Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CSD17556Q5BT

CSD17556Q5BT

MOSFET N-CH 30V 100A 8VSON

Texas Instruments
292 -

RFQ

CSD17556Q5BT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Ta) 4.5V, 10V 1.4mOhm @ 40A, 10V 1.65V @ 250µA 39 nC @ 4.5 V ±20V 7020 pF @ 15 V - 3.1W (Ta), 191W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740PBF-BE3

IRF740PBF-BE3

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
911 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 5.3A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK10A60W5,S5VX

TK10A60W5,S5VX

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage
2,656 -

RFQ

TK10A60W5,S5VX

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 450mOhm @ 4.9A, 10V 4.5V @ 500µA 25 nC @ 10 V ±30V 720 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
FDPF39N20

FDPF39N20

MOSFET N-CH 200V 39A TO220F

onsemi
100 -

RFQ

FDPF39N20

Ficha técnica

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 39A (Tc) 10V 66mOhm @ 19.5A, 10V 5V @ 250µA 49 nC @ 10 V ±30V 2130 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP110N8F6

STP110N8F6

MOSFET N-CH 80V 110A TO220

STMicroelectronics
189 -

RFQ

STP110N8F6

Ficha técnica

Tube STripFET™ F6 Active N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 10V 6.5mOhm @ 55A, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 9130 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD18502Q5BT

CSD18502Q5BT

MOSFET N-CH 40V 100A 8VSON

Texas Instruments
905 -

RFQ

CSD18502Q5BT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 4.5V, 10V 2.3mOhm @ 30A, 10V 2.2V @ 250µA 33 nC @ 4.5 V ±20V 5070 pF @ 20 V - 3.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP9NK50ZFP

STP9NK50ZFP

MOSFET N-CH 500V 7.2A TO220FP

STMicroelectronics
2,271 -

RFQ

STP9NK50ZFP

Ficha técnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 7.2A (Tc) 10V 850mOhm @ 3.6A, 10V 4.5V @ 100µA 32 nC @ 10 V ±30V 910 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF4N90K5

STF4N90K5

MOSFET N-CH 900V 4A TO220FP

STMicroelectronics
783 -

RFQ

STF4N90K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 2.1Ohm @ 1A, 10V 5V @ 100µA 5.3 nC @ 10 V ±30V 173 pF @ 100 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ44VZPBF

IRFZ44VZPBF

MOSFET N-CH 60V 57A TO220AB

Infineon Technologies
900 -

RFQ

IRFZ44VZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP180N4F6

STP180N4F6

MOSFET N-CHANNEL 40V 120A TO220

STMicroelectronics
764 -

RFQ

Tube STripFET™ F6 Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V - - - - - - 190W (Tc) - Through Hole
STP2N105K5

STP2N105K5

MOSFET N-CH 1050V 1.5A TO220

STMicroelectronics
623 -

RFQ

STP2N105K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 1050 V 1.5A (Tc) 10V 8Ohm @ 750mA, 10V 5V @ 100µA 10 nC @ 10 V ±30V 115 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN1206L-G

VN1206L-G

MOSFET N-CH 120V 230MA TO92-3

Microchip Technology
3,031 -

RFQ

VN1206L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 120 V 230mA (Tj) 2.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±30V 125 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1010ZPBF

IRF1010ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
143 -

RFQ

IRF1010ZPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP037N06L3GXKSA1

IPP037N06L3GXKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies
500 -

RFQ

IPP037N06L3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V 2.2V @ 93µA 79 nC @ 4.5 V ±20V 13000 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI9530GPBF

IRFI9530GPBF

MOSFET P-CH 100V 7.7A TO220-3

Vishay Siliconix
3,127 -

RFQ

IRFI9530GPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 300mOhm @ 4.6A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB5615PBF

IRFB5615PBF

MOSFET N-CH 150V 35A TO220AB

Infineon Technologies
580 -

RFQ

IRFB5615PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAW60R180P7SXKSA1

IPAW60R180P7SXKSA1

MOSFET N-CHANNEL 650V 18A TO220

Infineon Technologies
553 -

RFQ

IPAW60R180P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18510KCS

CSD18510KCS

MOSFET N-CH 40V 200A TO220-3

Texas Instruments
400 -

RFQ

CSD18510KCS

Ficha técnica

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 4.5V, 10V 1.7mOhm @ 100A, 10V 2.3V @ 250µA 75 nC @ 4.5 V ±20V 11400 pF @ 20 V - 250W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRF540SPBF

IRF540SPBF

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
360 -

RFQ

IRF540SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP13N50C

FQP13N50C

MOSFET N-CH 500V 13A TO220-3

onsemi
210 -

RFQ

FQP13N50C

Ficha técnica

Tube QFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 6.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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