Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM340N06CH X0G

TSM340N06CH X0G

MOSFET N-CHANNEL 60V 30A TO251

Taiwan Semiconductor Corporation
965 -

RFQ

TSM340N06CH X0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1180 pF @ 30 V - 66W (Tc) 150°C (TJ) Through Hole
IRL3705ZPBF

IRL3705ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
719 -

RFQ

IRL3705ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34PBF-BE3

IRLZ34PBF-BE3

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix
290 -

RFQ

IRLZ34PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) - 50mOhm @ 18A, 5V 2V @ 250µA 35 nC @ 5 V ±10V 1600 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
DMNH6008SCTQ

DMNH6008SCTQ

MOSFET N-CH 60V 130A TO220AB

Diodes Incorporated
329 -

RFQ

DMNH6008SCTQ

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 10V 8mOhm @ 20A, 10V 4V @ 250µA 21 nC @ 10 V 20V 2596 pF @ 30 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
LP0701N3-G

LP0701N3-G

MOSFET P-CH 16.5V 500MA TO92

Microchip Technology
207 -

RFQ

LP0701N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 16.5 V 500mA (Tj) 2V, 5V 1.5Ohm @ 300mA, 5V 1V @ 1mA - ±10V 250 pF @ 15 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF20NF20

STF20NF20

MOSFET N-CH 200V 18A TO220FP

STMicroelectronics
700 -

RFQ

STF20NF20

Ficha técnica

Tube STripFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 125mOhm @ 10A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 940 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
BS270

BS270

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,764 -

RFQ

BS270

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 625mW (Ta) -55°C ~ 150°C (TJ) Through Hole
G2K3N10H

G2K3N10H

MOSFET, N-CH,100V, 2A,SOT-223

Goford Semiconductor
3,787 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
G48N03D3

G48N03D3

N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4

Goford Semiconductor
3,645 -

RFQ

G48N03D3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 48A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2.4V @ 250µA 38 nC @ 10 V ±20V 1784 pF @ 15 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UMW SI2302A

UMW SI2302A

20V 2.8A 1.25W [email protected],3.1A 1

UTD Semiconductor
2,864 -

RFQ

UMW SI2302A

Ficha técnica

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 45mOhm @ 3.6A, 4.5V 1.9V @ 250µA 10 nC @ 4.5 V ±8V 300 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
G07P04S

G07P04S

P40V,RD(MAX)<18M@-10V,RD(MAX)<22

Goford Semiconductor
3,383 -

RFQ

G07P04S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 7A (Tc) 4.5V, 10V 18mOhm @ 7A, 10V 2.5V @ 250µA 24 nC @ 10 V ±20V 1750 pF @ 20 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN48XPAX

PMN48XPAX

NEXPERIA PMN48XP - 20V, P-CHANNE

NXP Semiconductors
2,326 -

RFQ

PMN48XPAX

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 2.5V, 4.5V 55mOhm @ 2.4A, 4.5V 1.25V @ 250µA 13 nC @ 4.5 V ±12V 1000 pF @ 10 V - 530mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G26P04D5

G26P04D5

P40V,RD(MAX)<18M@-10V,RD(MAX)<22

Goford Semiconductor
9,591 -

RFQ

G26P04D5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 2479 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G33N03D52

G33N03D52

N30V, 33A,RD<13M@10V,VTH1V~3V, D

Goford Semiconductor
5,000 -

RFQ

G33N03D52

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 4.5V, 10V 13mOhm @ 16A, 10V 3V @ 250µA 17.5 nC @ 10 V ±20V 782 pF @ 15 V - 29W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UMW SI2301A

UMW SI2301A

20V 2.8A 400MW [email protected],2A 1V@

UTD Semiconductor
3,479 -

RFQ

UMW SI2301A

Ficha técnica

Tape & Reel (TR) UMW Active P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 2.5V, 4.5V 85mOhm @ 2.8A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±12V 405 pF @ 10 V - 400mW (Ta) 150°C (TJ) Surface Mount
UMW AO3400A

UMW AO3400A

30V 5.8A 35MR@10V,5.8A 1.4W 1.4V

UTD Semiconductor
2,417 -

RFQ

UMW AO3400A

Ficha técnica

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 2.5V, 10V 27mOhm @ 5.8A, 10V 1.4V @ 250µA 12 nC @ 4.5 V ±12V 1050 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
UMW BSS84

UMW BSS84

50V 130MA 300MW 10R@5V,100MA 2V@

UTD Semiconductor
3,649 -

RFQ

UMW BSS84

Ficha técnica

Tape & Reel (TR) UMW Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V 10Ohm @ 100mA, 5V 2V @ 1mA - ±20V 45 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFW634BTMFP001

IRFW634BTMFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,992 -

RFQ

IRFW634BTMFP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Ta) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UMW AO3401A

UMW AO3401A

30V 4.1A 65MR@10V,4.2A 350MW 1.3

UTD Semiconductor
2,013 -

RFQ

UMW AO3401A

Ficha técnica

Tape & Reel (TR) UMW Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 2.5V, 10V 50mOhm @ 4.2A, 10V 1.3V @ 250µA 9.4 nC @ 4.5 V ±12V 954 pF @ 15 V - 1.4W (Ta) 150°C (TJ) Surface Mount
IPD135N03LG

IPD135N03LG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,092 -

RFQ

IPD135N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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