Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF730ASPBF

IRF730ASPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
1,000 -

RFQ

IRF730ASPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP55NF06L

STP55NF06L

MOSFET N-CH 60V 55A TO220AB

STMicroelectronics
130 -

RFQ

STP55NF06L

Ficha técnica

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V, 5V 18mOhm @ 27.5A, 10V 1.7V @ 250µA 37 nC @ 4.5 V ±16V 1700 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP042N03LGXKSA1

IPP042N03LGXKSA1

MOSFET N-CH 30V 70A TO220-3

Infineon Technologies
141 -

RFQ

IPP042N03LGXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP19NF20

STP19NF20

MOSFET N-CH 200V 15A TO220AB

STMicroelectronics
1,476 -

RFQ

STP19NF20

Ficha técnica

Tube MESH OVERLAY™ Active N-Channel MOSFET (Metal Oxide) 200 V 15A (Tc) 10V 160mOhm @ 7.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 800 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP50N06

FQP50N06

MOSFET N-CH 60V 50A TO220-3

onsemi
4,449 -

RFQ

FQP50N06

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 25A, 10V 4V @ 250µA 41 nC @ 10 V ±25V 1540 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9610PBF

IRF9610PBF

MOSFET P-CH 200V 1.8A TO220AB

Vishay Siliconix
3,950 -

RFQ

IRF9610PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLB8743PBF

IRLB8743PBF

MOSFET N-CH 30V 78A TO220AB

Infineon Technologies
643 -

RFQ

IRLB8743PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.2mOhm @ 40A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 5110 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
DN2535N5-G

DN2535N5-G

MOSFET N-CH 350V 500MA TO220-3

Microchip Technology
426 -

RFQ

DN2535N5-G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 350 V 500mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18511KCS

CSD18511KCS

MOSFET N-CH 40V 194A TO220-3

Texas Instruments
404 -

RFQ

CSD18511KCS

Ficha técnica

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 194A (Ta) 4.5V, 10V 2.6mOhm @ 100A, 10V 2.4V @ 250µA 64 nC @ 10 V ±20V 5940 pF @ 20 V - 188W (Ta) -55°C ~ 175°C (TJ) Through Hole
PSMN8R0-40PS,127

PSMN8R0-40PS,127

MOSFET N-CH 40V 77A TO220AB

Nexperia USA Inc.
175 -

RFQ

PSMN8R0-40PS,127

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 77A (Tc) 10V 7.6mOhm @ 25A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 1262 pF @ 12 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ24PBF

IRLZ24PBF

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix
751 -

RFQ

IRLZ24PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA70R360P7SXKSA1

IPA70R360P7SXKSA1

MOSFET N-CH 700V 12.5A TO220

Infineon Technologies
181 -

RFQ

IPA70R360P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 26.4W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFBC30PBF

IRFBC30PBF

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix
192 -

RFQ

IRFBC30PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLD120PBF

IRLD120PBF

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix
3,906 -

RFQ

IRLD120PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 4V, 5V 270mOhm @ 780mA, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
FQP50N06L

FQP50N06L

MOSFET N-CH 60V 52.4A TO220-3

onsemi
515 -

RFQ

FQP50N06L

Ficha técnica

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 52.4A (Tc) 5V, 10V 21mOhm @ 26.2A, 10V 2.5V @ 250µA 32 nC @ 5 V ±20V 1630 pF @ 25 V - 121W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP060N06NAKSA1

IPP060N06NAKSA1

MOSFET N-CH 60V 17A/45A TO220-3

Infineon Technologies
198 -

RFQ

IPP060N06NAKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 45A (Tc) 6V, 10V 6mOhm @ 45A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9530PBF-BE3

IRF9530PBF-BE3

MOSFET P-CH 100V 12A TO220AB

Vishay Siliconix
513 -

RFQ

IRF9530PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) - 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD19503KCS

CSD19503KCS

MOSFET N-CH 80V 100A TO220-3

Texas Instruments
190 -

RFQ

CSD19503KCS

Ficha técnica

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Ta) 6V, 10V 9.2mOhm @ 60A, 10V 3.4V @ 250µA 36 nC @ 10 V ±20V 2730 pF @ 40 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34PBF

IRF9Z34PBF

MOSFET P-CH 60V 18A TO220AB

Vishay Siliconix
2,489 -

RFQ

IRF9Z34PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
VP3203N3-G

VP3203N3-G

MOSFET P-CH 30V 650MA TO92-3

Microchip Technology
101 -

RFQ

VP3203N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 30 V 650mA (Tj) 4.5V, 10V 600mOhm @ 3A, 10V 3.5V @ 10mA - ±20V 300 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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