TRANSISTOR

onsemi
2,996 -

RFQ

NTK3139PT1H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRLR7833PBF

IRLR7833PBF

MOSFET N-CH 30V 140A DPAK

International Rectifier
3,891 -

RFQ

IRLR7833PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF13N06L

FQPF13N06L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,468 -

RFQ

FQPF13N06L

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 5V, 10V 110mOhm @ 5A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 24W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC030N03LSG

BSC030N03LSG

BSC030N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,665 -

RFQ

BSC030N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN6R1-25MLD,115

PSMN6R1-25MLD,115

PSMN6R1-25MLD - N-CHANNEL 25V, L

Nexperia USA Inc.
3,924 -

RFQ

PSMN6R1-25MLD,115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF7N65C

FQPF7N65C

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,622 -

RFQ

FQPF7N65C

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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