Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN013-100PS,127

PSMN013-100PS,127

NEXPERIA PSMN013-100PS - 67A, 10

Nexperia USA Inc.
3,007 -

RFQ

PSMN013-100PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 68A (Tc) 10V 13.9mOhm @ 15A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 3195 pF @ 50 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDC654P

FDC654P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,285 -

RFQ

FDC654P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 75mOhm @ 3.6A, 10V 3V @ 250µA 9 nC @ 10 V ±20V 298 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN3R5-40YSDX

PSMN3R5-40YSDX

PSMN3R5-40YSD - N-CHANNEL 40V, 1

Nexperia USA Inc.
2,405 -

RFQ

PSMN3R5-40YSDX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Ta) 10V 3.5mOhm @ 25A, 10V 3.6V @ 1mA 19 nC @ 10 V ±20V 3245 pF @ 20 V Schottky Diode (Body) 115W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK9875-100A/CUX

BUK9875-100A/CUX

NEXPERIA BUK9875 - N-CHANNEL MOS

Nexperia USA Inc.
3,169 -

RFQ

BUK9875-100A/CUX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Tc) 4.5V, 10V 72mOhm @ 8A, 10V 2V @ 1mA - ±10V 1690 pF @ 25 V - 8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK6211-75C,118

BUK6211-75C,118

NEXPERIA BUK6211-75C - 74A, 75V

NXP Semiconductors
2,947 -

RFQ

BUK6211-75C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 74A (Ta) - 11mOhm @ 25A, 10V 2.8V @ 1mA 81 nC @ 10 V ±16V 5251 pF @ 25 V - 158W (Ta) -55°C ~ 175°C (TJ)
FDS8449

FDS8449

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,423 -

RFQ

FDS8449

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 7.6A (Ta) 4.5V, 10V 29mOhm @ 7.6A, 10V 3V @ 250µA 11 nC @ 5 V ±20V 760 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DI045N03PT

DI045N03PT

MOSFET, 30V, 45A, 16W

Diotec Semiconductor
2,274 -

RFQ

DI045N03PT

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 4.4mOhm @ 24A, 10V 2.5V @ 250µA 53 nC @ 10 V ±20V 2300 pF @ 15 V - 16W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G75P04K

G75P04K

P40V,RD(MAX)<10M@-10V,VTH-1.2V~-

Goford Semiconductor
3,103 -

RFQ

G75P04K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 10mOhm @ 10A, 20V 2.5V @ 250µA 106 nC @ 10 V ±20V 5380 pF @ 20 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R1K5CEATMA1

IPD60R1K5CEATMA1

MOSFET N-CH 600V 3.1A TO252-3

Infineon Technologies
2,744 -

RFQ

IPD60R1K5CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Surface Mount
MMFTP3401-AQ

MMFTP3401-AQ

MOSFET 30V 4A P 1.4W

Diotec Semiconductor
2,691 -

RFQ

MMFTP3401-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 2.5V, 10V 65mOhm @ 4A, 10V 1.3V @ 250µA - ±12V 954 pF @ 0 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MMFTP3334K-AQ

MMFTP3334K-AQ

MOSFET, 30V, 4A, P, 1W

Diotec Semiconductor
2,145 -

RFQ

MMFTP3334K-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Tj) 4V, 10V 71mOhm @ 3A, 10V 2V @ 100µA 5.9 nC @ 10 V ±20V 280 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH8324TR2PBF

IRFH8324TR2PBF

MOSFET N-CH 30V 23A/90A PQFN

Infineon Technologies
3,332 -

RFQ

IRFH8324TR2PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 90A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V 2.35V @ 50µA 31 nC @ 10 V ±20V 2380 pF @ 10 V - 3.6W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS86252

FDS86252

FDS86252 - N-CHANNEL POWER TRENC

onsemi
2,651 -

RFQ

FDS86252

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4.5A (Ta) 6V, 10V 55mOhm @ 4.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 955 pF @ 75 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB02N60S5ATMA1

SPB02N60S5ATMA1

MOSFET N-CH 600V 1.8A TO263-3

Infineon Technologies
3,509 -

RFQ

SPB02N60S5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMA7672

FDMA7672

MOSFET N-CH 30V 9A 6MICROFET

Fairchild Semiconductor
2,821 -

RFQ

FDMA7672

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 21mOhm @ 9A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 760 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP24N08

FQP24N08

MOSFET N-CH 80V 24A TO220-3

Fairchild Semiconductor
2,153 -

RFQ

FQP24N08

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Tc) 10V 60mOhm @ 12A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 750 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
GT105N10K

GT105N10K

MOSFET, N-CH, 100V,60A,TO-252

Goford Semiconductor
2,302 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IPD80R1K4P7

IPD80R1K4P7

800V, 1.4OHM, N-CHANNEL MOSFET

Infineon Technologies
3,050 -

RFQ

IPD80R1K4P7

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
IPS80R1K4P7

IPS80R1K4P7

IPS80R1K4 - 800V COOLMOS N-CHANN

Infineon Technologies
2,346 -

RFQ

IPS80R1K4P7

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
DI010N03PW

DI010N03PW

MOSFET, 30V, 10A, N, 1.4W

Diotec Semiconductor
2,577 -

RFQ

DI010N03PW

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2V @ 250µA 25 nC @ 10 V ±20V 1120 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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