Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK4066-DL-1EX

2SK4066-DL-1EX

2SK4066 - N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,965 -

RFQ

2SK4066-DL-1EX

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) - 4.7mOhm @ 50A, 10V - 220 nC @ 10 V - 12500 pF @ 20 V - 1.65W (Ta), 90W (Tc) 150°C (TJ) Surface Mount
AUIRFR48Z

AUIRFR48Z

MOSFET N-CH 55V 42A DPAK

International Rectifier
3,287 -

RFQ

AUIRFR48Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105ZTRL

AUIRFR4105ZTRL

AUTOMOTIVE HEXFET N-CHANNEL POWE

International Rectifier
2,541 -

RFQ

AUIRFR4105ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105Z

AUIRFR4105Z

MOSFET N-CH 55V 20A DPAK

International Rectifier
2,842 -

RFQ

AUIRFR4105Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL8409

AUIRFSL8409

MOSFET N-CH 40V 195A TO262

International Rectifier
2,587 -

RFQ

AUIRFSL8409

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPS65R1K4C6

IPS65R1K4C6

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies
2,411 -

RFQ

IPS65R1K4C6

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) - 1.4Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR4620TRL

AUIRFR4620TRL

MOSFET N-CH 200V 24A DPAK

International Rectifier
2,293 -

RFQ

AUIRFR4620TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75645P3

HUF75645P3

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
2,231 -

RFQ

HUF75645P3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS4115TRL

AUIRFS4115TRL

MOSFET N-CH 150V 99A D2PAK

International Rectifier
2,276 -

RFQ

AUIRFS4115TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 99A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF19NF20

STF19NF20

MOSFET N-CH 200V 15A TO220FP

STMicroelectronics
339 -

RFQ

STF19NF20

Ficha técnica

Tube MESH OVERLAY™ Active N-Channel MOSFET (Metal Oxide) 200 V 15A (Tc) 10V 160mOhm @ 7.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 800 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF390N15A

FDPF390N15A

MOSFET N-CH 150V 15A TO220F

onsemi
500 -

RFQ

FDPF390N15A

Ficha técnica

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 15A (Tc) 10V 40mOhm @ 15A, 10V 4V @ 250µA 18.6 nC @ 10 V ±20V 1285 pF @ 75 V - 22W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF19N20C

FQPF19N20C

MOSFET N-CH 200V 19A TO220F

onsemi
808 -

RFQ

FQPF19N20C

Ficha técnica

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19A (Tc) 10V 170mOhm @ 9.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1080 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF3N80C

FQPF3N80C

MOSFET N-CH 800V 3A TO220F

onsemi
790 -

RFQ

FQPF3N80C

Ficha técnica

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 5V @ 250µA 16.5 nC @ 10 V ±30V 705 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP034N03LGXKSA1

IPP034N03LGXKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
135 -

RFQ

IPP034N03LGXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK750A60F,S4X

TK750A60F,S4X

MOSFET N-CH 600V 10A TO220SIS

Toshiba Semiconductor and Storage
150 -

RFQ

TK750A60F,S4X

Ficha técnica

Tube U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 750mOhm @ 5A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 1130 pF @ 300 V - 40W (Tc) 150°C Through Hole
TP2540N3-G

TP2540N3-G

MOSFET P-CH 400V 86MA TO92-3

Microchip Technology
375 -

RFQ

TP2540N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 400 V 86mA (Tj) 4.5V, 10V 25Ohm @ 100mA, 10V 2.4V @ 1mA - ±20V 125 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
TPS1100D

TPS1100D

MOSFET P-CH 15V 1.6A 8SOIC

Texas Instruments
403 -

RFQ

TPS1100D

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 15 V 1.6A (Ta) 2.7V, 10V 180mOhm @ 1.5A, 10V 1.5V @ 250µA 5.45 nC @ 10 V +2V, -15V - - 791mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
STP60NF06FP

STP60NF06FP

MOSFET N-CH 60V 30A TO220FP

STMicroelectronics
940 -

RFQ

STP60NF06FP

Ficha técnica

Tube STripFET™ II Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 16mOhm @ 30A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1810 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF100B202

IRF100B202

MOSFET N-CH 100V 97A TO220AB

Infineon Technologies
366 -

RFQ

IRF100B202

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 8.6mOhm @ 58A, 10V 4V @ 150µA 116 nC @ 10 V ±20V 4476 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK380A65Y,S4X

TK380A65Y,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
200 -

RFQ

TK380A65Y,S4X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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