Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UMW 40N06

UMW 40N06

TO-252 MOSFETS ROHS

UTD Semiconductor
2,405 -

RFQ

UMW 40N06

Ficha técnica

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 18mOhm @ 30A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2928 pF @ 25 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK969R3-100E,118

BUK969R3-100E,118

MOSFET N-CH 100V 100A D2PAK

NXP USA Inc.
2,962 -

RFQ

BUK969R3-100E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 5V, 10V 8.9mOhm @ 25A, 10V 2.1V @ 1mA 94.3 nC @ 5 V ±10V 11650 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G45P40T

G45P40T

MOSFET, P-CH, 40V,45A,TO-220

Goford Semiconductor
3,595 -

RFQ

Tube * Active - - - - - - - - - - - - - -
G300P06T

G300P06T

MOSFET, P-CH, 60V,40A,TO-220

Goford Semiconductor
3,088 -

RFQ

Tube * Active - - - - - - - - - - - - - -
UMW 50N06

UMW 50N06

TO-252 MOSFETS ROHS

UTD Semiconductor
2,655 -

RFQ

UMW 50N06

Ficha técnica

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 17mOhm @ 30A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2928 pF @ 25 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UMW 15N10

UMW 15N10

100V 15A 50W 80MR@10V,10A 2.5V@2

UTD Semiconductor
2,011 -

RFQ

UMW 15N10

Ficha técnica

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 110mOhm @ 10A, 10V 3V @ 250µA 19.2 nC @ 10 V ±20V 632 pF @ 50 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7207Q

AUIRF7207Q

MOSFET P-CH 20V 5.4A 8SO

International Rectifier
2,091 -

RFQ

AUIRF7207Q

Ficha técnica

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 1.6V @ 250µA 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR3806

AUIRFR3806

MOSFET N-CH 60V 43A DPAK

International Rectifier
2,421 -

RFQ

AUIRFR3806

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8409TRL

AUIRFS8409TRL

MOSFET N-CH 40V 195A D2PAK

International Rectifier
3,832 -

RFQ

AUIRFS8409TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH150N65F-F155

FCH150N65F-F155

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,899 -

RFQ

FCH150N65F-F155

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 2.4mA 94 nC @ 10 V ±20V 3737 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR024NTRL

AUIRFR024NTRL

MOSFET N-CH 55V 17A TO252AA

International Rectifier
3,998 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) - 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V - 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF380N60E

FCPF380N60E

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,293 -

RFQ

FCPF380N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF650N80Z

FCPF650N80Z

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,472 -

RFQ

FCPF650N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 650mOhm @ 4A, 10V 4.5V @ 800µA 35 nC @ 10 V ±20V 1565 pF @ 100 V - 30.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC016N03MSG

BSC016N03MSG

BSC016N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,479 -

RFQ

BSC016N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSZ12DN20NS3G

BSZ12DN20NS3G

BSZ12DN20 - 12V-300V N-CHANNEL P

Infineon Technologies
3,981 -

RFQ

BSZ12DN20NS3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDN357N

FDN357N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,465 -

RFQ

FDN357N

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 4.5V, 10V 60mOhm @ 2.2A, 10V 2V @ 250µA 5.9 nC @ 5 V ±20V 235 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7000

2N7000

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,384 -

RFQ

2N7000

Ficha técnica

Bulk STripFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Tc) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 250µA 2 nC @ 5 V ±18V 43 pF @ 25 V - 350mW (Ta) 150°C (TJ) Through Hole
2N7002PS115

2N7002PS115

NOW NEXPERIA 2N7002PS - SMALL SI

Nexperia USA Inc.
2,525 -

RFQ

2N7002PS115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD50N06S2-14

IPD50N06S2-14

IPD50N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,473 -

RFQ

IPD50N06S2-14

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 10V 14.4mOhm @ 32A, 10V 4V @ 80µA 52 nC @ 10 V ±20V 1485 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y9R9-80EX

BUK7Y9R9-80EX

TRANSISTOR >30MHZ

NXP USA Inc.
3,789 -

RFQ

BUK7Y9R9-80EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 89A (Tc) 10V 98mOhm @ 5A, 10V 4V @ 1mA 51.6 nC @ 10 V ±20V 498 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário