Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA60R120C7XKSA1

IPA60R120C7XKSA1

IPA60R120 - 11A, 600V, 0.12OHM

Infineon Technologies
2,018 -

RFQ

IPA60R120C7XKSA1

Ficha técnica

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ)
AUIRFR8401TRL

AUIRFR8401TRL

AUIRFR8401 - 20V-40V N-CHANNEL A

Infineon Technologies
3,782 -

RFQ

AUIRFR8401TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCB20N60TM

FCB20N60TM

FCB20N60 - N-CHANNEL, SUPERFET

onsemi
2,857 -

RFQ

FCB20N60TM

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ)
IPW90R1K2C3FKSA1

IPW90R1K2C3FKSA1

IPW90R1 - 900V COOLMOS N-CHANNEL

Infineon Technologies
2,939 -

RFQ

IPW90R1K2C3FKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD2572

FDD2572

POWER FIELD-EFFECT TRANSISTOR, 4

onsemi
2,122 -

RFQ

FDD2572

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1770 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P03P4L04ATMA1

IPB80P03P4L04ATMA1

MOSFET_(20V,40V)

Infineon Technologies
3,794 -

RFQ

IPB80P03P4L04ATMA1

Ficha técnica

Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQD30N06TM

FQD30N06TM

POWER MOSFET, N-CHANNEL, QFET, 6

onsemi
2,606 -

RFQ

FQD30N06TM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 22.7A (Tc) 10V 45mOhm @ 11.4A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 945 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMV42ENE215

PMV42ENE215

PMV42 - N-CHANNEL MOSFET

NXP Semiconductors
3,649 -

RFQ

PMV42ENE215

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN9R1-30YL,115

PSMN9R1-30YL,115

NEXPERIA PSMN9R1-30YL - 57A, 30V

Nexperia USA Inc.
2,424 -

RFQ

PSMN9R1-30YL,115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN8R0-40PS,127

PSMN8R0-40PS,127

NEXPERIA PSMN8R0-40PS - 77A, 40V

NXP Semiconductors
3,172 -

RFQ

PSMN8R0-40PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 77A (Tc) 10V 7.6mOhm @ 25A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 1262 pF @ 12 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMV48XPAR

PMV48XPAR

PMV48XPA - 20 V, P-CHANNEL TRENC

Nexperia USA Inc.
2,590 -

RFQ

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 55mOhm @ 2.4A, 4.5V 1.25V @ 250µA 11 nC @ 4.5 V ±12V 1000 pF @ 10 V - 510mW (Ta), 4.15W (Tc) 150°C (TJ) Surface Mount
PMV32UP,215

PMV32UP,215

PMV32UP - 20 V, 4 A P-CHANNEL TR

Nexperia USA Inc.
3,435 -

RFQ

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.8V, 4.5V 36mOhm @ 2.4A, 4.5V 950mV @ 250µA 15.5 nC @ 4.5 V ±8V 1890 pF @ 10 V - 510mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB070AN06A0-F085

FDB070AN06A0-F085

N-CHANNEL POWERTRENCH MOSFET 60V

onsemi
3,404 -

RFQ

FDB070AN06A0-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta) 10V 7mOhm @ 80A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 3000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP70N10S3L12AKSA1

IPP70N10S3L12AKSA1

MOSFET_(75V,120V(

Infineon Technologies
2,715 -

RFQ

IPP70N10S3L12AKSA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V 2.4V @ 83µA 80 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMFS5C645NLT1G

NTMFS5C645NLT1G

SINGLE N-CHANNEL POWER MOSFET 60

onsemi
3,363 -

RFQ

NTMFS5C645NLT1G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 2200 pF @ 50 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS5360L-F085

FDMS5360L-F085

FDMS5360 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor
2,669 -

RFQ

FDMS5360L-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 8.5mOhm @ 60A, 10V 3V @ 250µA 72 nC @ 10 V ±20V 3695 pF @ 30 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDUL03N150CG

NDUL03N150CG

N-CHANNEL POWER MOSFET, 1500V, 2

onsemi
3,255 -

RFQ

NDUL03N150CG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1500 V 2.5A (Ta) 10V 10.5Ohm @ 1.25A, 10V - 34 nC @ 10 V ±30V 650 pF @ 30 V - 3W (Ta), 50W (Tc) 150°C (TJ) Through Hole
NVB110N65S3F

NVB110N65S3F

SINGLE N-CHANNEL POWER MOSFET SU

onsemi
2,269 -

RFQ

NVB110N65S3F

Ficha técnica

Bulk FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 3mA 58 nC @ 10 V ±30V 2560 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0310AS

FDMS0310AS

N-CHANNEL POWERTRENCH SYNCFET 30

Fairchild Semiconductor
3,578 -

RFQ

FDMS0310AS

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 22A (Tc) 4.5V, 10V 4.3mOhm @ 19A, 10V 3V @ 1mA 37 nC @ 10 V ±20V 2280 pF @ 15 V - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK6215-75C,118

BUK6215-75C,118

NEXPERIA BUK6215-75C - 57A, 75V

NXP Semiconductors
3,298 -

RFQ

BUK6215-75C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 57A (Ta) - 15mOhm @ 15A, 10V 2.8V @ 1mA 61.8 nC @ 10 V ±16V 3900 pF @ 25 V - 128W (Ta) -55°C ~ 175°C (TJ)
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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