Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP038AN06A0

FDP038AN06A0

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
3,603 -

RFQ

FDP038AN06A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMV50XPR

PMV50XPR

PMV50XP - 20V, P-CHANNEL TRENCH

Nexperia USA Inc.
2,222 -

RFQ

PMV50XPR

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 1.5V, 4.5V 60mOhm @ 3.6A, 4.5V 900mV @ 250µA 12 nC @ 4.5 V ±12V 744 pF @ 20 V - 490mW (Ta), 4.63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB43XPEAX

PMPB43XPEAX

PMPB43XPEA - 20 V, P-CHANNEL TRE

Nexperia USA Inc.
2,298 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.8V, 4.5V 48mOhm @ 5A, 4.5V 1V @ 250µA 23.4 nC @ 4.5 V ±12V 1550 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP11N60F

FCP11N60F

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,826 -

RFQ

FCP11N60F

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1490 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDT456P

NDT456P

P-CHANNEL ENHANCEMENT MODE FIELD

onsemi
3,235 -

RFQ

NDT456P

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 4.5V, 10V 30mOhm @ 7.5A, 10V 3V @ 250µA 67 nC @ 10 V ±20V 1440 pF @ 15 V - 3W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NVD3055L104T4G-VF01

NVD3055L104T4G-VF01

NVD3055L104 - NFET DPAK 60V SPCL

onsemi
3,695 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDMC7660DC

FDMC7660DC

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,774 -

RFQ

FDMC7660DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 40A (Tc) 4.5V, 10V 2.2mOhm @ 22A, 10V 2.5V @ 250µA 76 nC @ 10 V ±20V 5170 pF @ 15 V - 3W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP039N08B-F102

FDP039N08B-F102

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,782 -

RFQ

FDP039N08B-F102

Ficha técnica

Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 9450 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS8876-F40

FDS8876-F40

30V N-CHANNEL POWERTRENCH MOSFET

onsemi
3,589 -

RFQ

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 8.2mOhm @ 12.5A, 10V 2.5V @ 250µA 36 nC @ 10 V ±20V 1650 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STB9NK50ZT4

STB9NK50ZT4

MOSFET N-CH 500V 7.2A D2PAK

STMicroelectronics
1,000 -

RFQ

STB9NK50ZT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 7.2A (Tc) 10V 850mOhm @ 3.6A, 10V 4.5V @ 100µA 32 nC @ 10 V ±30V 910 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK30A06N1,S4X

TK30A06N1,S4X

MOSFET N-CH 60V 30A TO220SIS

Toshiba Semiconductor and Storage
277 -

RFQ

TK30A06N1,S4X

Ficha técnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 15mOhm @ 15A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1050 pF @ 30 V - 25W (Tc) 150°C (TJ) Through Hole
IRLZ14STRLPBF

IRLZ14STRLPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
938 -

RFQ

IRLZ14STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOT4N60

AOT4N60

MOSFET N-CH 600V 4A TO220

Alpha & Omega Semiconductor Inc.
103 -

RFQ

AOT4N60

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.2Ohm @ 2A, 10V 4.5V @ 250µA 18 nC @ 10 V ±30V 615 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK9609-40B,118

BUK9609-40B,118

MOSFET N-CH 40V 75A D2PAK

Nexperia USA Inc.
831 -

RFQ

BUK9609-40B,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 5V, 10V 7mOhm @ 25A, 10V 2V @ 1mA 32 nC @ 5 V ±15V 3600 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RCX081N20

RCX081N20

MOSFET N-CH 200V 8A TO220FM

Rohm Semiconductor
203 -

RFQ

RCX081N20

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) 10V 770mOhm @ 4A, 10V 5.25V @ 1mA 8.5 nC @ 10 V ±30V 330 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
IPAN70R900P7SXKSA1

IPAN70R900P7SXKSA1

MOSFET N-CH 700V 6A TO220

Infineon Technologies
290 -

RFQ

IPAN70R900P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 10 V ±16V 211 pF @ 400 V - 17.9W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R600P7SXKSA1

IPA60R600P7SXKSA1

MOSFET N-CH 600V 6A TO220

Infineon Technologies
409 -

RFQ

IPA60R600P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) Through Hole
TK1R4F04PB,LXGQ

TK1R4F04PB,LXGQ

MOSFET N-CH 40V 160A TO220SM

Toshiba Semiconductor and Storage
1,000 -

RFQ

TK1R4F04PB,LXGQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1.9mOhm @ 80A, 6V 3V @ 500µA 103 nC @ 10 V ±20V 5500 pF @ 10 V - 205W (Tc) 175°C Surface Mount
IPAN50R500CEXKSA1

IPAN50R500CEXKSA1

MOSFET N-CH 500V 11.1A TO220

Infineon Technologies
474 -

RFQ

IPAN50R500CEXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.1A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA50R500CEXKSA2

IPA50R500CEXKSA2

MOSFET N-CH 500V 5.4A TO220

Infineon Technologies
185 -

RFQ

IPA50R500CEXKSA2

Ficha técnica

Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 5.4A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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