Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB4615PBF

IRFB4615PBF

IRFB4615 - 12V-300V N-CHANNEL PO

International Rectifier
3,218 -

RFQ

IRFB4615PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4510PBF

IRFB4510PBF

IRFB4510 - 12V-300V N-CHANNEL PO

International Rectifier
3,024 -

RFQ

IRFB4510PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 62A (Tc) 10V 13.5mOhm @ 37A, 10V 4V @ 100µA 87 nC @ 10 V ±20V 3180 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB2532

FDB2532

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
3,468 -

RFQ

FDB2532

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Ta), 79A (Tc) 6V, 10V 16mOhm @ 33A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 5870 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFF333

IRFF333

3A, 350V, 1.5OHM, N-CHANNEL POWE

International Rectifier
2,266 -

RFQ

IRFF333

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDD6685

FDD6685

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,926 -

RFQ

FDD6685

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 40A (Tc) 4.5V, 10V 20mOhm @ 11A, 10V 3V @ 250µA 24 nC @ 5 V ±25V 1715 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRFP4368PBF

IRFP4368PBF

IRFP4368 - 12V-300V N-CHANNEL PO

International Rectifier
3,833 -

RFQ

IRFP4368PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 1.85mOhm @ 195A, 10V 4V @ 250µA 570 nC @ 10 V ±20V 19230 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDG328P

FDG328P

MOSFET P-CH 20V 1.5A SC88

Fairchild Semiconductor
2,385 -

RFQ

FDG328P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 145mOhm @ 1.5A, 4.5V 1.5V @ 250µA 6 nC @ 4.5 V ±12V 337 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK753R1-40E,127

BUK753R1-40E,127

NOW NEXPERIA BUK753R1-40E - 100A

Nexperia USA Inc.
2,428 -

RFQ

BUK753R1-40E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 79 nC @ 10 V ±20V 6200 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK769R6-80E,118

BUK769R6-80E,118

MOSFET N-CH 80V 75A D2PAK

NXP USA Inc.
2,983 -

RFQ

BUK769R6-80E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 9.6mOhm @ 20A, 10V 4V @ 1mA 59.8 nC @ 10 V ±20V 4682 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50R800CE

IPD50R800CE

IPD50R800 - 500V COOLMOS N-CHANN

Infineon Technologies
3,630 -

RFQ

IPD50R800CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK762R6-60E,118

BUK762R6-60E,118

MOSFET N-CH 60V 120A D2PAK

NXP USA Inc.
3,204 -

RFQ

BUK762R6-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10170 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3910TRPBF

IRFR3910TRPBF

IRFR3910 - 12V-300V N-CHANNEL PO

International Rectifier
3,128 -

RFQ

IRFR3910TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA710PZ

FDMA710PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,028 -

RFQ

FDMA710PZ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 7.8A (Ta) 1.8V, 5V 24mOhm @ 7.8A, 5V 1.5V @ 250µA 42 nC @ 5 V ±8V 2015 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS5690

FDS5690

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,755 -

RFQ

FDS5690

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 6V, 10V 28mOhm @ 7A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1107 pF @ 30 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD90N06S4L-05

IPD90N06S4L-05

IPD90N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,691 -

RFQ

IPD90N06S4L-05

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 4.6mOhm @ 90A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCD3400N80Z

FCD3400N80Z

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,191 -

RFQ

FCD3400N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCD620N60ZF

FCD620N60ZF

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,882 -

RFQ

FCD620N60ZF

Ficha técnica

Bulk HiPerFET™, Polar™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 620mOhm @ 3.6A, 10V 5V @ 250µA 36 nC @ 10 V ±20V 1135 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6682

FDS6682

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,835 -

RFQ

FDS6682

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2310 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS7682

FDMS7682

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,531 -

RFQ

FDMS7682

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 22A (Tc) 4.5V, 10V 6.3mOhm @ 14A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 1885 pF @ 15 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDN338P

FDN338P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,149 -

RFQ

FDN338P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.6A (Ta) 2.5V, 4.5V 115mOhm @ 1.6A, 4.5V 1.5V @ 250µA 6.2 nC @ 4.5 V ±8V 451 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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