Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK969R0-60E,118

BUK969R0-60E,118

NOW NEXPERIA BUK969R0-60E - 75A

NXP USA Inc.
3,671 -

RFQ

BUK969R0-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 5V 8mOhm @ 20A, 10V 2.1V @ 1mA 29.8 nC @ 5 V ±10V 4350 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ)
IPP048N04NG

IPP048N04NG

IPP048N04 - 12V-300V N-CHANNEL P

Infineon Technologies
2,205 -

RFQ

IPP048N04NG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HRF3205F102

HRF3205F102

N-CHANNEL POWER MOSFET, 100A, 55

Fairchild Semiconductor
2,011 -

RFQ

HRF3205F102

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD90N04S3-04

IPD90N04S3-04

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,442 -

RFQ

IPD90N04S3-04

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.6mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0911LSATMA1

BSZ0911LSATMA1

MOSFET N-CH 30V 12A/40A TSDSON

Infineon Technologies
3,178 -

RFQ

BSZ0911LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 40A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 670 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
BSC016N03LSG

BSC016N03LSG

BSC016N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,562 -

RFQ

BSC016N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB054N06N3G

IPB054N06N3G

IPB054N06 - 12V-300V N-CHANNEL P

Infineon Technologies
2,277 -

RFQ

IPB054N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQP9N50C

FQP9N50C

MOSFET N-CH 500V 9A TO220-3

Fairchild Semiconductor
2,699 -

RFQ

FQP9N50C

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 800mOhm @ 4.5A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1030 pF @ 25 V - 135W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL1404ZSPBF

IRL1404ZSPBF

MOSFET N-CH 40V 75A D2PAK

International Rectifier
2,666 -

RFQ

IRL1404ZSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB33N15DPBF

IRFB33N15DPBF

MOSFET N-CH 150V 33A TO220AB

International Rectifier
3,230 -

RFQ

IRFB33N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4510PBF

IRFU4510PBF

MOSFET N-CH 100V 56A IPAK

International Rectifier
2,153 -

RFQ

IRFU4510PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 13.9mOhm @ 38A, 10V 4V @ 100µA 81 nC @ 10 V ±20V 3031 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR2905

AUIRLR2905

AUIRLR2905 - 55V-60V N-CHANNEL A

Infineon Technologies
3,075 -

RFQ

AUIRLR2905

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK762R0-40C,118

BUK762R0-40C,118

NEXPERIA BUK762 - N-CHANNEL MOSF

NXP Semiconductors
2,915 -

RFQ

BUK762R0-40C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2mOhm @ 25A, 10V 4V @ 1mA 175 nC @ 10 V ±20V 11323 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UMW 30N06

UMW 30N06

60V 25A 30MR@10V,15A 34.7W 2.5V@

UTD Semiconductor
3,349 -

RFQ

UMW 30N06

Ficha técnica

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 29mOhm @ 15A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1562 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC86520L

FDMC86520L

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,630 -

RFQ

FDMC86520L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 13.5A (Ta), 22A (Tc) 4.5V, 10V 7.9mOhm @ 13.5A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 4550 pF @ 30 V - 2.3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C646NLT1G

NVMFS5C646NLT1G

SINGLE N-CHANNEL POWER MOSFET 60

onsemi
3,644 -

RFQ

NVMFS5C646NLT1G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 93A (Tc) 4.5V, 10V 4.7mOhm @ 50A, 10V 2V @ 250µA 33.7 nC @ 10 V ±20V 2164 pF @ 25 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC8882

FDMC8882

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,331 -

RFQ

FDMC8882

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 10.5A (Ta), 16A (Tc) 4.5V, 10V 14.3mOhm @ 10.5A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 945 pF @ 15 V - 2.3W (Ta), 18W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDC637AN-NB5E023A

FDC637AN-NB5E023A

N-CHANNEL POWERTRENCH MOSFET, 2.

onsemi
2,723 -

RFQ

FDC637AN-NB5E023A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF7607TRPBFTR

IRF7607TRPBFTR

IRF7607 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,621 -

RFQ

IRF7607TRPBFTR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL307SPH6327XTSA1

BSL307SPH6327XTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
2,937 -

RFQ

BSL307SPH6327XTSA1

Ficha técnica

Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V 2V @ 40µA 29 nC @ 10 V ±20V 805 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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